Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Material | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Diode Type | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Mode of Operation | Typical Input Resistance - (kOhm) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Typical Carrier Life Time - (us) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BSC018NE2LSIATMA1
Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP T/R
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Bestand
10.411
0,4744 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 25 | 29 | ±20 | 2 | 1.8@10V | 17@4.5V|36@10V | 36 | 2500@12V | 1.5@10V|1.9@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP520FH6327XTSA1
Trans RF BJT NPN 2.5V 0.05A 120mW 4-Pin TSFP T/R Automotive AEC-Q101
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Bestand
331
0,1164 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | Si | Single Dual Emitter | 1 | 2.5 | 10 | 120 | 1 | 0.05 | 2V/20mA | 50 to 120 | 70@20mA@2V | 0.31 | 45000(Typ) | 0.07 | 10.5(Typ) | 22.5 | 23.5 | Tape and Reel | 4 | TSFP | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN70R750P7SATMA1
Trans MOSFET N-CH 700V 6.5A 3-Pin(2+Tab) SOT-223 T/R
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Bestand
3.000
0,1857 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 6700 | 700 | 6.5 | 16 | 160 | 3.5 | 750@10V | 8.3@10V | 8.3 | 306@400V | 620@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR7833TRLPBF
Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.800
1,4081 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 140000 | 30 | 140 | ±20 | 4.5@10V | 33@4.5V | 4010@15V | 3.6@10V|4.4@4.5V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5305STRLPBF
Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
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Bestand
54.892
Von 0,5922 € bis 0,8803 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 3800 | 55 | 31 | ±20 | 40 | 4 | 60@10V | 63(Max)@10V | 1.4 | 63(Max) | 520 | 1200@25V | Tape and Reel | Unknown | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS7007WH6327XTSA1
Diode Schottky Si 0.07A 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101
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Bestand
24.000
Von 0,0797 € bis 0,0864 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Dual Parallel | 0.07 | 0.1 | 250 | 1@0.015A | 0.1@50V | 2 | Tape and Reel | 4 | SOT-343 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDK02G65C5XTMA2
Diode Schottky 650V 2A 3-Pin(2+Tab) D2PAK T/R
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Bestand
990
Von 0,6479 € bis 1,9091 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 650 | 2 | 23 | 36000 | 1.8 | 35 | 70(Typ) | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD92N16KOFHPSA1
SCR Module 1600V 160A(RMS) 2050A 5-Pin PB20-1 Tray
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Bestand
3
101,069 €
pro Stück
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Infineon Technologies AG | SCR Modules | 150 | 1000 | 1.4 | 1.73@300A | 120 | 102 | 200 | 1600 | 1600 | 160 | 50 | 5 | PB20-1 | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPZ60R017C7XKSA1
Trans MOSFET N-CH 600V 109A 4-Pin(4+Tab) TO-247 Tube
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Bestand
91
Von 10,0131 € bis 3,6324 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 446000 | 600 | 109 | 20 | 62 | 4 | 17@10V | 240@10V | 240 | 9890@400V | 15@10V | Tube | 4 | TO-247 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP50R250CPXKSA1
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
6.500
Von 0,6402 € bis 0,7288 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 114000 | 500 | 13 | ±20 | 62 | 3.5 | 250@10V | 27@10V | 1.1 | 27 | 1420@100V | Tube | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBT3906SH6327XTSA1
Trans GP BJT PNP 40V 0.2A 330mW 6-Pin SOT-363 T/R Automotive AEC-Q101
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Bestand
9.000
Von 0,0397 € bis 0,0406 €
pro Stück
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Infineon Technologies AG | GP BJT | PNP | Si | Bipolar Small Signal | Dual | 2 | 40 | 0.85@1mA@10mA|0.95@5mA@50mA | 40 | 330 | 6 | 0.2 | 30 to 50|50 to 120 | 60@100uA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | 0.25@1mA@10mA|0.4@5mA@50mA | Tape and Reel | 6 | SOT-363 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC027N10NS5ATMA1
Trans MOSFET N-CH 100V 23A 8-Pin TSON EP T/R
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Bestand
10.000
