Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Material | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Diode Type | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Mode of Operation | Typical Input Resistance - (kOhm) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Typical Carrier Life Time - (us) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IDW80C65D2XKSA1
Diode Switching 650V 80A 3-Pin(3+Tab) TO-247 Tube
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Bestand
240
Von 1,6885 € bis 2,8318 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Switching Diode | Dual Common Cathode | 650 | 80 | 250 | 180000 | 2.20@40A | 40 | 36(Typ) | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQD063N15NM5SCATMA1
Trans MOSFET N-CH 150V 14.4A 8-Pin WHSON EP T/R
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Bestand
60
Von 2,086 € bis 3,0569 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 3000 | 150 | 14.4 | 20 | 6.32@10V | 48@10V | 48 | 3600@75V | 8 | WHSON EP | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP60R120C7XKSA1
Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220 Tube
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Bestand
480
Von 1,8715 € bis 3,553 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 92000 | 600 | 19 | 20 | 62 | 4 | 120@10V | 8@10V | 8 | 1500@400V | 103@10V | Tube | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF4MR20KM1HPHPSA1
Trans MOSFET N-CH SiC 2KV 245A 7-Pin Tray
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Bestand
1
403,1371 €
pro Stück
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Infineon Technologies AG | MOSFETs | SiC | Power MOSFET | N | Dual | Enhancement | 2 | 2000 | 245 | 20 | 5.3@18V | 1170@18V | 36100@1200V | 7 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH02G65C5XKSA2
Diode Schottky SiC 650V 2A 2-Pin(2+Tab) TO-220 Tube
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Bestand
434
Von 0,6649 € bis 1,3104 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 650 | 2 | 23 | 36000 | 1.7 | 70 | 70(Typ) | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R080P7XKSA1
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-247 Tube
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Bestand
480
Von 1,8931 € bis 2,0931 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 129000 | 600 | 37 | 20 | 62 | 4 | 80@10V | 51@10V | 51 | 2180@400V | 69@10V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPTC015N10NM5ATMA1
OptiMOS™ 5 power MOSFET in TOLT
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Bestand
172
Von 3,3832 € bis 4,3726 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Octal Drain Seven Source | Enhancement | 1 | 3800 | 100 | 35 | 20 | 1.5@10V | 166@10V | 166 | 12000@50V | OptiMOS 5 | Tape and Reel | 16 | HDSOP EP | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TT570N16KOFHPSA2
SCR Module Diode 1600V 900A(RMS) 17000A 7-Pin BG-PB60AT-1 Tray
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Bestand
1
103,3962 €
pro Stück
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Infineon Technologies AG | SCR Modules | 200 | 1000 | 2.2 | 1.27@1500A | 250 | 600 | 300 | 1600 | 1600 | 900 | 140 | Tray | 7 | BG-PB60AT-1 | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC220N20NSFDATMA1
Trans MOSFET N-CH 200V 52A 8-Pin TSON EP T/R
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Bestand
5.000
1,8778 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 214000 | 200 | 52 | 20 | 4 | 22@10V | 34@10V | 34 | 2770@100V | 17.7@10V | Tape and Reel | 8 | TSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUC80N04S6L032ATMA1
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R
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Bestand
5.000
Von 0,4925 € bis 1,0465 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 50000 | 40 | 80 | ±16 | 3.29@10V | 19@10V | 19 | 1165@25V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IGW30N65L5XKSA1
Trans IGBT Chip N-CH 650V 85A 227W 3-Pin(3+Tab) TO-247 Tube
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Bestand
250
Von 1,7034 € bis 3,6812 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 85 | 227 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA70R900P7SXKSA1
Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
500
1,1609 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 20500 | 700 | 6 | 16 | 80 | 3.5 | 900@10V | 6.8@10V | 6.8 | 211@400V | 740@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSG0810NDIATMA1
Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
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Bestand
2.680
