Diodes IncorporatedZXTP2009ZTAGP BJT
Trans GP BJT PNP 40V 5.5A 3000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 50 | |
| 40 | |
| 7.5 | |
| 0.9@40mA@2A|1.075@550mA@5.5A | |
| 0.03@10mA@0.1A|0.06@100mA@1A|0.07@50mA@1A|0.165@10mA@1A|0.08@200mA@2A|0.175@40mA@2A|0.175@175mA@3.5A|0.185@550mA@5.5A | |
| 5.5 | |
| 200@10mA@2V|200@500mA@2V|170@2A@2V|110@5.5A@2V | |
| 3000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 mm |
| Verpackungsbreite | 2.5 mm |
| Verpackungslänge | 4.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP ZXTP2009ZTA general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7.5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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