Diodes IncorporatedZXTP07012EFFTAGP BJT
Trans GP BJT PNP 12V 4A 2000mW 3-Pin SOT-23F T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 12 | |
| 12 | |
| 7 | |
| 1.05@80mA@4A | |
| 0.1@2.5mA@0.5A|0.075@100mA@1A|0.165@5mA@1A|0.35@10mA@2A|0.34@80mA@4A | |
| 4 | |
| 500@10mA@2V|400@1A@2V|230@4A@2V|150@6A@2V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.89 |
| Verpackungsbreite | 1.65 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23F |
| 3 |
The PNP ZXTP07012EFFTA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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