1,9543 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 3000 | 100 | 23 | 20 | 3.8 | 2.7@10V | 89@10V | 89 | 6300@50V | 2.1@10V|2.6@6V | Tape and Reel | 8 | TSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKWH60N67PR7XKSA1
Reverse Conducting IGBT for boost PFC stage
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Bestand
230
Von 1,2422 € bis 1,4288 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Tube | 3 | TO-247 | TO | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPG20N06S2L65ATMA1
Trans MOSFET N-CH 55V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
5.000
0,3283 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 43000 | 55 | 20 | ±20 | 2 | 65@10V | 9.4@10V | 9.4 | 315@25V | 53@10V|67@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138IXTSA1
Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R
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Bestand
27.000
Von 0,0287 € bis 0,0401 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 360 | 60 | 0.23 | 20 | 3500@10V | 1@10V | 1 | 32@25V | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA041N04NGXKSA1
Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
850
0,497 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 35000 | 40 | 70 | 20 | 62 | 4 | 4.1@10V | 56@10V | 56 | 3400@20V | 3.5@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH02G120C5XKSA1
Diode Schottky SiC 1.2KV 11.8A 2-Pin(2+Tab) TO-220 Tube
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Bestand
474
1,0677 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 1200 | 11.8 | 37 | 75000 | 1.65@2A | 18 | Tube | 2 | TO-220 | TO | Yes | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF900R12IE4BOSA1
Trans IGBT Module N-CH 1200V 900A 5100W 10-Pin PRIME2-1 Tray
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Bestand
3
395,6896 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1200 | 900 | 5100 | Tray | 10 | PRIME2-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA120R026M2HXKSA1
Trans MOSFET N-CH SiC 1.2KV 69A Automotive Tube
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Bestand
231
Von 6,427 € bis 9,0055 €
pro Stück
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Infineon Technologies AG | MOSFETs | SiC | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 289000 | 1200 | 69 | 23 | 34@18V | 60@18V | 1990@800V | Tube | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGB110S101XTMA1
Trans MOSFET N-CH GaN 100V 9A 4-Pin VSON EP T/R
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Bestand
4.884
Von 0,5827 € bis 0,8168 €
pro Stück
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Infineon Technologies AG | MOSFETs | GaN | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 2500 | 100 | 9 | 5.5 | 11@5V | 3.4@5V | 300@50V | 4 | VSON EP | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP65R099CFD7AAKSA1
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
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Bestand
500
Von 2,62 € bis 4,7857 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 127000 | 650 | 24 | 20 | 4.5 | 99@10V | 53@10V | 53 | 2513@400V | Tube | 3 | TO-220 | TO | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGC025S08S1XTMA1
Trans MOSFET N-CH GaN 80V 23A 6-Pin TSON T/R
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Bestand
50
Von 2,0162 € bis 2,6364 €
pro Stück
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Infineon Technologies AG | MOSFETs | GaN | Power MOSFET | N | Single Dual Drain Triple Source | Enhancement | 1 | 3300 | 80 | 23 | 5.5 | 2.5@5V | 12@5V | 1250@40V | 6 | TSON | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDM02G120C5XTMA1
Diode Schottky SiC 1.2KV 14A 3-Pin(2+Tab) DPAK T/R
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Bestand
1.705
Von 0,6106 € bis 1,0801 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 1200 | 14 | 37 | 98000 | 1.65@2A | 18 | 62K/W | 182(Typ) | 1.5K/W | Tape and Reel | 3 | DPAK | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ0994NSATMA1
Trans MOSFET N-CH 30V 13A 8-Pin TSDSON EP T/R
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Bestand
5.000
0,2355 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2100 | 30 | 13 | 20 | 2 | 7@10V | 5.2@4.5V|10@10V | 10 | 670@15V | 5@10V|7@4.5V | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR6306E6327HTSA1
Diode PIN Switch 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R
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Bestand
18.000
0,0839 €
pro Stück
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Infineon Technologies AG | PIN | Switch | SHF | 50 | Dual Common Anode | 100 | 1(Typ)@10mA | 250 | 2@5mA | 0.01 | 1.2 | 0.3@5V | 0.075 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |