Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IST007N04NM6AUMA1
Trans MOSFET N-CH 40V 54A 6-Pin(5+Tab) sTOLL T/R
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Bestand
760
Von 1,84 € bis 3,6108 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Source | Enhancement | 1 | 40 | 20 | 54 | 0.7@10V | 114@10V | 114 | 3800 | 7900@20V | Tape and Reel | 6 | sTOLL | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6645TRPBF
Trans MOSFET N-CH Si 100V 5.7A 7-Pin Direct-FET SJ T/R
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Bestand
980
Von 0,4641 € bis 0,6649 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Dual Source | Enhancement | 1 | 100 | ±20 | 4.9 | 5.7 | 35@10V | 14@10V | 14 | 2200 | 890@25V | 28@10V | Tape and Reel | 7 | Direct-FET SJ | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFR4105Z
Trans MOSFET N-CH Si 55V 30A 3-Pin(2+Tab) DPAK Tube Automotive AEC-Q101
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Bestand
6
0,453 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 30 | 24.5@10V | 18@10V | 18 | 48000 | 740@25V | 19@10V | Tube | 3 | DPAK | TO | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUC80N04S6N036ATMA1
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R
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Bestand
5.000
1,1057 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 80 | 3.68@10V | 17@10V | 17 | 50000 | 1029@25V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA65R280E6XKSA1
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
401
Von 0,9295 € bis 0,1811 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 13.8 | 280@10V | 45@10V | 80 | 3.7 | 45 | 32000 | 950@100V | 250@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6674TRPBF
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R
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Bestand
4.663
Von 1,1247 € bis 2,3237 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Dual Source | Enhancement | 1 | 60 | ±20 | 4.9 | 13.4 | 11@10V | 24@10V | 35 | 1.4 | 24 | 3600 | 1580 | 1350@25V | 10@8V|9.9@10V|9.5@12V|9.4@14V|9.3@16V | Tape and Reel | 7 | Direct-FET MZ | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD350N06LGBTMA1
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R
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Bestand
8.202
Von 0,1845 € bis 0,3794 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 2 | 29 | 35@10V | 10@5V | 68000 | 600@30V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGT65R035D2ATMA1
Enhancement-Mode Power GaN Transistor
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Bestand
1
4,3391 €
pro Stück
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Infineon Technologies AG | MOSFETs | 8 | HSOF EP | SO | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC110N15NS5ATMA1
Trans MOSFET N-CH 150V 76A 8-Pin TDSON EP T/R
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Bestand
14.992
Von 0,9995 € bis 1,8911 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | 20 | 4.6 | 76 | 11@10V | 28@10V | 50 | 1 | 28 | 125000 | 515 | 2080@75V | 9@10V|10@8V | Tape and Reel | Unknown | 8 | TDSON EP | SON | Unknown | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF500R17KE4BOSA1
Trans IGBT Module N-CH 1700V 500A 7-Pin AG-62MM Tray
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Bestand
10
231,2753 €
pro Stück
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Infineon Technologies AG | IGBT-Module | Field Stop|Trench | N | Dual | ±20 | 1700 | 500 | 45000 | Tray | 7 | AG-62MM | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R040CM8XKSA1
Trans MOSFET N-CH 650V 62A 3-Pin(3+Tab) TO-247 Tube
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Bestand
200
Von 3,4925 € bis 5,437 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 62 | 40@10V | 80@10V | 80 | 329000 | 3796@400V | Tube | 3 | TO-247 | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPC100N04S5L1R5ATMA1
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
4.990
2,1769 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±16 | 2 | 100 | 1.5@10V | 70@10V | 50 | 1.3 | 70 | 115000 | 905 | 4020@25V | 1.2@10V|1.5@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB081N06L3GATMA1
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
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Bestand
44.000
Von 0,4585 € bis 0,5028 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 2.2 | 50 | 8.1@10V | 22@4.5V | 62 | 1.9 | 79000 | 690 | 3700@30V | 6.7@10V|7@10V|9.4@4.5V|9.7@4.5V | OptiMOS | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPQC60T017S7AXTMA1
Trans MOSFET N-CH 600V 113A 22-Pin HDSOP EP T/R Automotive AEC-Q101
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Bestand
10
Von 7,0627 € bis 4,1205 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Gate Octal Source Eleven Drain | Enhancement | 1 | 600 | 20 | 113 | 17@12V | 196@12V | 500000 | 7370@300V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQDH88N06LM5CGSCATMA1
Trans MOSFET N-CH 60V 42A 9-Pin WHTFN EP T/R
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Bestand
100
Von 1,9324 € bis 1,4158 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Quad Source | Enhancement | 1 | 60 | 20 | 42 | 0.86@10V | 76@4.5V|152@10V | 152 | 3000 | 11000@30V | 9 | WHTFN EP | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUZ30N10S5L240ATMA1
Trans MOSFET N-CH 100V 30A 8-Pin TSDSON EP T/R Automotive AEC-Q101
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Bestand
15.000
Von 0,287 € bis 0,2953 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 2.2 | 30 | 24@10V | 9.5@10V | 9.5 | 45500 | 640@50V | 8 | TSDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP843FH6327XTSA1
Trans RF BJT NPN 2.25V 0.055A 125mW Automotive AEC-Q101 4-Pin TSFP T/R
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Bestand
1.890
Von 0,3706 € bis 0,5667 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | SiGe | Single Dual Emitter | 2.25 | 1 | 2.9 | 0.055 | 1.8V/15mA | 120 to 200 | 150@15mA@1.8V | 0.7 | 125 | 5.23 | 8(Typ) | 25 | 24.5 | 1.7 | Tape and Reel | 4 | TSFP | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA65R027M1HXKSA1
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package
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Bestand
112
3,5314 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 23 | 5.7 | 60 | 34@18V | 63@18V | 62 | 0.66 | 227000 | 244 | 2131@400V | 27@18V | Tube | 4 | TO-247 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R120P7XKSA1
Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
1.754
Von 1,5359 € bis 3,1185 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4 | 26 | 120@10V | 36@10V | 62 | 36 | 28000 | 1544@400V | 100@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPD03N50C3ATMA1
Trans MOSFET N-CH 500V 3.2A 3-Pin(2+Tab) DPAK T/R
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Bestand
4.646
Von 0,5381 € bis 0,6035 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 3.9 | 3.2 | 1400@10V | 15@10V | 75 | 15 | 38000 | 350@25V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR48ZTRLPBF
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R
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Bestand
72.000
Von 0,5079 € bis 0,5325 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 62 | 11@10V | 40@10V | 40 | 91000 | 1720@25V | 8.86@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN65R1K5CEATMA1
Trans MOSFET N-CH 650V 5.2A 3-Pin SOT-223 T/R
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Bestand
6.000
Von 0,0974 € bis 0,0987 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 5.2 | 1500@10V | 10.5@10V | 75 | 10.5 | 5000 | 225@100V | 1350@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKWH30N65WR5XKSA1
IGBT Discrete Chip
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Bestand
210
Von 1,2137 € bis 2,6779 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS50R12KE3BPSA1
Trans IGBT Module N-CH 1200V 50A 270W 28-Pin ECONO2B Tray
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Bestand
13
Von 50,7552 € bis 60,8124 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 50 | 270 | 28 | ECONO2B | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR1205TRPBF
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R
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Bestand
296.004
0,2874 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 44 | 27@10V | 65(Max)@10V | 65(Max) | 107000 | 1300@25V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |