Diodes IncorporatedZVNL120GTAMOSFETs
Trans MOSFET N-CH 200V 0.32A 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Trench | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 1.5 | |
| -55 to 150 | |
| 0.32 | |
| 100 | |
| 10 | |
| 10000@5V | |
| 85(Max)@25V | |
| 7(Max)@25V | |
| 0.5 | |
| 20(Max) | |
| 2000 | |
| 12(Max) | |
| 8(Max) | |
| 20(Max) | |
| 8(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 14000@5V|12000@6V|11500@7V|11000@8V|10500@9V|10000@10V|10000@20V | |
| 20 | |
| 2 | |
| 2 | |
| 3 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the ZVNL120GTA power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.