NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRFE6VP61K25HSR5
Trans RF MOSFET N-CH 133V 5-Pin NI-1230S T/R
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Bestand
550
258,8789 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW|Pulsed RF | 133 | 10 | 1333000 | 562@50V | 24 | 1.8 | 1300(Typ) | 600 | Tape and Reel | 5 | NI-1230S | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101AN
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220 Tube
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Bestand
1.850
25,841 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 2.7 | 182000 | 149@50V | 21.1 | 1.8 | 115(Typ) | 250 | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V10010NR4
Trans RF MOSFET N-CH 100V 4-Pin PLD-1.5 T/R
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Bestand
300
106,6512 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | 100 | 10 | 2.5 | 9.55@50V | 25 | 960 | 10(Typ) | 1400 | Tape and Reel | 4 | PLD-1.5 | No | Yes | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP5600HR6
Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
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Bestand
75
Von 200,0292 € bis 255,1207 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 130 | 10 | 1667000 | 342@50V | 25 | 1.8 | 600(Typ) | 600 | Tape and Reel | 5 | Case 375D-05 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB202,135
Varactor Diode Single 6V 28.2pF 2-Pin SOD-523 T/R
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Bestand
60.000
Von 0,6942 € bis 0,722 €
pro Stück
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NXP Semiconductors | Varaktors | Tuner|VCO | Single | 6 | 0.01 | 2.5 | 0.2V/2.3V | 28.2@0.2V | Tape and Reel | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A5G26S008NT6
Air Fast RF Power GAN Transistor
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Bestand
5.000
14,6186 €
pro Stück
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NXP Semiconductors | HF-BJT | 2690 | Tape and Reel | 6 | DFN EP | DFN | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9205HSR3
Trans RF FET N-CH 66V 3-Pin NI-880S T/R
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Bestand
1.750
Von 13,7079 € bis 19,1841 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 66 | 12 | 491@28V | 21.2 | 58(Typ) | 1000 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF24301HSR5
Trans RF MOSFET 32V 3-Pin NI-780
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Bestand
22
Von 163,0942 € bis 163,1653 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | Single | 1 | CW | 32 | 13.5 | 2400 | 300 | 2500 | 3 | NI-780 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF300AN-81MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube
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Bestand
2
586,865 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 272000 | 403@50V | 28.2 | 1.8 | 330(Typ) | 250 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gekauft
PMBFJ175,215
Trans JFET P-CH 30V Si 3-Pin TO-236AB T/R
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NXP Semiconductors | JFETs | Si | P | Single | 30 | 30 | 300 | 125000 | 3 | TO-236AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BAP50-03,115
Diode PIN 50V 50mA 2-Pin SOD-323 T/R
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NXP Semiconductors | PIN | Single | 50 | 50 | 5@10mA | 1.1 | 40@0.5mA | 0.1 | 500 | 0.35@5V | Tape and Reel | 2 | SOD-323 | SOD | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1005HR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW|Pulsed RF | 120 | 10 | 2.7 | 476000 | 340@50V | 20|22.7 | 250(Typ) | 1300 | Tape and Reel | 3 | NI-780 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80GNR5
Trans RF MOSFET N-CH 179V 5-Pin Case OM-1230G T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 179 | 10 | 3333000 | 765@65V | 24.4 | 1.8 | 1800(Typ) | 400 | Tape and Reel | 5 | Case OM-1230G | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP5150GNR1
Trans RF MOSFET N-CH 133V 5-Pin TO-270 W GULL T/R
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36,9298 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW|Pulsed RF | 133 | 10 | 2.8 | 952000 | 96.7@50V | 26.1 | 1.8 | 179(Typ) | 600 | Tape and Reel | 5 | TO-270 W GULL | TO | No | No | No | No | 5A991g. | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
AFT09MS031NR1
Trans RF MOSFET N-CH 40V 3-Pin TO-270 T/R
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Von 12,1179 € bis 12,6698 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 40 | 12 | 2.6 | 317000 | 140@13.6V | 17.2 | 764 | 31(Typ) | 941 | Tape and Reel | 3 | TO-270 | TO | No | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT05MS006NT1
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
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Von 2,9703 € bis 2,9946 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 30 | 12 | 2.6 | 125000 | 75@7.5V | 18.3 | 136 | 6(Typ) | 941 | Tape and Reel | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MW6S010NR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R
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21,1077 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone | 68 | 12 | 61400 | 20 | 450 | 10(Typ) | 1500 | Tape and Reel | 3 | TO-270 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1007HR5
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 110 | 10 | 2.4 | 539@50V | 21.4 | 900 | 1000(Typ) | 1215 | Tape and Reel | 5 | NI-1230 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8VP13350NR3
Trans RF MOSFET N-CH 100V Medical 4-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | Pulsed CW | 100 | 10 | 2.3 | 19.2 | 700 | 355(Typ) | 1300 | Tape and Reel | 4 | OM-780 EP | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
MRF6S20010GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|2-Carrier W-CDMA|2-Tone|GSM EDGE|IS-95 | 68 | 12 | 0.12@28V | 15.5 | 1600 | 1(Typ) | 2200 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1318NR1
Trans RF MOSFET 110V 4-Pin TO-270 WB EP T/R
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NXP Semiconductors | HF-MOSFETs | Enhancement | CW | 110 | 10 | 2.4 | 304@50V | 22 | 10 | 300(Typ) | 600 | 4 | TO-270 WB EP | No | Yes | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BAP64-03,115
PIN Diode Attenuator/Switch 175V 100mA Automotive AEC-Q101 2-Pin SOD-323 T/R
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NXP Semiconductors | PIN | Attenuator|Switch | SHF | Single | 175 | 100 | 1.35@100mA | 1.1@50mA | 40@0.5mA | 10 | 500 | 0.35@20V | 1.55 | 2 | SOD-323 | SOD | No | Unknown | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BFU520AR
Trans RF BJT NPN 16V 0.05A 450mW Automotive AEC-Q101 3-Pin TO-236AB T/R
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Von 0,1698 € bis 0,1825 €
pro Stück
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NXP Semiconductors | HF-BJT | NPN | Si | Single | 16 | 30 | 1 | 3 | 0.05 | 8V/10mA | 450 | 50 to 120 | 60@5mA@8V | 0.54 | 24 | 8.5(Typ) | 18 | 10000(Typ) | 1(Min) | Tape and Reel | 3 | TO-236AB | TO | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BFU530AR
Trans RF BJT NPN 16V 0.065A 450mW Automotive 3-Pin TO-236AB T/R
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Von 0,1615 € bis 0,173 €
pro Stück
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NXP Semiconductors | HF-BJT | NPN | Si | Single | 16 | 30 | 1 | 3 | 0.065 | 8V/15mA | 450 | 50 to 120 | 60@10mA@8V | 0.67 | 23.5 | 10.5(Typ) | 20 | 11000(Typ) | 1.1(Min) | Tape and Reel | 3 | TO-236AB | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BAP70-05,215
Diode PIN Attenuator/Switch 50V 100mA Automotive AEC-Q101 3-Pin TO-236AB T/R
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Von 0,1712 € bis 0,1828 €
pro Stück
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NXP Semiconductors | PIN | Attenuator|Switch | Dual Common Cathode | 50 | 100 | 1.9@100mA | 1.1@50mA | 100@0.5mA | 0.1 | 250 | 0.3@20V | 1.25 | 3 | TO-236AB | TO | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No |