Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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FP30R06W1E3BOMA1
Trans IGBT Module N-CH 600V 37A 115W 20-Pin EASY1B-1 Tray
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Bestand
24
Von 8,3928 € bis 8,5202 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Array 7 | ±20 | 600 | 37 | 115 | Tray | 20 | EASY1B-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gekauft
BCW66KHE6327HTSA1
Trans GP BJT NPN 45V 0.8A 500mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
21.000
0,0184 €
pro Stück
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Infineon Technologies AG | GP BJT | NPN | Bipolar Small Signal | Si | Single | 45 | 1 | 75 | 5 | 1.25@10mA@100mA|1.25@50mA@500mA | 0.8 | 30 to 50|50 to 120|120 to 200|200 to 300 | 180@10mA@1V|250@100mA@1V|40@500mA@1V | 500 | 0.3@10mA@100mA|0.45@50mA@500mA | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS4005E6433HTMA1
Diode Schottky Si 0.12A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
40.000
Von 0,016 € bis 0,1289 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Dual Common Cathode | 0.12 | 0.2 | 1@0.04A | 1@30V | 5 | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAV70E6433HTMA1
Diode Switching Si 85V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
10.831
0,0232 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Switching Diode | Si | Dual Common Cathode | 85 | 0.2 | 4.5 | 1.25@0.15A | 0.15@70V | 1.5 | 4 | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gekauft
IPD082N10N3GATMA1
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R
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Bestand
5.031
Von 0,5298 € bis 0,8374 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 3.5 | 80 | 8.2@10V | 42@10V | 62 | 1.2 | 42 | 125000 | 2990@50V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA65R650CEXKSA1
Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
284
0,3487 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 10.1 | 650@10V | 23@10V | 80 | 4.5 | 23 | 28000 | 440@100V | 540@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP040N08NF2SAKMA1
Trans MOSFET N-CH 80V 22A 3-Pin(3+Tab) TO-220 Tube
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Bestand
590
Von 0,6796 € bis 0,946 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 80 | 20 | 3.8 | 22 | 4@10V | 54@10V | 54 | 3800 | 3800@40V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R180P7XKSA1
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
549
Von 1,019 € bis 2,2962 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4 | 18 | 180@10V | 25@10V | 62 | 25 | 26000 | 1081@400V | 145@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDW16G65C5XKSA1
Diode Schottky SiC 650V 16A 3-Pin(3+Tab) TO-247 Tube
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Bestand
227
2,9651 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 650 | 16 | 95 | 1.7 | 200 | 470(Typ) | 94000 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPS65R400CEAKMA1
Trans MOSFET N-CH 650V 15.1A 3-Pin(3+Tab) TO-251 Tube
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Bestand
1.036
0,3867 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 15.1 | 400@10V | 39@10V | 62 | 39 | 118000 | 710@100V | 360@10V | Tube | 3 | TO-251 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPSA70R900P7SAKMA1
Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-251 Tube
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Bestand
500
0,2091 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | 16 | 3.5 | 6 | 900@10V | 6.8@10V | 62 | 6.8 | 30500 | 211@400V | 740@10V | Tube | 3 | TO-251 | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6662TRPBF
Trans MOSFET N-CH Si 100V 8.3A 7-Pin Direct-FET MZ T/R
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Bestand
52
Von 0,9122 € bis 0,9588 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Dual Source | Enhancement | 1 | 100 | ±20 | 8.3 | 22@10V | 22@10V | 22 | 2800 | 1360@25V | 17.5@10V | Tape and Reel | 7 | Direct-FET MZ | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDK12G65C5XTMA2
Diode Schottky 650V 12A 3-Pin(2+Tab) D2PAK T/R
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Bestand
1.000
1,3903 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 650 | 12 | 97 | 1.8 | 190 | 360(Typ) | 104000 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BAR81WH6327XTSA1
Diode PIN Switch 30V 100mA 4-Pin(3+Tab) SOT-343 T/R
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Bestand
356
Von 0,1946 € bis 0,2045 €
pro Stück
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Infineon Technologies AG | PIN | Switch | Single Dual Anode Dual Cathode | 30 | 100 | 1@5mA | 1 | 0.9@3V | 0.08 | 100 | Tape and Reel | 4 | SOT-343 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF40B207
Trans MOSFET N-CH Si 40V 95A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
126.625
Von 0,3231 € bis 0,3541 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 95 | 4.5@10V | 45@10V | 45 | 83000 | 2110@25V | 3.6@10V|5.4@6V | HEXFET | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPC100N04S5L1R1ATMA1
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
4.956
Von 0,6596 € bis 0,7381 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±16 | 2 | 100 | 1.1@10V | 105@10V | 50 | 1 | 105 | 150000 | 1440 | 6200@25V | 0.9@10V|1.1@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP35R12KT4BOSA1
Trans IGBT Module N-CH 1200V 35A 210W 23-Pin ECONO2-4
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Bestand
3
41,4182 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 35 | 210 | 23 | ECONO2-4 | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP75R12N3T7B11BPSA1
Trans IGBT Module N-CH 1200V 75A 35-Pin Tray
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Bestand
10
19,1494 €
pro Stück
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Infineon Technologies AG | IGBT-Module | Trench Stop | N | Hex | ±20 | 1200 | 75 | Tray | 35 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP50R399CPXKSA1
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
369
0,8356 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 3.5 | 9 | 399@10V | 17@10V | 62 | 1.5 | 17 | 83000 | 890@100V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R095C7XKSA1
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube
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Bestand
420
Von 2,1552 € bis 2,7988 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 4 | 24 | 95@10V | 45@10V | 62 | 45 | 128000 | 2140@400V | 84@10V | Tube | 3 | TO-247 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF750R17ME7DB11BPSA1
Trans IGBT Module N-CH 1700V 750A 11-Pin ECONOD-3 Tray
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Bestand
10
91,8999 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1700 | 750 | Tray | 11 | ECONOD-3 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD435N34KHPSA1
Rectifier Diode
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Bestand
2
356,9939 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Dual Series | 3400 | Tray | 3 | PB60-1 | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F1225R12KT4GBOSA1
Trans IGBT Module N-CH 1200V 25A 160W 38-Pin ECONO3-4 Tray
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Bestand
10
82,2299 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Array 12 | ±20 | 1200 | 25 | 160 | Tray | 38 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR3802PBF
Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube
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Bestand
2.799
0,3702 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 12 | ±12 | 84 | 8.5@4.5V | 27@5V | 88000 | 2490@6V | 6.5@4.5V | Tube | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI3306GPBF
Trans MOSFET N-CH 60V 71A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
916
Von 1,551 € bis 2,6081 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 71 | 4.2@10V | 90@10V | 90 | 46000 | 4685@50V | 3.3@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No |