| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 0.32 | |
| 4000@10V | |
| 75(Max)@25V | |
| 700 | |
| 13(Max) | |
| 8(Max) | |
| 13(Max) | |
| 7(Max) | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 mm |
| Verpackungsbreite | 2.28 mm |
| Verpackungslänge | 4.57 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Create an effective common drain amplifier using this ZVN2110A power MOSFET from Diodes Zetex. Its maximum power dissipation is 700 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes dmos technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
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