NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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AFV10700HSR5
Trans RF MOSFET N-CH 105V 5-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 105 | 10 | 2.3 | 526000 | 960 | 700(Typ) | 19.2 | Tape and Reel | 5 | NI-780S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX600GSR5
Trans RF MOSFET N-CH 179V 5-Pin NI-780GS T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | Pulsed CW | 179 | 10 | 1333000 | 299@65V | 1.8 | 680(Typ) | 26.4 | Tape and Reel | 5 | NI-780GS | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX600HSR5
Trans RF MOSFET N-CH 179V 5-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | Pulsed CW | 179 | 10 | 1333000 | 299@65V | 1.8 | 680(Typ) | 26.4 | Tape and Reel | 5 | NI-780S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BFG410W,115
Trans RF BJT NPN 4.5V 0.012A 54mW 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 4.5 | 1 | 10 | 1 | 0.012 | 2V/10mA | 50 to 120 | 50@10mA@2V | 54 | 5(Typ) | 21 | 15 | 22000(Typ) | 1.2(Typ) | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
MRFE6VP5600HR5
Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
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Von 190,4165 € bis 196,5483 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 130 | 10 | 1667000 | 342@50V | 1.8 | 600(Typ) | 25 | Tape and Reel | 5 | Case 375D-05 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gekauft
MRFE6VP6300HR5
Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R
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163,1099 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 130 | 10 | 1050000 | 188@50V | 1.8 | 300(Typ) | 26.5 | Tape and Reel | 5 | NI-780 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
MRFE8VP8600HR5
Trans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R
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166,0803 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | OFDM | 115 | 10 | 2.3 | 1250000 | 452@50V | 470 | 140(Typ) | 21 | Tape and Reel | 5 | NI-1230H | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1005HR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW|Pulsed RF | 120 | 10 | 2.7 | 476000 | 340@50V | 250(Typ) | 20|22.7 | Tape and Reel | 3 | NI-780 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BB145B,115
Diode VAR Cap Single 8V 6.4pF 2-Pin SOD-523 T/R
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Von 0,1075 € bis 0,1113 €
pro Stück
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NXP Semiconductors | Varaktors | VCO | Single | 8 | 0.01 | 2.2 | 1V/4V | 6.4@1V | Tape and Reel | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S19100NR1
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | 2-Carrier N-CDMA | 68 | ±12 | 287000 | 1930 | 100 | 14.5 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA312B-600B,118
TRIAC 600V 12A(RMS) 110A 3-Pin(2+Tab) D2PAK T/R
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NXP Semiconductors | TRIACs | 100 | 2000(Typ) | 0.5 | 1 | 50 | 60 | 600 | 1.6@15A | 600 | 12 | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NXPSC20650WQ Diode 650V 20A 3-Pin(3+Tab) TO-247 |
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NXP Semiconductors | Gleichrichter | 3 | TO-247 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG2010AEB/DG,115
Diode Schottky 1A 2-Pin SC-79 T/R
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NXP Semiconductors | Gleichrichter | 2 | SC-79 | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT258-500R,127
Thyristor SCR 500V 82A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 0.5 | 1.5 | 0.2 | 6 | 500 | 5 | 1.6@16A | 500 | 5 | Tube | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S21170HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 2110 | 170 | 16 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ACT108-600D,126
TRIAC 600V 8.8A 3-Pin TO-92 Ammo
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NXP Semiconductors | TRIACs | 50 | 300(Min) | 0.002 | 0.9 | 5 | 20 | 600 | 1.3@1.1A | 600 | Ammo | 3 | TO-92 | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBLS4005V,115
Trans Digital BJT NPN/PNP 50V 0.1A/0.5A 300mW 6-Pin SOT-666 T/R Automotive AEC-Q101
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NXP Semiconductors | Digital-BJT | NPN|PNP | Dual | 50@NPN|40@PNP | 47@NPN | 1.2@50mA@500mA@PNP | 1@NPN | 0.1@NPN|0.5@PNP | 80@5mA@5V@NPN|40@500mA@2V|150@100mA@2V|200@10mA@2V@PNP | 300 | 0.15@0.5mA@10mA@NPN|0.05@0.5mA@10mA|0.13@5mA@100mA|0.2@10mA@200mA|0.35@50mA@500mA@PNP | Tape and Reel | 6 | SOT-666 | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PVR100AD-B2V5,115
Integrated Zener Diode and NPN Bipolar Transistor 6-Pin TSOP T/R
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NXP Semiconductors | Diskrete, Verschiedenes | 6 | TSOP | SO | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT131-800D,112
TRIAC 800V 13.7A 3-Pin TO-92 Bulk
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NXP Semiconductors | TRIACs | 0.5 | 1 | 7 | 10 | 800 | 1.5@1.4A | 800 | Bulk | 3 | TO-92 | No | Unknown | Unknown | Unknown | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA312-600B/DG,127
TRIAC 600V 12A(RMS) 110A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 100 | 2000(Typ) | 0.5 | 1 | 50 | 60 | 600 | 1.6@15A | 600 | 12 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R2-25YLC,115
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 25 | 20 | 100 | 3.4@10V | 30@10V|14@4.5V|26@10V | 26|30 | 79000 | 1781@12V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU530R
Trans RF BJT NPN 16V 0.065A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 1 | 30 | 3 | 0.065 | 8V/15mA | 50 to 120 | 60@10mA@8V | 0.93 | 450 | 0.65 | 10(Typ) | 26 | 19.5 | 11000(Typ) | 1.1(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T21H450W23SR6 Trans RF MOSFET N-CH 65V 6-Pin T/R |
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 2110 | 87(Typ) | 15.4 | 6 | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT169B,126
SCR Diode 200V 0.8A(RMS) 9A 3-Pin SPT Ammo
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 50 | 800(Typ) | 0.1 | 0.8 | 0.2 | 5 | 200 | 5 | 1.7@1.2A | 200 | 0.5 | 0.8 | Ammo | 3 | SPT | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S18120HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 65 | 10 | 1805 | 72(Typ) | 18.2 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No |