IXYS Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Mode of Operation | Maximum Holding Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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DH20-18A
Diode Switching 1.8KV 20A 2-Pin(2+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Switching Diode | Single | 1800 | 20 | 150 | 2.83@40A | 50 | 300(Typ) | Tube | 2 | TO-247AD | TO | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
IXTT170N10P
Trans MOSFET N-CH 100V 170A 3-Pin(2+Tab) TO-268
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 170 | 9@10V | 198@10V | 198 | 715000 | 6000@25V | 3 | TO-268 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||
IXFX120N25P
Trans MOSFET N-CH 250V 120A 3-Pin(3+Tab) PLUS 247
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 250 | ±20 | 120 | 24@10V | 185@10V | 185 | 700000 | 8700@25V | 3 | PLUS 247 | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
IXGA30N120B3
Trans IGBT Chip N-CH 1200V 60A 300W 3-Pin(2+Tab) D2PAK
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IXYS | IGBT-Chip | N | Single | ±20 | 1200 | 60 | 300 | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||
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DSEI60-06A
Diode Switching 600V 60A 2-Pin(2+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Switching Diode | Single | 600 | 60 | 600 | 1.8@16A | 200 | 50 | 2 | TO-247AD | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||
DSEI2X101-12A
Diode Switching 1.2KV 99A 4-Pin SOT-227B Tube
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IXYS | Gleichrichter | Switching Diode | Dual Parallel | 1200 | 99 | 900 | 1.87@100A | 3000 | 150(Typ) | 4 | SOT-227B | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |