Infineon Technologies AG FET-Transistoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Category | Material | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Mode of Operation | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Typical Gate Charge @ Vgs - (nC) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical Output Capacitance - (pF) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| IAUCN04S7N024DATMA1 MOSFET Automotive AEC-Q101 |
Von 0,6196 € bis 0,6715 €
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Infineon Technologies AG | MOSFETs | Yes | AEC-Q101 | Yes | Yes | Yes | |||||||||||||||||||||||||||||||||||
IRF3546MTRPBF
Trans MOSFET N-CH 25V 16A/20A 42-Pin QFN EP T/R
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Infineon Technologies AG | MOSFETs | Power MOSFET | Quad | Enhancement | N | 4 | 25 | ±20 | 2.1 | 16@Q1@Q3|20@Q2@Q4 | 9.7@4.5V | 1310@13V | 3.9@10V | 3.2@10V|1.35@10V|4.1@4.5V|1.8@4.5V | Tape and Reel | 42 | QFN EP | QFN | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||
IRFF120
Trans MOSFET N-CH 100V 6A 3-Pin TO-39
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10,2235 €
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 100 | ±20 | 6 | 18(Max)@10V | 18(Max) | 20000 | 350@25V | 350@10V | 3 | TO-39 | TO | No | Yes | No | No | No | No | EAR99 | No | ||||||||||||||||
IPS060N03LGAKMA1
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 30 | ±20 | 50 | 10.8@4.5V|22@10V | 22 | 56000 | 1700@15V | 6@10V | 5@10V|7.2@4.5V | Tube | 3 | TO-251 | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||
AUIRLS3034
Trans MOSFET N-CH Si 40V 343A 3-Pin(2+Tab) D2PAK Tube Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 40 | ±20 | 2.5 | 343 | 108@4.5V | 375000 | 10315@25V | 1.7@10V | Tube | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||
IPD65R420CFDBTMA1
Trans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) DPAK T/R
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 650 | 20 | 8.7 | 31.5@10V | 31.5 | 83300 | 870@100V | 420@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||
GRP-DATA-JANSF2N7616UB
Trans MOSFET N-CH 60V 0.8A 4-Pin Case UB
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 60 | ±10 | 0.8 | 3.6(Max)@4.5V | 600 | 166@25V | 680@4.5V | Yes | 4 | Case UB | No | No | No | No | No | EAR99 | No | ||||||||||||||||||
GRP-DATA-IRHY57234CMSES
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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Infineon Technologies AG | MOSFETs | N | 250 | 9.6 | 750000 | 3 | TO-257AA | TO | No | No | No | No | No | ||||||||||||||||||||||||||||
| GS-065-060-5-T-A-MR Trans MOSFET N-CH GaN 650V 60A 4-Pin WLGA T/R Automotive AEC-Q101 |
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Infineon Technologies AG | MOSFETs | Power MOSFET | GaN | Single Dual Gate | Enhancement | N | 1 | 650 | 7 | 60 | 14@6V | 516@400V | 32@6V | 4 | WLGA | LGA | Yes | AEC-Q101 | Yes | Unknown | No | ||||||||||||||||||||
| IAUT165N08S5N029ATMA1 Trans MOSFET N-CH 80V 165A 9-Pin(8+Tab) HSOF |
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single Seven Source | Enhancement | N | 1 | 80 | ±20 | 165 | 70@10V | 167000 | 4900@40V | 2.9@10V | 9 | HSOF | SO | No | EAR99 | Yes | Yes | |||||||||||||||||||||
IGLT65R045D2ATMA1
Enhancement-Mode Power GaN Transistor
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Von 3,1081 € bis 3,3681 €
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Infineon Technologies AG | MOSFETs | 16 | HDSOP EP | SO | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||
| BSB104N08NP3GXUMA1 Power MOSFET |
Von 0,5365 € bis 0,5814 €
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Infineon Technologies AG | MOSFETs | 5 | WDSON | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||
IRFB3207ZGPBF
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 75 | ±20 | 170 | 120@10V | 120 | 300000 | 6920@50V | 4.1@10V | 3.3@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||
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AUIRFS6535TRL
Trans MOSFET N-CH Si 300V 19A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Von 1,643 € bis 1,7994 €
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 300 | ±20 | 5 | 19 | 38@10V | 38 | 210000 | 2340@25V | 185@10V | Tape and Reel | 3 | D2PAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||
IPI100N04S3-03
Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-262 Tube Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 40 | ±20 | 100 | 110@10V | 110 | 214000 | 7400@25V | 2.8@10V | Tube | 3 | TO-262 | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||
IPP77N06S3-09
Trans MOSFET N-CH 55V 77A 3-Pin(3+Tab) TO-220AB Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 55 | ±20 | 77 | 77@10V | 77 | 107000 | 5335@25V | 9.1@10V | 3 | TO-220AB | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||
IRF7341GTRPBF
Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
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0,5593 €
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Infineon Technologies AG | MOSFETs | Power MOSFET | Dual Dual Drain | Enhancement | N | 2 | 55 | ±20 | 1(Min) | 5.1 | 29@10V | 29 | 2400 | 780@25V | 50@10V | 43@10V|56@4.5V | Tape and Reel | 8 | SOIC | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||
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IRL40B215
Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 40 | ±20 | 2.4 | 164 | 56@4.5V | 143000 | 5225@25V | 2.7@10V | 2.2@10V|2.8@4.5V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||
IPLK80R600P7ATMA1
Trans MOSFET N-CH 800V 8A 8-Pin TDSON EP T/R
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | Enhancement | N | 1 | 800 | 20 | 8 | 20@10V | 20 | 60000 | 570@500V | 600@10V | Tape and Reel | 8 | TDSON EP | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||
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AUIRF1404STRL
Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 40 | ±20 | 4 | 162 | 160@10V | 160 | 3800 | 7360@25V | 4@10V | 3.5@10V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||
IRF60SC241ARMA1
Trans MOSFET N-CH 60V 363A 7-Pin(6+Tab) TO-263 T/R
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quint Source | Enhancement | N | 1 | 60 | 20 | 3.7 | 363 | 311@10V | 311 | 2400 | 16000@30V | 1.3@10V | Tape and Reel | 7 | TO-263 | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||
AIMBG75R020M1HXTMA1
Trans MOSFET N-CH SiC 750V 81A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101
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Von 8,0397 € bis 8,7135 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | Single Hex Source | Enhancement | N | 1 | 750 | 23 | 81 | 70@18V | 326000 | 2326@500V | 27@18V | 8 | D2PAK | TO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||
IRF4104SPBF
Trans MOSFET N-CH Si 40V 120A 3-Pin(2+Tab) D2PAK Tube
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 40 | ±20 | 120 | 68@10V | 68 | 140000 | 3000@25V | 5.5@10V | 4.3@10V | Tube | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||
| BTS247ZE3062ANTMA1 Trans MOSFET N-CH 55V 33A Automotive AEC-Q101 5-Pin(4+Tab) TO-220AB SMD T/R |
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single | Enhancement | N | 1 | 55 | ±20 | 33 | 60@10V | 60 | 120000 | 1380@25V | 18@10V | Tape and Reel | 5 | TO-220AB SMD | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||
BSC005N03LS5IATMA1
Trans MOSFET N-CH 30V 42A 8-Pin TDSON EP T/R
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Von 0,7895 € bis 0,8556 €
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | Enhancement | N | 1 | 30 | 20 | 42 | 51@4.5V|109@10V | 109 | 3000 | 7900@15V | 550@10V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | EAR99 | Yes | Yes |