Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BSZ099N06LS5ATMA1
Trans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
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Bestand
10.000
Von 0,2351 € bis 0,2405 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | 20 | 2.3 | 11 | 9.9@10V | 6.9@4.5V | 60 | 3.5 | 2100 | 210 | 1000@30V | 8.3@10V|11.3@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQD063N15NM5ATMA1
N-channel Power MOSFET
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Bestand
205
Von 2,0326 € bis 2,1363 €
pro Stück
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Infineon Technologies AG | MOSFETs | 8 | TSON EP | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRLR120NTRL
Trans MOSFET N-CH Si 100V 10A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
2.990
Von 1,0366 € bis 2,0127 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±16 | 2 | 10 | 185@10V | 20(Max)@5V | 48000 | 440@25V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSO615CGXUMA1
Trans MOSFET N/P-CH 60V 3.1A/2A 8-Pin DSO T/R
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Bestand
765
1,4081 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | N|P | Dual Dual Drain | Enhancement | 2 | 60 | ±20 | 2 | 3.1@N Channel|2@P Channel | 110@10V@N Channel|300@10V@P Channel | 15@10V@N Channel|13.5@10V@P Channel | 62.5 | 2000 | 90 | 300@25V@N Channel|365@25V@P Channel | 8 | DSO | SO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDW10G65C5XKSA1
Diode Schottky SiC 650V 10A 3-Pin(3+Tab) TO-247 Tube
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Bestand
8
Von 1,4916 € bis 0,3479 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 650 | 10 | 58 | 1.7 | 400 | 300(Typ) | 65000 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPB20N60C3ATMA1
Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) D2PAK T/R
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Bestand
19.001
0,4826 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 3.9 | 20.7 | 190@10V | 87@10V | 0.6 | 87 | 208000 | 2400@25V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDD60R180CM8XTMA1
Trans MOSFET N-CH 600V 21A 10-Pin HDSOP EP T/R
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Bestand
1.700
Von 0,7488 € bis 1,3998 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Drain Quad Source | Enhancement | 1 | 600 | 20 | 21 | 180@10V | 17@10V | 169000 | 743@400V | 10 | HDSOP EP | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPL65R230C7AUMA1
Trans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R
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Bestand
7.425
2,6002 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 650 | 20 | 4 | 10 | 230@10V | 20@10V | 62 | 20 | 67000 | 996@400V | 204@10V | Tape and Reel | 4 | VSON EP | SON | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLB3034PBF
Trans MOSFET N-CH Si 40V 343A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
1.487
Von 1,2439 € bis 2,4015 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 343 | 1.7@10V | 108@4.5V | 0.4 | 375000 | 10315@25V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ44VPBF
Trans MOSFET N-CH Si 60V 55A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
5.802
0,3423 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 55 | 16.5@10V | 67(Max)@10V | 67(Max) | 115000 | 1812@25V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FZ400R12KE4HOSA1
Trans IGBT Module N-CH 1200V 400A 2400W 4-Pin 62MM-2 Tray
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Bestand
6
80,0173 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Single Dual Emitter | ±20 | 1200 | 400 | 2400 | Tray | 4 | 62MM-2 | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD435N34KHPSA1
Rectifier Diode
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Bestand
2
342,9437 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Dual Series | 3400 | Tray | 3 | PB60-1 | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDD60R125G7XTMA1
Trans MOSFET N-CH 600V 20A 10-Pin HDSOP EP T/R
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Bestand
3
0,3798 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Drain Quad Source | Enhancement | 1 | 600 | 20 | 4 | 20 | 125@10V | 27@10V | 62 | 27 | 120000 | 1080@400V | 108@10V | Tape and Reel | 10 | HDSOP EP | SO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB65R065C7ATMA2
