Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Material | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Diode Type | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Mode of Operation | Typical Input Resistance - (kOhm) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Typical Carrier Life Time - (us) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPB60R180P7ATMA1
Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R
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Bestand
115
Von 1,8875 € bis 2,3583 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 72000 | 600 | 18 | 20 | 62 | 4 | 180@10V | 25@10V | 25 | 1081@400V | 145@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R099C7XKSA1
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
450
Von 2,1655 € bis 2,3409 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 33000 | 600 | 12 | 20 | 80 | 4 | 99@10V | 42@10V | 42 | 1819@400V | 85@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB7787PBF
Trans MOSFET N-CH 75V 76A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
6
0,6549 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 125000 | 75 | 76 | ±20 | 3.7 | 8.4@10V | 73@10V | 1.2 | 73 | 4020@25V | 6.9@10V|8.2@6V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R090CFD7XKSA1
Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-247 Tube
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Bestand
87
Von 3,5504 € bis 5,494 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 127000 | 650 | 25 | 20 | 90@10V | 53@10V | 53 | 2513@400V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKYX120N75CP2ALSA1
Trans IGBT Chip N-CH 750V 150A 577W 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
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Bestand
240
Von 5,6961 € bis 8,3628 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single Dual Emitter | ±20 | 750 | 150 | 577 | Tube | 4 | TO-247 | Yes | AEC-Q101 | Yes | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN60R360P7SATMA1
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R
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Bestand
3.000
Von 0,501 € bis 0,9675 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 7000 | 600 | 9 | 20 | 160 | 4 | 360@10V | 13@10V | 13 | 555@400V | 300@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW65R030M1HXKSA1
Trans MOSFET N-CH SiC 650V 58A 3-Pin(3+Tab) TO-247 Tube
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Bestand
646
Von 9,7355 € bis 10,1069 €
pro Stück
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Infineon Technologies AG | MOSFETs | SiC | Power MOSFET | N | Single | Enhancement | 1 | 197000 | 650 | 58 | 23 | 42@18V | 48@18V | 1643@400V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR6405WH6327XTSA1
Diode PIN Attenuator/Switch 150V 100mA 3-Pin SOT-323 T/R Automotive AEC-Q101
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Bestand
12.000
0,0689 €
pro Stück
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Infineon Technologies AG | PIN | Attenuator|Switch | HF|MF|SHF|UHF|VHF | 150 | Dual Common Cathode | 100 | 1.35@100mA | 250 | 20@1mA | 0.02 | 1.1 | 0.35@20V | 1.55 | Tape and Reel | 3 | SOT-323 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH12SG60CXKSA2
Diode Schottky 600V 12A 2-Pin(2+Tab) TO-220 Tube
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Bestand
1.461
Von 2,9604 € bis 5,5286 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 600 | 12 | 59 | 125000 | 2.1 | 100 | 310(Typ) | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA80R600P7XKSA1
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
405
Von 0,7464 € bis 1,6672 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 28000 | 800 | 8 | 20 | 80 | 3.5 | 600@10V | 20@10V | 4.5 | 20 | 570@500V | 510@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGW50N60H3FKSA1
Trans IGBT Chip N-CH 600V 100A 333W 3-Pin(3+Tab) TO-247 Tube
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Bestand
1.160
Von 1,4117 € bis 3,9769 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 100 | 333 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9120NTRLPBF
Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R
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Bestand
9.001
0,3245 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 40000 | 100 | 6.6 | ±20 | 4 | 480@10V | 27(Max)@10V | 27(Max) | 350@25V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F435MR07W1D7S8B11ABPSA1 EasyPACK 1B module with CoolMOS CFD7A Automotive MOSFET and PressFIT / NTC |
Bestand
24
Von 40,3058 € bis 25,2154 €
pro Stück
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Infineon Technologies AG | IGBT-Module | 23 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPC100N04S5L1R1ATMA1
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
4.856
Von 0,6995 € bis 0,7827 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 150000 | 40 | 100 | ±16 | 50 | 2 | 1.1@10V | 105@10V | 1 | 105 | 1440 | 6200@25V | 0.9@10V|1.1@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC065N06LS5ATMA1
Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R
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Bestand
5.000
0,42 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 60 | 15 | ±20 | 50 | 2.3 | 6.5@10V | 10@4.5V | 1400@30V | 5.3@10V|7.2@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW30N65ET7XKSA1 | TO-247 650V TRENCHSTOP IGBT7
Trans IGBT Chip N-CH 650V 60A 188W 3-Pin(3+Tab) TO-247 Tube
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Bestand
163
Von 2,2633 € bis 3,5072 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop 7 | N | Single | ±20 | 650 | 60 | 188 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ340N08NS3GATMA1
Trans MOSFET N-CH 80V 6A 8-Pin TSDSON EP T/R
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Bestand
1.985
Von 0,2974 € bis 1,0259 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2100 | 80 | 6 | ±20 | 3.5 | 34@10V | 6.8@10V | 6.8 | 470@40V | 27@10V|38@6V | OptiMOS | Tape and Reel | 8 | TSDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS209PWH6327XTSA1
Trans MOSFET P-CH 20V 0.63A 3-Pin SOT-323 T/R Automotive AEC-Q101
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Bestand
402.006
0,0359 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | P | Single | Enhancement | 1 | 300 | 20 | 0.63 | ±12 | 550@4.5V | 1@4.5V | 87@15V | Tape and Reel | 3 | SOT-323 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMWH170R650M1XKSA1
Trans MOSFET N-CH SiC 1.7KV 7.5A 3-Pin(3+Tab) TO-247 Tube
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Bestand
193
Von 2,3306 € bis 2,5034 €
pro Stück
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Infineon Technologies AG | MOSFETs | SiC | Power MOSFET | N | Single | Enhancement | 1 | 88000 | 1700 | 7.5 | 20 | 580@15V | 8.1@12V | 337@1000V | 3 | TO-247 | TO | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5803TRPBF
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R
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Bestand
3.000
0,1304 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | P | Single Quad Drain | Enhancement | 1 | 2000 | 40 | 3.4 | ±20 | 62.5 | 3 | 112@10V | 25@10V | 25 | 93 | 1110@25V | 51@12V|70@8V | Tape and Reel | 6 | TSOP | SO | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPB11N60C3ATMA1
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R
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Bestand
72.007
0,2342 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 125000 | 600 | 11 | ±20 | 3.9 | 380@10V | 45@10V | 1 | 45 | 1200@25V | 340@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC118N10NSGATMA1
Trans MOSFET N-CH 100V 11A 8-Pin TDSON EP T/R
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Bestand
5.000
0,4526 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 114000 | 100 | 11 | ±20 | 4 | 11.8@10V | 42@10V | 1.1 | 42 | 2800@50V | 10@10V | Tape and Reel | 8 | TDSON EP | SON | No | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS7530TRLPBF
Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
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Bestand
5
1,11 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 375000 | 60 | 295 | ±20 | 3.7 | 2@10V | 274@10V | 0.4 | 274 | 13703@25V | 1.65@10V|2.1@6V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP15R12W1T4BOMA1
Trans IGBT Module N-CH 1200V 28A 130W 20-Pin EASY1B-1 Tray
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Bestand
24
Von 25,2673 € bis 32,9122 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 28 | 130 | Tray | 20 | EASY1B-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB70N10S3L12ATMA1
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
6.790
3,1444 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 125000 | 100 | 70 | ±20 | 2.4 | 11.8@10V | 60@10V | 1.5 | 60 | 4270@25V | 9.8@10V|10.1@10V|11.9@4.5V|12.2@4.5V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes |