Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPL60R095CFD7AUMA1
Trans MOSFET N-CH 600V 25A 4-Pin VSON EP T/R
|
Bestand
327
Von 1,7336 € bis 1,0967 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 600 | 20 | 4.5 | 25 | 95@10V | 51@10V | 51 | 147000 | 2103@400V | 76@10V | Tape and Reel | 4 | VSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFS8407TRL
Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Bestand
800
3,4813 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 250 | 1.8@10V | 150@10V | 150 | 230000 | 7330@25V | 1.4@10V|1.6@10V | HEXFET | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW30N65R6XKSA1
Reverse-Conducting IGBT with Monolithic Body Diode
|
Bestand
226
Von 1,1705 € bis 2,5483 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | 3 | TO-247 | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R160C6ATMA1
Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
4.000
1,3862 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 3.5 | 23.8 | 160@10V | 75@10V | 62 | 75 | 176000 | 1660@100V | 140@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLHS6242TRPBF
Trans MOSFET N-CH 20V 10A 6-Pin PQFN EP T/R
|
Bestand
4.071
Von 0,0705 € bis 0,2623 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 20 | ±12 | 10 | 11.7@4.5V | 14@4.5V | 1980 | 1110@10V | 9.4@4.5V|12.4@2.5V | Tape and Reel | 6 | PQFN EP | QFN | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPB200N15N3GATMA1
Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
1.806
Von 1,3476 € bis 3,153 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | ±20 | 4 | 50 | 20@10V | 23@10V | 75 | 1 | 23 | 150000 | 214 | 1820@75V | 16@8V|16@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF17MR12W1M1HB11BPSA1
Trans MOSFET N-CH SiC 1.2KV 50A 18-Pin Tray
|
Bestand
3
41,2915 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Dual | Enhancement | 2 | 1200 | 20 | 50 | 16.2(Typ)@18V | 149@18V | 4400@800V | Tray | 18 | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP7537PBF
Trans MOSFET N-CH 60V 172A 3-Pin(3+Tab) TO-247AC Tube
|
Bestand
275
Von 0,9771 € bis 1,0759 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 3.7 | 172 | 3.3@10V | 142@10V | 142 | 230000 | 7020@25V | 2.75@10V|3.5@6V | Tube | 3 | TO-247AC | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW120R350M1HXKSA1
Trans MOSFET N-CH SiC 1.2KV 4.7A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
72
4,4142 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1200 | 18 | 5.7 | 4.7 | 468@18V | 5.3@18V | 62 | 2.5 | 60000 | 10 | 182@800V | 350@18V|450@15V | Tube | 3 | TO-247 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R145CFD7ATMA1
Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) DPAK T/R
|
Bestand
2.690
Von 1,3787 € bis 1,84 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4.5 | 16 | 145@10V | 31@10V | 31 | 83000 | 1330@400V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRFZ34NSTRLPBF
Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
30.402
Von 0,4381 € bis 0,8787 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 29 | 40@10V | 34(Max)@10V | 40 | 2.2 | 34(Max) | 3800 | 240 | 700@25V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPW15N60C3FKSA1
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
240
Von 1,4276 € bis 0,478 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 3.9 | 15 | 280@10V | 63@10V | 62 | 0.8 | 63 | 156000 | 1660@25V | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPP15P10PLHXKSA1
Trans MOSFET P-CH 100V 15A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
|
Bestand
803
Von 0,9848 € bis 2,2201 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 15 | 200@10V | 47@10V | 47 | 128000 | 1120@25V | 140@10V|190@4.5V | Tube | 3 | TO-220 | TO | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLL024ZTRPBF
