Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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ISZ230N10NM6ATMA1
Trans MOSFET N-CH 100V 7.7A 8-Pin TSDSON EP T/R
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Bestand
7.687
Von 0,3915 € bis 0,2135 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | 20 | 3000 | 7.7 | 23@10V | 7.4@10V | 7.4 | 530@50V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R600P7SXKSA1
Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
4
0,5555 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 62 | 4 | 21000 | 6 | 600@10V | 9@10V | 5.98 | 9 | 363@400V | 490@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA030N10NF2SXKSA1
Trans MOSFET N-CH 100V 83A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
1.000
Von 1,3831 € bis 3,5833 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | 20 | 41000 | 83 | 3@10V | 103@10V | 103 | 7300@50V | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD19DP10NMATMA1
Trans MOSFET P-CH 100V 2.6A 3-Pin(2+Tab) DPAK T/R
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Bestand
5.000
Von 0,3852 € bis 0,3995 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | 20 | 3000 | 2.6 | 186@10V | 36@10V | 36 | 1500@50V | Tape and Reel | 3 | DPAK | TO | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDWD75E65E7XKSA1
Diode Switching 650V 100A 2-Pin(2+Tab) TO-247 Tube
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Bestand
210
Von 1,1575 € bis 1,1601 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Switching Diode | Single | 650 | 100 | 300 | 2.1@75A | 20 | 258000 | 97(Typ) | Tube | 2 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB80N06S2L11ATMA2
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
1.000
0,9374 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 55 | ±20 | 2 | 158000 | 80 | 11@10V | 62@10V | 62 | 2075@25V | 10.4@4.5V|10.7@4.5V|8.4@10V|8.7@10V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISZ065N03L5SATMA1
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
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Bestand
5.000
0,1668 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 12 | 6.5@10V | 5.2@4.5V|10@10V | 10 | 670@15V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F3L225R12W3H3B11BPSA1
Trans IGBT Module N-CH 1200V 180A 53-Pin Tray
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Bestand
2
37,4647 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Quad | ±20 | 1200 | 180 | Tray | 53 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUC100N10S5N040ATMA1
100V, N-Ch, 4 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5
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Bestand
1.500
Von 0,9403 € bis 1,5145 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 3.8 | 167000 | 100 | 4@10V | 60@10V | 0.9 | 60 | 4000@50V | 3.4@10V|4.2@6V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP35R12W2T4PB11BPSA1
Trans IGBT Module N-CH 1200V 35A 23-Pin EASY2B-2 Tray
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Bestand
18
Von 41,9134 € bis 46,82 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 35 | Tray | 23 | EASY2B-2 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC019N04LSATMA1
Trans MOSFET N-CH 40V 28A 8-Pin TDSON T/R
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Bestand
5.212
Von 0,3385 € bis 0,5897 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 50 | 2 | 3000 | 28 | 1.9@10V | 21@4.5V|41@10V | 41 | 2900@20V | 1.5@10V|1.9@4.5V | Tape and Reel | 8 | TDSON | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ60T022S7XTMA1
Trans MOSFET N-CH 600V 90A 22-Pin HDSOP EP T/R
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Bestand
10
Von 5,5972 € bis 3,331 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Gate Octal Source Eleven Drain | Enhancement | 1 | 600 | 20 | 416000 | 90 | 22@12V | 150@12V | 5640@300V | 22 | HDSOP EP | SO | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF2MR12KM1HHPSA1
Trans MOSFET N-CH SiC 1.2KV 290A 7-Pin Tray
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Bestand
1
344,775 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Dual | Enhancement | 2 | 1200 | 20 | 290 | 1.96(Typ)@18V | 1200@18V | 36300@800V | 7 | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZ120R350M1HXKSA1
Trans MOSFET N-CH SiC 1.2KV 4.7A 4-Pin(4+Tab) TO-247 Tube
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Bestand
139
Von 2,2375 € bis 0,895 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 1200 | 23 | 62 | 5.7 | 60000 | 4.7 | 468@18V | 5.3@18V | 182@800V | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPZ65R019C7XKSA1
Trans MOSFET N-CH 650V 75A 4-Pin(4+Tab) TO-247 Tube
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Bestand
230
Von 12,206 € bis 14,4261 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 62 | 4 | 446000 | 75 | 19@10V | 215@10V | 215 | 9900@400V | 17@10V | Tube | 4 | TO-247 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUS300N10S5N015TATMA1
Trans MOSFET N-CH 100V 350A 16-Pin HDSOP EP T/R Automotive AEC-Q101
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Bestand
1.088
Von 3,1945 € bis 5,1312 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Octal Drain Seven Source | Enhancement | 1 | 100 | ±20 | 3.8 | 375000 | 350 | 1.5@10V | 166@10V | 166 | 12316@50V | Tape and Reel | 16 | HDSOP EP | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFR3710ZTRL
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
4.855
Von 1,0755 € bis 1,5635 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 140000 | 56 | 18@10V | 69@10V | 69 | 2930@25V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBF170R650M1XTMA1
Trans MOSFET N-CH SiC 1.7KV 7.4A 8-Pin(7+Tab) D2PAK T/R
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Bestand
6.504
Von 4,8461 € bis 5,0016 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1700 | 15 | 62 | 5.7 | 88000 | 7.4 | 580@15V | 8@12V | 1.1 | 422@1000V | 8 | D2PAK | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1104PBF
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
23
0,6041 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 170000 | 100 | 9@10V | 93(Max)@10V | 0.9 | 93(Max) | 2900@25V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF4905STRL
Trans MOSFET P-CH Si 55V 70A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
493
5,2521 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 55 | ±20 | 4 | 170000 | 70 | 20@10V | 120@10V | 120 | 3500@25V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP10R12W1T4BOMA1
Trans IGBT Module N-CH 1200V 20A 105W 20-Pin EASY1B-1 Tray
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Bestand
21
27,6428 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Array 7 | ±20 | 1200 | 20 | 105 | Tray | 20 | EASY1B-1 | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPZA60R037CM8XKSA1
Trans MOSFET N-CH 600V 64A 4-Pin(4+Tab) TO-247 Tube
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Bestand
97
Von 3,6558 € bis 3,8786 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 600 | 20 | 329000 | 64 | 37@10V | 79@10V | 3458@400V | 4 | TO-247 | TO | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA50R950CEXKSA2
Trans MOSFET N-CH 500V 6.6A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
28.634
Von 0,2222 € bis 0,7036 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | 20 | 80 | 3.5 | 25700 | 6.6 | 950@13V | 10.5@10V | 10.5 | 231@100V | 860@13V | Tube | 3 | TO-220FP | TO | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF7669L2TR
Trans MOSFET N-CH Si 100V 19A 15-Pin Direct-FET L8 T/R Automotive AEC-Q101
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Bestand
3.980
Von 4,6457 € bis 5,1986 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Octal Source Dual Drain | Enhancement | 1 | 100 | ±20 | 5 | 3300 | 19 | 4.4@10V | 81@10V | 81 | 5660@25V | 3.5@10V | Tape and Reel | 15 | Direct-FET L8 | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP620FH7764XTSA1
Trans RF BJT NPN 2.3V 0.08A 185mW Automotive AEC-Q101 4-Pin TSFP T/R
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Bestand
3.000
0,165 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | SiGe | Single Dual Emitter | 2.3 | 7.5 | 1 | 1.2 | 0.08 | 2V/50mA | 185 | 50 to 120 | 110@50mA@1.5V | 0.12 | 21 | 14(Typ) | 25 | 65000(Typ) | 1.3(Min) | Tape and Reel | 4 | TSFP | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |