10-25% Rabatt
Diodes IncorporatedZXMN2F30FHTAMOSFETs
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 4.1 | |
| 45@4.5V | |
| 4.8@10V | |
| 4.8 | |
| 452@10V | |
| 1400 | |
| 10.2 | |
| 5.6 | |
| 19.4 | |
| 2.9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) mm |
| Verpackungsbreite | 1.4(Max) mm |
| Verpackungslänge | 3.04(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this ZXMN2F30FHTA power MOSFET from Diodes Zetex. Its maximum power dissipation is 1400 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology.
| EDA / CAD Models |
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