Diodes IncorporatedZXTN2007ZTAGP BJT
Trans GP BJT NPN 30V 6A 2100mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 30 | |
| 7 | |
| 1.1@300mA@6.5A | |
| 0.035@20mA@0.5A|0.045@100mA@1A|0.06@20mA@1A|0.115@20mA@2A|0.19@300mA@6.5A | |
| 6 | |
| 100@10mA@1V|100@1A@1V|100@7A@1V|20@20A@1V | |
| 2100 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 mm |
| Verpackungsbreite | 2.5 mm |
| Verpackungslänge | 4.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ZXTN2007ZTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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