Diodes IncorporatedZXT11N20DFTAGP BJT
Trans GP BJT NPN 20V 2.5A 806mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| ZXT11N20DFTA | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 20 | |
| 7.5 | |
| 1@250mA@2.5A | |
| 0.012@10mA@0.1A|0.1@10mA@1A|0.06@100mA@1A|0.13@250mA@2.5A | |
| 2.5 | |
| 200@10mA@2V|300@100mA@2V|250@1A@2V|150@3A@2V|100@5A@2V | |
| 806 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) mm |
| Verpackungsbreite | 1.4(Max) mm |
| Verpackungslänge | 3.04(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN ZXT11N20DFTA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 806 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7.5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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