Diodes IncorporatedZXT10P12DE6TAGP BJT
Trans GP BJT PNP 12V 3A 1700mW 6-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Quad Collector | |
| 1 | |
| 12 | |
| 12 | |
| 5 | |
| 0.95@50mA@3A | |
| 0.017@10mA@0.1A|0.14@10mA@1A|0.15@50mA@1.5A|0.3@50mA@3A | |
| 3 | |
| 300@10mA@2V|300@100mA@2V|180@2.5A@2V|60@8A@2V|45@10A@2V | |
| 1700 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.3(Max) mm |
| Verpackungsbreite | 1.8(Max) mm |
| Verpackungslänge | 3.1(Max) mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 6 | |
| Leitungsform | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the PNP ZXT10P12DE6TA BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1700 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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