Diodes IncorporatedZXTP25140BFHTAGP BJT
Trans GP BJT PNP 140V 1A 1810mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 180 | |
| 140 | |
| 7 | |
| 0.95@100mA@1A | |
| 0.05@10mA@0.1A|0.135@2mA@0.1A|0.11@50mA@0.5A|0.23@25mA@0.5A|0.26@100mA@1A | |
| 1 | |
| 100@10mA@2V|100@0.1A@2V|20@1A@2V | |
| 1810 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3.04(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Implement this PNP ZXTP25140BFHTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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