| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 0.7(Min) | |
| 5.4 | |
| 40@4.5V | |
| 16(Max)@4.5V | |
| 1100@15V | |
| 1800 | |
| 11.6 | |
| 9.6 | |
| 28.3 | |
| 5.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95(Max) mm |
| Verpackungsbreite | 3.1(Max) mm |
| Verpackungslänge | 3.1(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | MSOP |
| 8 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this ZXM64N02XTA power MOSFET from Diodes Zetex. Its maximum power dissipation is 1800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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