Von 1,0729 € bis 2,7351 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 6250 | 25 | 31@Q1|50@Q2 | ±16 | 50 | 2 | 3@10V@Q1|0.9@10V@Q2 | 5.6@4.5V@Q1|16@4.5V@Q2 | 4.3@Q1|1.8@Q2 | 390@Q1|1400@Q2 | 770@12V@Q1|2300@12V@Q2 | 3.2@4.5V|2.4@10V@Q1|1@4.5V|0.7@10V@Q2 | Tape and Reel | 8 | TISON EP | SON | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUS300N08S5N011TATMA1
Trans MOSFET N-CH 80V 400A Automotive 16-Pin HDSOP EP T/R
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Bestand
370
Von 3,0868 € bis 5,3998 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Octal Drain Seven Source | Enhancement | 1 | 375000 | 80 | 400 | ±20 | 1.1@10V | 178@10V | 178 | 12500@40V | Tape and Reel | 16 | HDSOP EP | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R018CM8XKSA1
Trans MOSFET N-CH 650V 116A 3-Pin(3+Tab) TO-247 Tube
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Von 7,9625 € bis 8,3635 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 521000 | 650 | 116 | 20 | 18@10V | 173@10V | 173 | 8290@400V | Tube | 3 | TO-247 | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDW10G65C5XKSA1
Diode Schottky SiC 650V 10A 3-Pin(3+Tab) TO-247 Tube
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Bestand
8
1,452 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 650 | 10 | 58 | 65000 | 1.7 | 400 | 300(Typ) | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSO615CGXUMA1
Trans MOSFET N/P-CH 60V 3.1A/2A 8-Pin DSO T/R
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Bestand
865
1,3895 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | N|P | Dual Dual Drain | Enhancement | 2 | 2000 | 60 | 3.1@N Channel|2@P Channel | ±20 | 62.5 | 2 | 110@10V@N Channel|300@10V@P Channel | 15@10V@N Channel|13.5@10V@P Channel | 90 | 300@25V@N Channel|365@25V@P Channel | 8 | DSO | SO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD160N16SOFHPSA1
SCR Module Diode 1600V 275A(RMS) 5200A 5-Pin PB34SB-1 Tray
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Bestand
8
Von 43,2686 € bis 43,7963 €
pro Stück
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Infineon Technologies AG | SCR Modules | 1SCR/1Diode | 100 | 1000 | 2.5 | 1.82@500A | 145 | 160 | 200 | 1600 | 1600 | 275 | 30 | Tray | 5 | PB34SB-1 | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUTN06S5N008GATMA1
Trans MOSFET N-CH 60V 504A Automotive 9-Pin(8+Tab) HSOG T/R
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Bestand
1.800
Von 1,2972 € bis 1,3464 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 358000 | 60 | 504 | ±20 | 0.78@10V | 210@10V | 210 | 15600@30V | Tape and Reel | 9 | HSOG | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F3L340R12W3H7H11BPSA1
Trans IGBT Module N-CH 1200V 235A 18-Pin Tray
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Bestand
8
97,7414 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Quad | ±20 | 1200 | 235 | Tray | 18 | No | No | No | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC020N03LSGATMA1
Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R
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Bestand
16.016
Von 0,7317 € bis 0,7612 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 30 | 28 | ±20 | 2.2 | 2@10V | 34@4.5V|70@10V | 70 | 5400@15V | 1.7@10V|2.3@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
T920N06TOFXPSA1
Thyristor PCT 600V 1500A(RMS) 13.5kA 4-Pin T4814K0-1 Tray
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Bestand
4
26,3745 €
pro Stück
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Infineon Technologies AG | Thyristors | PCT | 300 | 1000 | 2 | 1.65@2500A | 200 | 925 | 200 | 600 | 600 | 1500 | 50 | Tray | 4 | T4814K0-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP60R040C7XKSA1
Trans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-220 Tube
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Bestand
150
Von 4,5655 € bis 5,6743 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 227000 | 600 | 50 | 20 | 62 | 4 | 40@10V | 107@10V | 0.55 | 107 | 4340@400V | 34@10V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDD09SG60CXTMA2
Diode Schottky 600V 9A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.425
2,3033 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 600 | 9 | 49 | 115000 | 2.1 | 80 | 280(Typ) | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP65R125C7XKSA1
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220 Tube
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Bestand
119
Von 1,8656 € bis 2,0727 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 101000 | 650 | 18 | 20 | 62 | 4 | 125@10V | 35@10V | 35 | 1670@400V | 111@10V | Tube | 3 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No |