Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPP65R125C7XKSA1
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220 Tube
|
Bestand
500
Von 1,9621 € bis 3,855 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 4 | 18 | 125@10V | 35@10V | 62 | 35 | 101000 | 1670@400V | 111@10V | Tube | 3 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF5210STRL
Trans MOSFET P-CH Si 100V 38A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Bestand
6
3,9069 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 38 | 60@10V | 150@10V | 150 | 3100 | 2780@25V | Tape and Reel | 3 | D2PAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS16WH6327XTSA1
Diode Switching Si 85V 0.25A 3-Pin SOT-323 T/R Automotive AEC-Q101
|
Bestand
27.582
Von 0,2315 € bis 0,2318 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Switching Diode | Si | Single | 85 | 0.25 | 4.5 | 1.25@0.15A | 1@75V | 4 | 250 | Tape and Reel | 3 | SOT-323 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAN60R180P7SXKSA1
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
500
Von 0,7243 € bis 1,8966 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4 | 18 | 180@10V | 25@10V | 25 | 26000 | 1081@400V | 145@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB6U50N16W1RPB11BPSA1 Trans IGBT Module N-CH 1200V 50A 26-Pin Tray |
Bestand
300
5,8076 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Single | ±20 | 1200 | 50 | Tray | 26 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD100N04S402ATMA1
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
Bestand
12.500
Von 0,5862 € bis 0,5889 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 100 | 2@10V | 91@10V | 1 | 91 | 150000 | 7250@25V | 1.7@10V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW30N110R3FKSA1
Trans IGBT Chip N-CH 1100V 60A 333W 3-Pin(3+Tab) TO-247 Tube
|
Bestand
57
1,8798 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1100 | 60 | 333 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS159NH6906XTSA1
Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Bestand
79.080
Von 0,2031 € bis 0,8991 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Small Signal | N | Single | Depletion | 1 | 60 | ±20 | 0.23 | 3500@10V | 1.4@5V | 360 | 29@25V | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPA60R180P7SXKSA1
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
350
Von 0,754 € bis 0,8192 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4 | 18 | 180@10V | 25@10V | 62 | 25 | 26000 | 1081@400V | 145@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP180N10N3GXKSA1
Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-220 Tube
|
Bestand
966
0,351 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 3.5 | 43 | 18@10V | 19@10V | 19 | 71000 | 1350@50V | Tube | 3 | TO-220 | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKP20N60TXKSA1
Trans IGBT Chip N-CH 600V 40A 166W 3-Pin(3+Tab) TO-220AB Tube
|
Bestand
355
Von 1,0427 € bis 2,2917 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 40 | 166 | Tube | 3 | TO-220AB | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPD90N06S405ATMA2
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
Bestand
2.500
0,5357 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 90 | 5.1@10V | 81@10V | 81 | 107000 | 5000@25V | 4.2@10V | Tape and Reel | 3 | DPAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPQC60T022S7AXTMA1
Trans MOSFET N-CH 600V 90A 22-Pin HDSOP EP T/R Automotive AEC-Q101
|
Bestand
5
3,1334 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Gate Octal Source Eleven Drain | Enhancement | 1 | 600 | 20 | 90 | 22@12V | 150@12V | 416000 | 5640@300V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA65R060M2HXKSA1
Trans MOSFET N-CH SiC 650V 32.8A Automotive 4-Pin(4+Tab) TO-247 Tube
|
Bestand
240
Von 2,9922 € bis 3,9607 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 23 | 32.8 | 73@18V | 19@18V | 130000 | 669@400V | Tube | 4 | TO-247 | TO | Unknown | Yes | Unknown | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW75N120CH7XKSA1
Trans IGBT Chip N-CH 1200V 92A 549W 3-Pin(3+Tab) TO-247 Tube
|
Bestand
93
Von 3,3638 € bis 3,848 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1200 | 92 | 549 | Tube | 3 | TO-247 | TO | No | Unknown | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD90P04P405ATMA2
Trans MOSFET P-CH 40V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
Bestand
12.994
Von 0,6495 € bis 1,1574 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 40 | ±20 | 4 | 90 | 4.7@10V | 118@10V | 1.2 | 118 | 125000 | 7900@25V | 3.5@10V | Tape and Reel | 3 | DPAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF200R33KF2CNOSA1
Trans IGBT Module N-CH 3300V 330A 2200W 10-Pin IHV73-3 Tray
|
Bestand
6
897,0911 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 3300 | 330 | 2200 | Tray | 10 | IHV73-3 | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISK057N04LM6ATSA1 Trans MOSFET N-CH 40V 15A 6-Pin VSON EP T/R |
Bestand
35
Von 0,214 € bis 0,227 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 40 | 20 | 2.3 | 15 | 5.75@10V | 4.7@4.5V|9.7@10V | 60 | 3.2 | 9.7 | 2100 | 220 | 670@20V | 5.1@10V|6.9@4.5V | 6 | VSON EP | SON | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC104N12LM6ATMA1
Trans MOSFET N-CH 120V 11A 8-Pin TDSON EP T/R
|
Bestand
9.292
Von 0,7238 € bis 0,725 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 120 | 20 | 11 | 10.4@10V | 10.4@4.5V|19.6@10V | 19.6 | 3000 | 1400@60V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ65R099CFD7AXTMA1
Trans MOSFET N-CH 650V 29A 22-Pin HDSOP EP T/R Automotive AEC-Q101
|
Bestand
750
Von 2,0241 € bis 1,0512 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Ten Source Eleven Drain | Enhancement | 1 | 650 | 20 | 29 | 99@10V | 39@10V | 39 | 186000 | 1942@400V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Yes | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ033NE2LS5ATMA1
Trans MOSFET N-CH 25V 18A 8-Pin TSDSON EP T/R
|
Bestand
5.000
Von 0,499 € bis 1,2821 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 25 | 16 | 2 | 18 | 3.3@10V | 6.3@4.5V|13.6@10V | 13.6 | 2100(Typ) | 910@12V | 2.7@10V|3.3@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMDQ75R025M2HXTMA1
Trans MOSFET N-CH SiC 750V 70A 22-Pin HDSOP EP T/R
|
Bestand
696
Von 5,4481 € bis 7,7515 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Ten Source Eleven Drain | Enhancement | 1 | 750 | 23 | 70 | 31@18V | 49@18V | 272000 | 1729@500V | 22 | HDSOP EP | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC160N15NS5ATMA1
Trans MOSFET N-CH 150V 56A 8-Pin TDSON EP T/R
|
Bestand
5.000
0,8727 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | 20 | 4.6 | 56 | 16@10V | 19@10V | 50 | 1.3 | 19 | 96000 | 341 | 1370@75V | 13.7@10V|15.1@8V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IKP30N65H5XKSA1
Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube
|
Bestand
50
Von 0,8783 € bis 0,4815 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 55 | 188 | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF150P221AKMA1
Trans MOSFET N-CH 150V 186A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
85
Von 3,3939 € bis 5,6955 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | 20 | 4.6 | 186 | 4.5@10V | 80@10V | 40 | 80 | 3800 | 6000@75V | 3.6@10V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | Yes | Yes |