| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 30 | |
| ±20 | |
| 4.2 | |
| 45@10V | |
| 17.2@5V|29.6@10V | |
| 29.6 | |
| 1022@15V | |
| 2100 | |
| 21.4 | |
| 6.5 | |
| 37.1 | |
| 3.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.45 |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SO |
| 8 | |
| Leitungsform | Gull-wing |
This ZXMP3A16DN8TA power MOSFET from Diodes Zetex can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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