| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 60 | |
| ±20 | |
| 1(Min) | |
| 2.7 | |
| 100 | |
| 0.5 | |
| 125@10V | |
| 9@4.5V|17.7@10V | |
| 17.7 | |
| 637@30V | |
| 2150 | |
| 11.3 | |
| 3.4 | |
| 26.2 | |
| 2.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.45 |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SO |
| 8 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this ZXMP6A17DN8TA power MOSFET from Diodes Zetex. Its maximum power dissipation is 2150 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.