| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 20 | |
| 20 | |
| 5 | |
| 1.1@200mA@2.5A | |
| 0.04@10mA@0.1A|0.2@20mA@1A|0.22@50mA@1.5A|0.26@200mA@2.5A | |
| 2.5 | |
| 300@10mA@2V|300@100mA@2V|150@2A@2V|35@4A@2V|15@6A@2V | |
| 1000 | |
| -55 | |
| 200 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 |
| Verpackungsbreite | 2.28 |
| Verpackungslänge | 4.57 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
If your circuit's specifications require a device that can handle high levels of voltage, Diodes Zetex's PNP ZTX718 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
| EDA / CAD Models |
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