Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TD250N14KOFHPSA1
Thyristor SCR Phase Control Thyristor Module 1.4kV 8kA Tray
|
Bestand
1
98,9818 €
pro Stück
|
Infineon Technologies AG | SCR Modules | 150 | 1000 | 50 | 2 | 200 | 300 | 1.5@800A | 410 | 5 | PB50-1 | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB80N06S4L07ATMA2
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Bestand
1.000
0,6303 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±16 | 2.2 | 80 | 6.7@10V | 58@10V | 62 | 1.9 | 58 | 79000 | 980 | 4370@25V | 7.6@4.5V|7.9@4.5V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS7002VH6327XTSA1
Diode Schottky Si 0.07A 2-Pin SC-79 T/R Automotive AEC-Q101
|
Bestand
6.927
Von 0,0353 € bis 0,0915 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Single | 0.07 | 0.1 | 1@0.015A | 0.1@50V | 2 | 250 | Tape and Reel | 2 | SC-79 | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F3L25R12W1T4B27BOMA1 Easy PACK IGBT module |
Bestand
24
Von 21,8217 € bis 28,5874 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | Tray | 23 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISP16DP10LMAXTSA1
Trans MOSFET P-CH 100V 2.3A Automotive 4-Pin(3+Tab) SOT-223 T/R
|
Bestand
995
Von 0,3644 € bis 0,5329 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Small Signal | P | Single Dual Drain | Enhancement | 1 | 100 | 20 | 2.3 | 167@10V | 21@4.5V|41@10V | 1800 | 1600@50V | 4 | SOT-223 | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUA200N04S5N010AUMA1
Trans MOSFET N-CH 40V 200A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101
|
Bestand
5.516
Von 0,8334 € bis 2,1467 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Source | Enhancement | 1 | 40 | ±20 | 200 | 0.94@10V | 99@10V | 0.9 | 99 | 167000 | 5750@25V | 0.8@10V|0.9@7V | Tape and Reel | 6 | HSOF | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU4615PBF
Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) IPAK Tube
|
Bestand
75
56,5453 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | ±20 | 5 | 33 | 42@10V | 26@10V | 100 | 1.045 | 26 | 144000 | 155 | 1750@50V | 34@10V | Tube | 3 | IPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDD08SG60CXTMA2
Diode Schottky SiC 600V 8A 3-Pin(2+Tab) DPAK T/R
|
Bestand
1.948
Von 1,8079 € bis 3,699 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 600 | 8 | 42 | 2.1 | 70 | 240(Typ) | 100000 | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF8736TRPBF
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R
|
Bestand
9
0,1654 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.35 | 18 | 4.8@10V | 17@4.5V | 50 | 2500 | 449 | 2315@15V | 3.9@10V|5.5@4.5V | Tape and Reel | 8 | SOIC | SO | No | Yes | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR3636TRLPBF
Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK T/R
|
Bestand
3.678
Von 0,4776 € bis 0,2621 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±16 | 2.5 | 99 | 6.8@10V | 33@4.5V | 110 | 1.05 | 143000 | 332 | 3779@50V | 5.4@10V|6.6@4.5V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDW10G65C5XKSA1
Diode Schottky SiC 650V 10A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
8
Von 1,4958 € bis 0,3489 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 650 | 10 | 58 | 1.7 | 400 | 300(Typ) | 65000 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB160N04S4H1ATMA1
Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
|
Bestand
5.000
0,7923 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 40 | ±20 | 4 | 160 | 1.6@10V | 105@10V | 0.9 | 105 | 167000 | 8400@25V | 1.4@10V | Tape and Reel | 7 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKQ120N60CTXKSA1
Trans IGBT Chip N-CH 600V 160A 833W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
|
Bestand
240
Von 11,2617 € bis 14,9001 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 160 | 833 | Tube | 3 | TO-247 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH5302TRPBF
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R
|
Bestand
4.790
Von 0,3498 € bis 0,6823 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 32 | 2.1@10V | 29@4.5V|76@10V | 1.2 | 76 | 3600 | 4400@15V | 1.8@10V|2.8@4.5V | Tape and Reel | 8 | PQFN EP | QFN | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRLR7843TRPBF
Trans MOSFET N-CH 30V 161A 3-Pin(2+Tab) DPAK T/R
|
Bestand
14.036
Von 0,3265 € bis 0,4664 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 30 | ±20 | 161 | 3.3@10V | 34@4.5V | 140000 | 4380@15V | 2.6@10V|3.2@4.5V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC350N20NSFDATMA1
Trans MOSFET N-CH 200V 35A 8-Pin TDSON EP T/R
|
Bestand
29
Von 1,2552 € bis 1,2986 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 200 | 20 | 4 | 35 | 35@10V | 22@10V | 50 | 1 | 22 | 150000 | 1810@100V | 31@10V | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPD60R800CEAUMA1
Trans MOSFET N-CH 600V 8.4A 3-Pin(2+Tab) DPAK T/R
|
Bestand
2.500
0,2022 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 3.5 | 8.4 | 800@10V | 17.2@10V | 62 | 2.6 | 17.2 | 74000 | 373@100V | 680@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ065N03LSATMA1
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
|
Bestand
5.028
Von 0,4885 € bis 0,7262 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 2 | 12 | 6.5@10V | 5.2@4.5V|10@10V | 60 | 4.9 | 10 | 2100 | 270 | 670@15V | 5.4@10V|6.9@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ031NE2LS5ATMA1
Trans MOSFET N-CH 25V 19A 8-Pin TSDSON EP T/R
|
Bestand
4.620
Von 0,6064 € bis 1,1088 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 25 | 16 | 2 | 19 | 3.1@10V | 6.3@4.5V|13.6@10V | 13.6 | 2100(Typ) | 910@12V | 2.6@10V|3.2@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP65R125C7XKSA1
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220 Tube
|
Bestand
500
Von 1,9621 € bis 3,855 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 4 | 18 | 125@10V | 35@10V | 62 | 35 | 101000 | 1670@400V | 111@10V | Tube | 3 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF5210STRL
Trans MOSFET P-CH Si 100V 38A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Bestand
6
3,9069 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 38 | 60@10V | 150@10V | 150 | 3100 | 2780@25V | Tape and Reel | 3 | D2PAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS16WH6327XTSA1
Diode Switching Si 85V 0.25A 3-Pin SOT-323 T/R Automotive AEC-Q101
|
Bestand
27.582
Von 0,2315 € bis 0,2318 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Switching Diode | Si | Single | 85 | 0.25 | 4.5 | 1.25@0.15A | 1@75V | 4 | 250 | Tape and Reel | 3 | SOT-323 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAN60R180P7SXKSA1
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
500
Von 0,7243 € bis 1,8966 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4 | 18 | 180@10V | 25@10V | 25 | 26000 | 1081@400V | 145@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB6U50N16W1RPB11BPSA1 Trans IGBT Module N-CH 1200V 50A 26-Pin Tray |
Bestand
300
5,8076 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Single | ±20 | 1200 | 50 | Tray | 26 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD100N04S402ATMA1
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
Bestand
12.500
Von 0,5862 € bis 0,5889 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 100 | 2@10V | 91@10V | 1 | 91 | 150000 | 7250@25V | 1.7@10V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes |