| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 0.6 | |
| 100 | |
| 10 | |
| 1000@10V | |
| 100(Max)@25V | |
| 700 | |
| 15(Max) | |
| 12(Max) | |
| 12(Max) | |
| 8(Max) | |
| -55 | |
| 150 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 mm |
| Verpackungsbreite | 2.28 mm |
| Verpackungslänge | 4.57 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Amplify electronic signals and switch between them with the help of Diodes Zetex's ZVN4206ASTZ power MOSFET. Its maximum power dissipation is 700 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes dmos technology.
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.