Trans MOSFET N-CH Si 55V 5A 4-Pin(3+Tab) SOT-223 T/R
|
Bestand
20.008
0,1026 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Dual Drain | Enhancement | 1 | 55 | ±16 | 3 | 5 | 60@10V | 7@5V | 120 | 2800 | 220 | 380@25V | 48@10V | Tape and Reel | 4 | SOT-223 | SOT | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG65R050M2HXTMA1
Trans MOSFET N-CH SiC 650V 41A 8-Pin(7+Tab) D2PAK T/R
|
Bestand
1
1,4711 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 650 | 23 | 41 | 62@18V | 22@18V | 172000 | 790@400V | Tape and Reel | 8 | D2PAK | TO | Unknown | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMWH170R650M1XKSA1
Trans MOSFET N-CH SiC 1.7KV 7.5A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
193
Von 2,3306 € bis 2,5034 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1700 | 20 | 7.5 | 580@15V | 8.1@12V | 88000 | 337@1000V | 3 | TO-247 | TO | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUT200N08S5N023ATMA1
Trans MOSFET N-CH 80V 200A 9-Pin(8+Tab) HSOF T/R Automotive AEC-Q101
|
Bestand
1.800
1,3942 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 80 | ±20 | 3.8 | 200 | 2.3@10V | 85@10V | 0.7 | 85 | 200000 | 5900@40V | 1.8@10V|2.7@10V | Tape and Reel | 9 | HSOF | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD65R950C6ATMA1
Trans MOSFET N-CH 700V 4.5A 3-Pin(2+Tab) DPAK T/R
|
Bestand
220
Von 0,4043 € bis 1,0539 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | 20 | 3.5 | 4.5 | 950@10V | 15.3@10V | 62 | 3.4 | 15.3 | 37000 | 328@100V | 855@10V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKQ75N120CH3XKSA1
Trans IGBT Chip N-CH 1200V 150A 938W 3-Pin(3+Tab) TO-247 Tube
|
Bestand
25
Von 6,8524 € bis 11,2057 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1200 | 150 | 938 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0923NDIATMA1
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R
|
Bestand
5.000
0,322 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 30 | ±20 | 2 | 17@Q1|32@Q2 | 5@10V@Q1|2.8@10V@Q2 | 6.7@4.5V@Q1|12@4.5V@Q2 | 2500 | 870@15V@Q1|1500@15V@Q2 | Tape and Reel | 8 | TISON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP420FH6327XTSA1
Trans RF BJT NPN 4.5V 0.06A 210mW 4-Pin TSFP T/R
|
Bestand
13
0,1388 €
pro Stück
|
Infineon Technologies AG | HF-BJT | NPN | Si | Single Dual Emitter | 4.5 | 1 | 15 | 1.5 | 0.06 | 4V/40mA | 50 to 120 | 60@5mA@4V | 0.55 | 210 | 0.15 | 17(Typ) | 37(Max) | 28 | 25000(Typ) | 2.3(Min) | Tape and Reel | 4 | TSFP | No | Yes | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD89N18KHPSA1
Diode 1.8KV 89A 3-Pin PB20-1 Tray
|
Bestand
11
86,6775 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Dual Series | 1800 | 89 | 2800 | 1.5@300A | 20000 | Tray | 3 | PB20-1 | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFR5305TRL
Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
Bestand
50
Von 1,2042 € bis 1,2655 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 55 | ±20 | 4 | 31 | 65@10V | 63(Max)@10V | 110 | 1.4 | 63(Max) | 110000 | 520 | 1200@25V | Tape and Reel | Unknown | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPD80R1K0CEATMA1
Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R
|
Bestand
2.500
0,4817 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 800 | 20 | 3.9 | 5.7 | 950@10V | 31@10V | 62 | 1.5 | 31 | 83000 | 785@100V | 800@10V | Tape and Reel | 3 | DPAK | TO | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12N3T7BPSA1 | EconoPIM 3 TRENCHSTOP IGBT7
Trans IGBT Module N-CH 1200V 150A 35-Pin Tray
|
Bestand
7
Von 78,5785 € bis 38,2853 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | Trench Stop | N | Hex | ±20 | 1200 | 150 | Tray | 35 | No | No | No | No | EAR99 | Yes | Yes |