GeneSiC Semiconductor Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Bridge Type | Material | Diode Type | Channel Type | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Peak Average Forward Current - (A) | Maximum Continuous Forward Current - (A) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Maximum Holding Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Peak On-State Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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G3F75MT12J-TR
Trans MOSFET N-CH SiC 1.2KV 31A 8-Pin(7+Tab) TO-263 Automotive AEC-Q101
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GeneSiC Semiconductor | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 18 | 140000 | 31 | 100@18V | 48@18V | 988@800V | 8 | TO-263 | Yes | AEC-Q101 | Yes | Unknown | |||||||||||||||||||||||||||||||||||
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G3F135MT12J-TR
Trans MOSFET N-CH SiC 1.2KV 18A 8-Pin(7+Tab) TO-263 Automotive AEC-Q101
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GeneSiC Semiconductor | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 18 | 87000 | 18 | 180@18V | 27@18V | 575@800V | 8 | TO-263 | Yes | AEC-Q101 | Yes | Unknown | |||||||||||||||||||||||||||||||||||
FST16080
Diode Schottky 80V 160A 3-Pin(3+Tab) TO-249AB
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GeneSiC Semiconductor | Gleichrichter | Schottky Diode | Dual Common Cathode | 80 | 160 | 1200 | 0.88 | 1000 | 3 | TO-249AB | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||
GE04MPS06A
Diode Schottky 650V 10A 2-Pin(2+Tab) TO-220
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GeneSiC Semiconductor | Gleichrichter | 650 | 2 | TO-220 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||
1N3294A
Diode Switching 800V 100A 2-Pin DO-8
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GeneSiC Semiconductor | Gleichrichter | Switching Diode | Single | 800 | 100 | 2300 | 1.5 | 13000 | 2 | DO-8 | DO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||
GC2X50MPS06-227
Silicon Carbide Schottky Diode
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GeneSiC Semiconductor | Gleichrichter | 650 | 1.8@50A | 4 | SOT-227 | SOT | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||
GD25MPS17H
Diode Schottky 1.7KV 56A 2-Pin(2+Tab) TO-247
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Von 5,2992 € bis 5,5141 €
pro Stück
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GeneSiC Semiconductor | Gleichrichter | 1700 | 2 | TO-247 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||
MUR20020CT
Diode Switching 200V 200A 3-Pin Twin Tower
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GeneSiC Semiconductor | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 200 | 2000 | 1@100A | 25 | 75 | 3 | Twin Tower | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||
BR1010
Rectifier Bridge Diode Single 1KV 10A 4-Pin Case BR-10
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GeneSiC Semiconductor | Brückengleichrichter | Single Phase | Single | 1000 | 10 | 700 | 200 | 1.05@5A | 10 | 4 | Case BR-10 | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||
| G3F60MT06D Trans MOSFET SiC 650V 3-Pin(3+Tab) TO-247 |
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GeneSiC Semiconductor | MOSFETs | SiC | 650 | 55 | 3 | TO-247 | |||||||||||||||||||||||||||||||||||||||||||||||||
G3R20MT17K
Trans MOSFET N-CH SiC 1.7KV 95A 4-Pin(4+Tab) TO-247
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GeneSiC Semiconductor | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 1700 | 15 | 569000 | 95 | 28@15V | 256@15V | 7620@1000V | 4 | TO-247 | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||
GD20MPS12H
Diode Schottky 1.2KV 39A 2-Pin(2+Tab) TO-247
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GeneSiC Semiconductor | Gleichrichter | 2 | TO-247 | Unknown | Unknown | Unknown | |||||||||||||||||||||||||||||||||||||||||||||||||
| G3F25MT12K Trans MOSFET SiC 1.2KV 4-Pin(4+Tab) TO-247 |
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GeneSiC Semiconductor | MOSFETs | SiC | 1200 | 25 | 4 | TO-247 | |||||||||||||||||||||||||||||||||||||||||||||||||
MBRT600150
Diode Schottky 150V 600A 3-Pin Three Tower
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GeneSiC Semiconductor | Gleichrichter | Schottky Diode | Dual Common Cathode | 150 | 3 | Three Tower | TO | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||
GAP3SLT33-220FP
Diode Schottky 3.3KV 0.3A 2-Pin(2+Tab) TO-220FP
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GeneSiC Semiconductor | Gleichrichter | Schottky Diode | Single | 3300 | 0.3 | 2 | 2.2 | 10 | 89000 | 2 | TO-220FP | TO | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||
G3R30MT12J-TR
Trans MOSFET N-CH SiC 1.2KV 85A 8-Pin(7+Tab) TO-263
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GeneSiC Semiconductor | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 18 | 408000 | 85 | 34@18V | 118@15V | 3863@800V | 8 | TO-263 | Unknown | Unknown | Unknown | ||||||||||||||||||||||||||||||||||||
| G3F20MT12K Trans MOSFET SiC 1.2KV 4-Pin(4+Tab) TO-247 |
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GeneSiC Semiconductor | MOSFETs | SiC | 1200 | 20 | 4 | TO-247 | |||||||||||||||||||||||||||||||||||||||||||||||||
GB25MPS17-247
Diode Schottky SiC 1.7KV 110A 2-Pin(2+Tab) TO-247
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GeneSiC Semiconductor | Gleichrichter | Schottky Diode | SiC | Single | 1700 | 110 | 270 | 1.8@25A | 10 | 473000 | 1596(Typ) | 2 | TO-247 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||
GD30MPS06J-TR
650V 30A Sic Schottky MPS Diode
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GeneSiC Semiconductor | Gleichrichter | 8 | TO-263 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
G3F25MT06K
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Automotive AEC-Q101
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GeneSiC Semiconductor | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 18 | 294000 | 100 | 27.5@18V | 108@18V | 2939@400V | 4 | TO-247 | Yes | AEC-Q101 | Yes | Unknown | |||||||||||||||||||||||||||||||||||
MUR5020
Diode Switching 200V 50A 2-Pin DO-5
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GeneSiC Semiconductor | Gleichrichter | Switching Diode | Single | 200 | 50 | 600 | 1 | 10@50V | 75 | 2 | DO-5 | DO | No | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||
| G3F18MT12K Trans MOSFET SiC 1.2KV 4-Pin(4+Tab) TO-247 |
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GeneSiC Semiconductor | MOSFETs | SiC | 1200 | 18.5 | 4 | TO-247 | |||||||||||||||||||||||||||||||||||||||||||||||||
MBR60045CTL
Low Vf Silicon Power Schottky Diode
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GeneSiC Semiconductor | Gleichrichter | Schottky Diode | Dual Common Cathode | 3 | Twin Tower | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
MBRH240100
Diode Schottky 100V 240A 2-Pin Case D-67
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GeneSiC Semiconductor | Gleichrichter | Schottky Diode | Single | 100 | 240 | 3300 | 0.84 | 1000 | 2 | Case D-67 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||
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MBR20045CT
Diode Schottky 45V 200A 3-Pin Twin Tower
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GeneSiC Semiconductor | Gleichrichter | Schottky Diode | Dual Common Cathode | 45 | 200 | 1500 | 0.65@100A | 1000 | 3 | Twin Tower | TO | No | No | No | No | EAR99 | Yes | No |