| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 120 | |
| 100 | |
| 5 | |
| 1.3@15mA@150mA | |
| 0.7@15mA@150mA | |
| 1 | |
| 100 | |
| 40@150mA@10V|10@1A@10V | |
| 1000 | |
| -55 | |
| 200 | |
| Bulk | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 mm |
| Verpackungsbreite | 2.28 mm |
| Verpackungslänge | 4.57 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Implement this NPN ZTX453 GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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