NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRFE6VP5600HSR5
Trans RF MOSFET N-CH 130V 5-Pin NI-1230S T/R
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193,9173 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 130 | 10 | 1667000 | 342@50V | 1.8 | 600(Typ) | 25 | Tape and Reel | 5 | NI-1230S | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V14300HR5
Trans RF MOSFET N-CH 100V 3-Pin NI-780 T/R
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477,3275 €
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 100 | 10 | 2.4 | 330@50V | 1200 | 330(Typ) | 18 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S21140HR3
Trans RF FET N-CH 68V 3-Pin NI-880 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA|CDMA|TDMA | 68 | 12 | 2110 | 140 | 15.5 | Tape and Reel | 3 | NI-880 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AFV121KHSR5
Trans RF MOSFET N-CH 112V 5-Pin NI-1230S T/R
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Von 668,5064 € bis 803,4954 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 112 | 10 | 2.3 | 960 | 1410(Typ) | 19.6 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFV121KGSR5 Trans RF MOSFET N-CH 112V 5-Pin NI-1230S T/R |
666,8425 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 112 | 10 | 2.3 | 960 | 1410(Typ) | 19.6 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFV10700HR5
Trans RF MOSFET N-CH 105V 5-Pin NI-780 T/R
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Von 541,7153 € bis 651,0966 €
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 105 | 10 | 2.3 | 526000 | 960 | 700(Typ) | 19.2 | Tape and Reel | 5 | NI-780 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A2T14H450-23NR6
Trans RF MOSFET N-CH 65V 7-Pin FMF T/R
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Von 118,7491 € bis 142,7277 €
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 2.2 | 1452 | 93(Typ) | 19 | Tape and Reel | 7 | FMF | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1004GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
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Von 26,7604 € bis 32,1592 €
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|2-Carrier W-CDMA|2-Tone|GSM EDGE | 68 | 12 | 3.5 | 120@28V | 1600 | 10(Typ) | 15.5|16 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1007HSR5
Trans RF MOSFET N-CH 110V 5-Pin NI-1230S T/R
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Von 732,5475 € bis 880,4575 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 110 | 10 | 2.4 | 539@50V | 900 | 1000(Typ) | 21.4 | Tape and Reel | 5 | NI-1230S | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1305HSR5
Trans RF MOSFET N-CH 133V 5-Pin NI-780S T/R
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Von 127,857 € bis 131,9733 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 133 | 10 | 2.6 | 73.6@50V | 1.8 | 100(Typ) | 26 | Tape and Reel | 5 | NI-780S | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1317HSR5
Trans RF MOSFET N-CH 105V 5-Pin NI-1230S T/R
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940,9196 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 105 | 10 | 2.3 | 869000 | 1020 | 1300(Typ) | 18.2 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1317HR5
Trans RF MOSFET N-CH 105V 5-Pin NI-1230H T/R
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956,4489 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 105 | 10 | 2.3 | 869000 | 1020 | 1300(Typ) | 18.2 | Tape and Reel | 5 | NI-1230H | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF5014HR5
Trans RF MOSFET 125V Medical 3-Pin NI-360H-2SB T/R
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492,9002 €
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NXP Semiconductors | HF-MOSFETs | GaN | Single | Enhancement | 1 | CW | 125 | 0 | 2.3 | 232000 | 51@50V | 1 | 125(Typ) | 18 | Tape and Reel | 3 | NI-360H-2SB | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V12250HSR5
Trans RF MOSFET N-CH 100V 3-Pin NI-780S T/R
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305,517 €
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 100 | 10 | 960 | 275(Typ) | 20.3 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S7170NR3
Trans RF MOSFET N-CH 70V 3-Pin Case 2021-03 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 618 | 50(Typ) | 19.5 | Tape and Reel | 3 | Case 2021-03 | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP100HR5
Trans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R
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148,8805 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 2-Tone|CW | 133 | 10 | 2.6 | 73.6@50V | 1.8 | 100(Typ) | 19|27.2 | Tape and Reel | 5 | Case 465M-01 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRFE6VP100HSR5
Trans RF MOSFET N-CH 133V 5-Pin NI-780S T/R
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Von 139,5993 € bis 144,0969 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 2-Tone|CW | 133 | 10 | 2.6 | 73.6@50V | 1.8 | 100(Typ) | 19|27.2 | Tape and Reel | 5 | NI-780S | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6VP61K25GNR6 RF MOSFET Transistor |
229,0056 €
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NXP Semiconductors | HF-MOSFETs | Pulse | 1.8 | 23 | 5 | Case OM-1230G | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6VP6300GSR5 Broadcast RF Power Transistors |
Von 148,9672 € bis 153,7594 €
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NXP Semiconductors | HF-MOSFETs | 5 | CFM | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP6600GNR3
Trans RF MOSFET N-CH 133V 5-Pin OM-780G EP T/R
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109,5286 €
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | Pulse | 133 | 10 | 290@50V | 1.8 | 600(Typ) | 24.7 | 5 | OM-780G EP | No | Yes | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8VP13350NR5 Trans RF MOSFET N-CH 100V 5-Pin OM-780 EP T/R |
Von 173,3791 € bis 178,9599 €
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | CW | 100 | 10 | 700 | 350 | 20.7 | 5 | OM-780 EP | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PDTC114EU,115
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin SC-70 T/R
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NXP Semiconductors | Digital-BJT | NPN | Single | 50 | 10 | 1 | 0.1 | 30@5mA@5V | 200 | 0.15@0.5mA@10mA | Tape and Reel | 3 | SC-70 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1803A
Trans RF MOSFET 50V 3-Pin(3+Tab) SIL Tube
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18,3458 €
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NXP Semiconductors | HF-MOSFETs | Single | 1 | CW | 50 | 1.8 | 330(Typ) | 28.2 | Tube | 3 | SIL | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54
Diode Schottky 0.2A 3-Pin SOT-23
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 10 | 5 | 500K/W | 250 | 3 | SOT-23 | SOT | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMGD290XN,115
Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 20 | ±12 | 0.86 | 350@4.5V | 0.72@4.5V | 410 | 34@20V | 480nm | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | Yes | No |