Diodes IncorporatedZXTP720MATAGP BJT
Trans GP BJT PNP 40V 3.3A 2450mW 3-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 50 | |
| 40 | |
| 7 | |
| 1.05@250mA@2.5A | |
| 0.04@10mA@0.1A|0.22@50mA@1A|0.3@100mA@1.5A|0.3@200mA@2A|0.37@250mA@2.5A | |
| 3.3 | |
| 300@10mA@2V|300@100mA@2V|180@1A@2V|60@1.5A@2V|12@3A@2V | |
| 2450 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.58 mm |
| Verpackungsbreite | 2 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 3 | |
| Leitungsform | No Lead |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP ZXTP720MATA general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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