Infineon Technologies AG FET-Transistoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Category | Material | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Mode of Operation | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Typical Gate Charge @ Vgs - (nC) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical Output Capacitance - (pF) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IGOT60R070D1AUMA1
Enhancement-Mode Power GaN Transistor
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Infineon Technologies AG | MOSFETs | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||
AUIRFS8408-7TRL
Trans MOSFET N-CH Si 40V 397A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Quint Source | Enhancement | N | 1 | 40 | ±20 | 3.9 | 397 | 210@10V | 210 | 294000 | 10250@25V | 1@10V | 0.7@10V | Tape and Reel | 7 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||
BSZ110N08NS5
Trans MOSFET N-CH 80V 51A 8-Pin TSDSON EP T/R
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | Enhancement | N | 1 | 80 | 20 | 3.8 | 51 | 15@10V | 15 | 50000 | 1000@40V | 180 | 11@10V | 9.6@10V|13.4@6V | OptiMOS 5 | Tape and Reel | 8 | TSDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||
SPS01N60C3
Trans MOSFET N-CH 650V 0.8A 3-Pin(3+Tab) TO-251 Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 650 | ±20 | 3.9 | 0.8 | 3.9@10V | 3.9 | 11000 | 100@25V | 6000@10V | Tube | 3 | TO-251 | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||
| BSG0812NDATMA1 Trans MOSFET N-CH |
Von 0,6168 € bis 0,6662 €
pro Stück
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Infineon Technologies AG | MOSFETs | 6250 | Tape and Reel | 8 | TISON EP | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||
IGO60R070D1AUMA1
Enhancement-Mode Power GaN Transistor
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Infineon Technologies AG | MOSFETs | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||
BSS225H6327XTSA1
Trans MOSFET N-CH 600V 0.09A 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Small Signal | Single Dual Drain | Enhancement | N | 1 | 600 | ±20 | 0.09 | 3.9@10V | 3.9 | 1000 | 99@25V | 45000@10V | 28000@10V|30000@4.5V | Tape and Reel | 4 | SOT-89 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||
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AUIRLS3034-7P
Trans MOSFET N-CH Si 40V 380A Automotive 7-Pin(6+Tab) D2PAK Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Quint Source | Enhancement | N | 1 | 40 | ±20 | 380 | 120@4.5V | 380000 | 10990@40V | 1.4@10V | Tube | 7 | D2PAK | TO | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||
AUIRLS3034-7TRL
Trans MOSFET N-CH Si 40V 380A Automotive 7-Pin(6+Tab) D2PAK T/R
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Quint Source | Enhancement | N | 1 | 40 | ±20 | 380 | 120@4.5V | 380000 | 10990@40V | 1.4@10V | Tape and Reel | 7 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||
AUIRFSL6535
Trans MOSFET N-CH Si 300V 19A 3-Pin(3+Tab) TO-262 Tube Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 300 | ±20 | 5 | 19 | 38@10V | 38 | 210000 | 2340@25V | 185@10V | Tube | 3 | TO-262 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||
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AUIRFS8409-7P
Trans MOSFET N-CH Si 40V 522A 7-Pin(6+Tab) D2PAK Tube Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Quint Source | Enhancement | N | 1 | 40 | ±20 | 3.9 | 522 | 305@10V | 305 | 375000 | 13975@25V | 0.75@10V | 0.55@10V | 7 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||
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AUIRFS8408-7P
Trans MOSFET N-CH Si 40V 397A 7-Pin(6+Tab) D2PAK Tube Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Quint Source | Enhancement | N | 1 | 40 | ±20 | 3.9 | 397 | 210@10V | 210 | 294000 | 10250@25V | 1@10V | 0.7@10V | Tube | 7 | D2PAK | TO | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||
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AUIRFS8407-7TRL
Trans MOSFET N-CH Si 40V 306A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Quint Source | Enhancement | N | 1 | 40 | ±20 | 3.9 | 306 | 150@10V | 150 | 231000 | 7437@25V | 1.3@10V | 1@10V | Tape and Reel | 7 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||
AUIRF7675M2TR
Trans MOSFET N-CH Si 150V 4.4A Automotive 7-Pin Direct-FET M2 T/R
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Von 1,3151 € bis 1,3943 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Quad Drain Dual Source | Enhancement | N | 1 | 150 | ±20 | 5 | 4.4 | 21@10V | 21 | 2700 | 1360@25V | 56@10V | 47@10V | Tape and Reel | 7 | Direct-FET M2 | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||
AUIRF7342QTR
Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Dual Dual Drain | Enhancement | P | 2 | 55 | ±20 | 3 | 3.4 | 26@10V | 26 | 2000 | 690@25V | 105@10V | 95@10V|150@4.5V | Tape and Reel | 8 | SOIC | SO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||
PTFB193404FV1R0XTMA1
Trans RF MOSFET N-CH 65V 7-Pin Case 37275 T/R
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Infineon Technologies AG | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone | 65 | 10 | 340 | 19 | 1930 | 1990 | 50(Typ)@10V | Tape and Reel | 7 | Case 37275 | No | No | No | No | No | EAR99 | No | ||||||||||||||||||
IGT60R070D1
Enhancement-Mode Power GaN Transistor
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Infineon Technologies AG | MOSFETs | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||
IGT40R070D1E8220ATMA1
Enhancement-Mode Power GaN Transistor
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Infineon Technologies AG | MOSFETs | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||
IPT60R145CFD7XTMA1
Trans MOSFET N-CH 600V 19A 9-Pin(8+Tab) HSOF T/R
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single Seven Source | Enhancement | N | 1 | 600 | 20 | 4.5 | 19 | 28@10V | 28 | 116000 | 1199@400V | 145@10V | 9 | HSOF | SO | No | No | No | No | EAR99 | No | |||||||||||||||||
BF 2040W H6814
Trans RF FET N-CH 8V 0.04A Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R
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Infineon Technologies AG | HF-MOSFETs | Si | Single Dual Gate | Depletion | N | 1 | 8 | 6 | 0.04 | 200 | 2.9@5V@Gate 1 | 23 | 1000 | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||
IPS60R460CEAKMA1
Trans MOSFET N-CH 600V 13.1A 3-Pin(3+Tab) TO-251 Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 600 | 20 | 3.5 | 13.1 | 28@10V | 28 | 102000 | 620@100V | 460@10V | 410@10V | Tube | 3 | TO-251 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||
IPI50R250CPXKSA1
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-262 Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 500 | ±20 | 13 | 27@10V | 27 | 114000 | 1420@100V | 250@10V | Tube | 3 | TO-262 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||
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IPI65R110CFDXKSA1
Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-262 Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 650 | 20 | 31.2 | 118@10V | 118 | 277800 | 3240@100V | 110@10V | Tube | 3 | TO-262 | TO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||
IPI65R150CFDXKSA1
Trans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-262 Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 650 | 30 | 4.5 | 22.4 | 86@10V | 86 | 195300 | 2340@100V | 150@10V | Tube | 3 | TO-262 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||
IPP065N04NGXKSA1
Trans MOSFET N-CH 40V 50A 3-Pin(3+Tab) TO-220 Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 40 | ±20 | 50 | 26@10V | 26 | 68000 | 2100@20V | 6.5@10V | Tube | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No |