Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BAT5405E6327HTSA1
Diode Schottky Si 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
39.510
Von 0,0362 € bis 0,023 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Dual Common Cathode | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 10 | 5 | 230 | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU3910PBF
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) IPAK Tube
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Bestand
825
16,6668 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 16 | 115@10V | 44(Max)@10V | 2.4 | 44(Max) | 79000 | 640@25V | Tube | 3 | IPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ16DN25NS3GATMA1
Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP T/R
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Bestand
20.758
2,0905 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 250 | ±20 | 4 | 10.9 | 165@10V | 8.6@10V | 8.6 | 62500 | 690@100V | 146@10V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKQ200N75CP2XKSA1
Trans IGBT Chip N-CH 750V 200A 1071W 3-Pin(3+Tab) TO-247 Tube
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Bestand
302
Von 6,8753 € bis 9,8132 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 750 | 200 | 1071 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDWD120E120D7XKSA1
Diode Switching 1.2KV 177A 2-Pin(2+Tab) TO-247 Tube
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Bestand
215
Von 2,0378 € bis 2,1812 €
pro Stück
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Infineon Technologies AG | Gleichrichter | 2 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDWD30E120D7XKSA1
Diode Switching 1.2KV 52A 2-Pin(2+Tab) TO-247 Tube
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Bestand
236
1,1696 €
pro Stück
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Infineon Technologies AG | Gleichrichter | 2 | TO-247 | TO | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISA170230C04LMDSXTMA1
Power-Transistor MOSFET
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Bestand
3.978
Von 0,2913 € bis 0,3776 €
pro Stück
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Infineon Technologies AG | MOSFETs | 8 | DSO | SO | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG65R060M2HXTMA1
Trans MOSFET N-CH SiC 650V 34.9A 8-Pin(7+Tab) D2PAK T/R
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Bestand
1.000
Von 2,6321 € bis 3,7551 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 650 | 23 | 34.9 | 73@18V | 18@18V | 148000 | 669@400V | 8 | D2PAK | TO | Unknown | Yes | Unknown | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIMDQ75R025M2HXTMA1
Trans MOSFET N-CH SiC 750V 70A 22-Pin HDSOP EP T/R Automotive AEC-Q101
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Bestand
750
Von 5,976 € bis 8,501 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Ten Source Eleven Drain | Enhancement | 1 | 750 | 23 | 70 | 31@18V | 49@18V | 272000 | 1729@500V | 22 | HDSOP EP | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISG0614N06NM5HSCATMA1
Trans MOSFET N-CH 60V 31A T/R
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Bestand
3.000
2,3797 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 60 | 20 | 31 | 1.6@10V | 68@10V | 68 | 3000 | 4900@30V | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR6304E6327HTSA1
Diode PIN Switch 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R
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Bestand
69
Von 0,0923 € bis 0,2419 €
pro Stück
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Infineon Technologies AG | PIN | Switch | SHF | Dual Series | 50 | 100 | 1(Typ)@10mA | 1.2 | 2@5mA | 0.01 | 0.3@5V | 0.075 | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDK05G120C5XTMA1
Diode Schottky SiC 1.2KV 19.1A 3-Pin(2+Tab) D2PAK T/R
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Bestand
669
Von 1,0738 € bis 0,3325 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single Dual Cathode | 1200 | 19.1 | 59 | 1.8@5A | 33 | 301(Typ) | 109000 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF1800R23IE7BPSA1
Trans IGBT Module N-CH 2300V 1.8KA 14-Pin Tray
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Bestand
1
532,4438 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 2300 | 1800 | Tray | 14 | No | No | No | No | 3A228.c | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FP50R12N2T7PBPSA1 Trans IGBT Module N-CH 1200V 50A 23-Pin Tray |
Bestand
10
13,1822 €
pro Stück
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Infineon Technologies AG | IGBT-Module | Trench Stop | N | Hex | ±20 | 1200 | 50 | Tray | 23 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF2204PBF
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
3
0,6812 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 210 | 3.6@10V | 130@10V | 130 | 330000 | 5890@25V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC016N04NM7VATMA1
Trans MOSFET N-CH 40V 31A T/R
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Bestand
5.000
Von 0,363 € bis 0,7392 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 31 | 1.49@15V | 37@10V | 37 | 3000 | 2400@20V | Tape and Reel | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDWD60G120C5XKSA1
Diode Schottky 1.2KV 153A 2-Pin(2+Tab) TO-247 Tube
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Bestand
230
Von 9,0496 € bis 11,1115 €
pro Stück
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Infineon Technologies AG | Gleichrichter | 2 | TO-247 | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKFW40N60DH3EXKSA1
Trans IGBT Chip N-CH 600V 34A 111W 3-Pin(3+Tab) TO-247 Tube
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Bestand
40
Von 2,4533 € bis 4,371 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 34 | 111 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKQ100N60TXKSA1
Trans IGBT Chip N-CH 600V 160A 714W 3-Pin(3+Tab) TO-247 Tube
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Bestand
240
Von 5,5821 € bis 8,1546 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Field Stop|Trench | N | Single | ±20 | 600 | 160 | 714 | Tube | 3 | TO-247 | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW15N120T2FKSA1
Trans IGBT Chip N-CH 1200V 30A 235W 3-Pin(3+Tab) TO-247 Tube
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Bestand
395
Von 1,5765 € bis 1,6983 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1200 | 30 | 235 | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKW30N65ES5XKSA1
Trans IGBT Chip N-CH 650V 62A 188W 3-Pin(3+Tab) TO-247 Tube
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Bestand
232
Von 1,8313 € bis 3,3949 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 62 | 188 | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKW40N60DTPXKSA1
Trans IGBT Chip N-CH 600V 67A 246W 3-Pin(3+Tab) TO-247 Tube
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Bestand
300
Von 1,2542 € bis 2,7788 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 67 | 246 | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKW50N65EH5XKSA1
Trans IGBT Chip N-CH 650V 80A 275W 3-Pin(3+Tab) TO-247 Tube
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Bestand
156
Von 1,8333 € bis 0,6346 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 80 | 275 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKW75N65EH5XKSA1
Trans IGBT Chip N-CH 650V 90A 395W 3-Pin(3+Tab) TO-247 Tube
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Bestand
240
Von 2,3369 € bis 2,9386 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 90 | 395 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA50R800CEXKSA2
Trans MOSFET N-CH 500V 7.6A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
950
Von 0,2451 € bis 0,2793 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | 20 | 3.5 | 7.6 | 800@13V | 12.4@10V | 80 | 12.4 | 26400 | 280@100V | 720@13V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No |