Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPU50R950CE
Trans MOSFET N-CH 500V 4.3A 3-Pin(3+Tab) TO-251 Tube
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Bestand
45
0,6626 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | 20 | 3.5 | 4.3 | 950@13V | 10.5@10V | 62 | 3.7 | 10.5 | 34000 | 231@100V | Tube | 3 | TO-251 | TO | No | Unknown | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC035N10NM5LF2ATMA1
Trans MOSFET N-CH 100V 19A 8-Pin TDSON EP T/R
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Bestand
5.000
3,1671 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | 20 | 3.5 | 19 | 3.5@10V | 70@10V | 50 | 20 | 70 | 3000 | 780 | 5500@50V | 4.25@8V|3.4@9V|3@10V|2.8@11V|2.7@12V|2.6@13V|2.5@14V|2.5@15V|2.45@16V | Tape and Reel | 8 | TDSON EP | SON | Yes | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQDH88N06LM5ATMA1
N-channel Power MOSFET
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Bestand
4.925
Von 1,8599 € bis 1,1417 €
pro Stück
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Infineon Technologies AG | MOSFETs | 3000 | 8 | TSON EP | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR193L3E6327XTMA1
Trans RF BJT NPN 12V 0.08A 580mW 3-Pin TSLP T/R
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Bestand
8.824
Von 0,1104 € bis 0,2673 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | Single | 12 | 1 | 20 | 2 | 0.08 | 8V/30mA | 50 to 120 | 70@30mA@8V | 2.25 | 580 | 0.63 | 19 | 8000(Typ) | 1.6(Min) | Tape and Reel | 3 | TSLP | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF4MR20KM1HPHPSA1
Trans MOSFET N-CH SiC 2KV 245A 7-Pin Tray
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Bestand
1
411,4028 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Dual | Enhancement | 2 | 2000 | 20 | 245 | 5.3@18V | 1170@18V | 36100@1200V | 7 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ096N10LS5ATMA1
Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R
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Bestand
2.243
Von 0,4788 € bis 0,7657 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | 20 | 2.3 | 11 | 9.6@10V | 12@4.5V | 62 | 2100 | 1600@50V | 8.2@10V|10.5@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT5402LRHE6327XTSA1
Diode Schottky Si 0.2A 2-Pin TSLP T/R
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Bestand
13.450
Von 0,1494 € bis 0,2151 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Single | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 10 | 5 | 230 | Tape and Reel | 2 | TSLP | No | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ34NSTRLPBF
Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R
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Bestand
30.402
Von 0,4381 € bis 0,8787 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 29 | 40@10V | 34(Max)@10V | 40 | 2.2 | 34(Max) | 3800 | 240 | 700@25V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSD223PH6327XTSA1
Trans MOSFET P-CH 20V 0.39A 6-Pin SOT-363 T/R Automotive AEC-Q101
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Bestand
42.000
Von 0,0423 € bis 0,216 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | P | Dual | Enhancement | 2 | 20 | ±12 | 1.2 | 0.39 | 1200@4.5V | 0.5@4.5V | 250 | 45@15V | Tape and Reel | 6 | SOT-363 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDD09SG60CXTMA2
Diode Schottky 600V 9A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.425
2,2624 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 600 | 9 | 49 | 2.1 | 80 | 280(Typ) | 115000 | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPTC015N10NM5ATMA1
OptiMOS™ 5 power MOSFET in TOLT
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Bestand
172
Von 3,5357 € bis 3,7758 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Octal Drain Seven Source | Enhancement | 1 | 100 | 20 | 35 | 1.5@10V | 166@10V | 166 | 3800 | 12000@50V | OptiMOS 5 | Tape and Reel | 16 | HDSOP EP | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KT4BOSA1
Trans IGBT Module N-CH 1200V 150A 750W 35-Pin ECONO3-4 Tray
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Bestand
8
85,1226 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 150 | 750 | Tray | 35 | ECONO3-4 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLB4030PBF
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
