| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 180 | |
| 140 | |
| 6 | |
| 1.05@300mA@3A | |
| 0.06@5mA@100mA|0.1@50mA@500mA|0.12@100mA@1A|0.33@300mA@3A | |
| 3 | |
| 100@10mA@5V|100@1A@5V|75@3A@5V | |
| 1200 | |
| -55 | |
| 200 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 |
| Verpackungsbreite | 2.28 |
| Verpackungslänge | 4.57 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Implement this PNP ZTX955 GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
| EDA / CAD Models |
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