Trans MOSFET N-CH 650V 33A 3-Pin(2+Tab) D2PAK T/R
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Bestand
1.000
3,1824 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 4 | 33 | 65@10V | 64@10V | 62 | 64 | 171000 | 3020@400V | 58@10V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQD020N10NM5CGSCATMA1
Trans MOSFET N-CH 100V 26A 9-Pin WHTFN EP T/R
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Bestand
70
Von 2,0914 € bis 2,4049 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Quad Source | Enhancement | 1 | 100 | 20 | 26 | 2.05@10V | 107@10V | 107 | 3000 | 7300@50V | 9 | WHTFN EP | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPU50R950CE
Trans MOSFET N-CH 500V 4.3A 3-Pin(3+Tab) TO-251 Tube
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Bestand
45
0,6626 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | 20 | 3.5 | 4.3 | 950@13V | 10.5@10V | 62 | 3.7 | 10.5 | 34000 | 231@100V | Tube | 3 | TO-251 | TO | No | Unknown | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW50N65SS5XKSA1
IGBT Discrete Chip
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Bestand
240
8,146 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | 3 | TO-247 | TO | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F1225R12KT4GBOSA1
Trans IGBT Module N-CH 1200V 25A 160W 38-Pin ECONO3-4 Tray
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Bestand
10
83,6109 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Array 12 | ±20 | 1200 | 25 | 160 | Tray | 38 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP92PH6327XTSA1
Trans MOSFET P-CH 250V 0.26A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
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Bestand
5.000
Von 0,145 € bis 0,1856 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | P | Single Dual Drain | Enhancement | 1 | 250 | ±20 | 2 | 0.26 | 12000@10V | 4.3@10V | 115 | 25 | 4.3 | 1800 | 13 | 83@25V | 10000@2.8V|8200@4.5V|7500@10V | Tape and Reel | 4 | SOT-223 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3710STRLPBF
Trans MOSFET N-CH Si 100V 57A 3-Pin(2+Tab) D2PAK T/R
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Bestand
4.800
Von 0,6387 € bis 0,6803 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 57 | 23@10V | 130(Max)@10V | 40 | 0.75 | 130(Max) | 200000 | 410 | 3130@25V | HEXFET | Tape and Reel | 3 | D2PAK | TO | No | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB020N10N5LFATMA1
Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R
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Bestand
2.018
Von 2,2814 € bis 3,4934 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | 20 | 4.1 | 176 | 2@10V | 195@10V | 62 | 0.4 | 195 | 313000 | 650@50V | 1.8@10V | Tape and Reel | Unknown | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLMS6802TRPBF
Trans MOSFET P-CH Si 20V 5.6A 6-Pin Micro T/R
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Bestand
32.875
Von 0,1158 € bis 0,4939 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±12 | 5.6 | 50@4.5V | 11@5V | 62.5 | 2000 | 1079@10V | Tape and Reel | 6 | Micro | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ040N06LS5ATMA1
Trans MOSFET N-CH 60V 17A 8-Pin TSDSON EP T/R
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Bestand
10.007
0,466 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | 20 | 2.3 | 17 | 4@10V | 18@4.5V | 62 | 2100 | 2400@30V | 3.3@10V|4.4@4.5V | 8 | TSDSON EP | SON | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4468PBF
Trans MOSFET N-CH Si 100V 195A 3-Pin(3+Tab) TO-247AC Tube
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Bestand
1.695
Von 1,9605 € bis 4,8338 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 195 | 2.6@10V | 363@10V | 40 | 0.29 | 363 | 517000 | 1300 | 22000@50V | 2.3@10V | Tube | 3 | TO-247AC | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQE013N04LM6CGATMA1
Keeping the system in mind, Infineon sets new standards in power MOSFET performance
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Bestand
762
Von 0,8942 € bis 0,9171 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 2 | 31 | 1.35@10V | 20@4.5V|41@10V | 41 | 2500 | 2900@20V | Tape and Reel | 9 | TTFN EP | No | No | No | No | EAR99 | Yes | Yes |