1.141
Von 1,0444 € bis 3,2826 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±16 | 180 | 4.3@10V | 87@4.5V | 0.4 | 370000 | 11360@50V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML2502TRPBF
Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R
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Bestand
296
Von 0,1351 € bis 0,415 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 20 | ±12 | 1.2 | 4.2 | 45@4.5V | 8@5V | 100 | 1250 | 90 | 740@15V | 35@4.5V|50@2.5V | Tape and Reel | Unknown | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH8201TRPBF
Trans MOSFET N-CH 25V 49A 8-Pin PQFN EP T/R
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Bestand
4.000
0,5535 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 25 | ±20 | 2.35 | 49 | 0.95@10V | 56@4.5V|111@10V | 35 | 21 | 111 | 3600 | 1730 | 7330@13V | 0.8@10V|1.2@4.5V | Tape and Reel | 8 | PQFN EP | QFN | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIMBG120R040M1XTMA1
Trans MOSFET N-CH SiC 1.2KV 54A Automotive 8-Pin(7+Tab) TO-263 T/R
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Bestand
290
Von 5,8706 € bis 7,7011 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 23 | 54 | 50@20V | 43@20V | 268000 | 1264@800V | Tape and Reel | 8 | TO-263 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDWD75G120C5XKSA1
Diode Schottky 1.2KV 186A 2-Pin(2+Tab) TO-247 Tube
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Bestand
240
Von 11,515 € bis 14,1324 €
pro Stück
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Infineon Technologies AG | Gleichrichter | 2 | TO-247 | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA70R900P7SXKSA1
Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
500
1,1835 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | 16 | 3.5 | 6 | 900@10V | 6.8@10V | 80 | 6.8 | 20500 | 211@400V | 740@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR133E6327HTSA1
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
93.000
0,0483 €
pro Stück
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Infineon Technologies AG | Digital-BJT | NPN | Single | 50 | 10 | 1 | 0.1 | 30@5mA@5V | 200 | 0.3@0.5mA@10mA | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS4321TRL7PP
Trans MOSFET N-CH 150V 86A 7-Pin(6+Tab) D2PAK T/R
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Bestand
28
Von 1,7786 € bis 2,1881 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 150 | ±30 | 5 | 86 | 14.7@10V | 71@10V | 71 | 350000 | 4460@50V | 11.7@10V | Tape and Reel | 7 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ040N06LS5ATMA1
Trans MOSFET N-CH 60V 17A 8-Pin TSDSON EP T/R
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Bestand
10.007
0,466 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | 20 | 2.3 | 17 | 4@10V | 18@4.5V | 62 | 2100 | 2400@30V | 3.3@10V|4.4@4.5V | 8 | TSDSON EP | SON | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4468PBF
Trans MOSFET N-CH Si 100V 195A 3-Pin(3+Tab) TO-247AC Tube
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Bestand
1.695
Von 1,9605 € bis 4,8338 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 195 | 2.6@10V | 363@10V | 40 | 0.29 | 363 | 517000 | 1300 | 22000@50V | 2.3@10V | Tube | 3 | TO-247AC | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB110P06LMATMA1
Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
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Bestand
2.000
Von 1,3362 € bis 1,376 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 60 | 20 | 100 | 11@10V | 281@10V | 281 | 300000 | 8500@30V | 9@10V|11@4.5V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPTG020N13NM6ATMA1
Trans MOSFET N-CH 135V 29A 9-Pin(8+Tab) HSOG T/R
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Bestand
14
Von 3,5682 € bis 1,8503 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 135 | 20 | 29 | 1.95@15V | 159@10V | 159 | 3800 | 11000@68V | Tape and Reel | 9 | HSOG | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUCN04S7L009ATMA1
Trans MOSFET N-CH 40V 275A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
4.695
Von 0,5624 € bis 0,5655 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±16 | 275 | 0.91@10V | 66@10V | 66 | 129000 | 4388@20V | Tape and Reel | 8 | TDSON EP | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes |