Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Material | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Diode Type | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Mode of Operation | Typical Input Resistance - (kOhm) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Typical Carrier Life Time - (us) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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FF900R12IE4BOSA1
Trans IGBT Module N-CH 1200V 900A 5100W 10-Pin PRIME2-1 Tray
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Bestand
3
395,6896 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1200 | 900 | 5100 | Tray | 10 | PRIME2-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA120R026M2HXKSA1
Trans MOSFET N-CH SiC 1.2KV 69A Automotive Tube
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Bestand
231
Von 6,427 € bis 9,0055 €
pro Stück
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Infineon Technologies AG | MOSFETs | SiC | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 289000 | 1200 | 69 | 23 | 34@18V | 60@18V | 1990@800V | Tube | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGB110S101XTMA1
Trans MOSFET N-CH GaN 100V 9A 4-Pin VSON EP T/R
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Bestand
4.884
Von 0,5827 € bis 0,8168 €
pro Stück
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Infineon Technologies AG | MOSFETs | GaN | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 2500 | 100 | 9 | 5.5 | 11@5V | 3.4@5V | 300@50V | 4 | VSON EP | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP65R099CFD7AAKSA1
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
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Bestand
500
Von 2,62 € bis 4,7857 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 127000 | 650 | 24 | 20 | 4.5 | 99@10V | 53@10V | 53 | 2513@400V | Tube | 3 | TO-220 | TO | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGC025S08S1XTMA1
Trans MOSFET N-CH GaN 80V 23A 6-Pin TSON T/R
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Bestand
50
Von 2,0162 € bis 2,6364 €
pro Stück
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Infineon Technologies AG | MOSFETs | GaN | Power MOSFET | N | Single Dual Drain Triple Source | Enhancement | 1 | 3300 | 80 | 23 | 5.5 | 2.5@5V | 12@5V | 1250@40V | 6 | TSON | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDM02G120C5XTMA1
Diode Schottky SiC 1.2KV 14A 3-Pin(2+Tab) DPAK T/R
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Bestand
1.705
Von 0,6106 € bis 1,0801 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 1200 | 14 | 37 | 98000 | 1.65@2A | 18 | 62K/W | 182(Typ) | 1.5K/W | Tape and Reel | 3 | DPAK | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ0994NSATMA1
Trans MOSFET N-CH 30V 13A 8-Pin TSDSON EP T/R
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Bestand
5.000
0,2355 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2100 | 30 | 13 | 20 | 2 | 7@10V | 5.2@4.5V|10@10V | 10 | 670@15V | 5@10V|7@4.5V | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR6306E6327HTSA1
Diode PIN Switch 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R
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Bestand
18.000
0,0839 €
pro Stück
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Infineon Technologies AG | PIN | Switch | SHF | 50 | Dual Common Anode | 100 | 1(Typ)@10mA | 250 | 2@5mA | 0.01 | 1.2 | 0.3@5V | 0.075 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF600R12IP4BOSA1
Trench and Field Stop IGBT Module
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Bestand
3
301,0562 €
pro Stück
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Infineon Technologies AG | IGBT-Module | Dual | Tray | 10 | PRIME2-1 | No | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAW60R180P7SXKSA1
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
380
Von 0,6409 € bis 1,9436 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 26000 | 600 | 18 | 20 | 62 | 4 | 180@10V | 25@10V | 4.85 | 25 | 19 | 1081@400V | 145@10V | Tube | 3 | TO-220FP | TO | Yes | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL1404ZSTRLPBF
Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R
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Bestand
3.494
Von 0,709 € bis 0,7237 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 230000 | 40 | 200 | ±16 | 3.1@10V | 75@5V | 5080@25V | 2.5@10V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB034N06L3GATMA1
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
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Bestand
50.000
0,7099 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 167000 | 60 | 90 | ±20 | 2.2 | 3.4@10V | 59@4.5V | 10000@30V | 2.7@10V|3@10V|3.6@4.5V|3.9@4.5V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW20N120R5XKSA1
Trans IGBT Chip N-CH 1200V 40A 288W 3-Pin(3+Tab) TO-247 Tube
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Bestand
25
Von 1,0476 € bis 0,4764 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop | N | Single | ±20 | 1200 | 40 | 288 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP80R900P7XKSA1
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220 Tube
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Bestand
4.000
0,4387 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 45000 | 800 | 6 | 20 | 62 | 3.5 | 900@10V | 15@10V | 2.8 | 15 | 350@500V | 770@10V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R060C7XKSA1
Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Tube
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Bestand
253
Von 3,3861 € bis 1,4314 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 162000 | 600 | 35 | 20 | 62 | 4 | 60@10V | 68@10V | 68 | 2850@400V | 52@10V | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB033N10N5LFATMA1
Trans MOSFET N-CH 100V 159A 3-Pin(2+Tab) D2PAK T/R
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Bestand
1.009
1,8616 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 179000 | 100 | 159 | 20 | 62 | 4.1 | 3.3@10V | 102@10V | 0.7 | 102 | 1100 | 350@50V | 2.7@10V | Tape and Reel | 3 | D2PAK | TO | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4435DYTRPBF
Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
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Bestand
1.856
Von 0,2618 € bis 0,8159 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | P | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 30 | 8 | ±20 | 50 | 1(Min) | 20@10V | 40@10V | 40 | 2320@15V | Tape and Reel | Unknown | 8 | SOIC | SO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP40R12KE3GBOSA1
Trans IGBT Module N-CH 1200V 55A 210W 35-Pin ECONO3-3 Tray
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Bestand
10
101,2418 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 55 | 210 | Tray | 35 | ECONO3-3 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ040N04LSGATMA1
Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP T/R
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Bestand
1.880
Von 0,6859 € bis 1,1835 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2100 | 40 | 18 | ±20 | 2 | 4@10V | 23@4.5V|48@10V | 48 | 3800@20V | 3.3@10V|4.5@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP322PH6327XTSA1
Trans MOSFET P-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
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Bestand
24.000
Von 0,2505 € bis 0,2739 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | P | Single Dual Drain | Enhancement | 1 | 1800 | 100 | 1 | ±20 | 115 | 1 | 800@10V | 12.4@10V | 12.4 | 70 | 280@25V | 600@10V|808@4.5V | SIPMOS | Tape and Reel | 4 | SOT-223 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI045N10N3GXKSA1
Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube
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Bestand
16
1,4096 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 214000 | 100 | 100 | ±20 | 3.5 | 4.5@10V | 88@10V | 88 | 6320@50V | 3.9@10V|3.6@10V|4.7@6V|4.4@6V | OptiMOS | Tube | 3 | TO-262 | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB4227PBF
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
57.811
Von 1,0228 € bis 1,5152 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 330000 | 200 | 65 | ±30 | 5 | 24@10V | 70@10V | 70 | 4600@25V | 19.7@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPW47N60C3FKSA1
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube
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Bestand
2.833
Von 5,969 € bis 10,3367 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 415000 | 600 | 47 | ±20 | 62 | 3.9 | 70@10V | 252@10V | 0.3 | 252 | 6800@25V | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC817UPNE6327HTSA1
Trans GP BJT NPN/PNP 45V 0.5A 330mW 6-Pin SC-74 T/R Automotive AEC-Q101
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Bestand
2.855
Von 0,0885 € bis 0,4053 €
pro Stück
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Infineon Technologies AG | GP BJT | NPN|PNP | Si | Bipolar Small Signal | Dual | 2 | 45 | 1.2@50mA@500mA | 50 | 330 | 5 | 0.5 | 50 to 120|120 to 200 | 160@100mA@1V|100@300mA@1V | 0.7@50mA@500mA | Tape and Reel | 6 | SC-74 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847SH6327XTSA1
Trans GP BJT NPN 45V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
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Bestand
832
Von 0,0533 € bis 0,1608 €
pro Stück
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Infineon Technologies AG | GP BJT | NPN | Si | Bipolar Small Signal | Dual | 2 | 45 | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | 50 | 250 | 6 | 0.1 | 200 to 300 | 200@2mA@5V | 9 | 0.95 | 0.25@0.5mA@10mA|0.6@5mA@100mA | 10 | Tape and Reel | 6 | SOT-363 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |