Diodes IncorporatedZXTP2025FTAGP BJT
Trans GP BJT PNP 50V 5A 1560mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 50 | |
| 50 | |
| 7 | |
| -55 to 150 | |
| 1.2 | |
| 0.88@40mA@2A|1.05@500mA@5A | |
| 0.02@10mA@100mA|0.06@100mA@1A|0.23@100mA@2A|0.2@500mA@5A | |
| 5 | |
| 20 | |
| 180@10mA@2V|200@500mA@2V|70@5A@2V|12@10A@2V | |
| 1560 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.98 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Implement this versatile PNP ZXTP2025FTA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1560 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
UAV-Bedrohungen wirksam abwehren
So entsteht ein integriertes Counter-UAV-Abwehrsystem mit Intelligent Processing, Sensorik und Rapid Response.