NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF8P20160HR3
Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 16.5 | 1880 | 37(Typ) | 2025 | Tape and Reel | 5 | Case 465M-01 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU520XVL
Trans RF BJT NPN 16V 0.05A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.05 | 8V/10mA | 450 | 50 to 120 | 60@5mA@8V | 0.52 | 26 | 9.5(Typ) | 19.5 | 10500(Typ) | 1.1(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101AN-50MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220
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Von 425,4755 € bis 439,1722 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 2.7 | 182000 | 149@50V | 21.1 | 1.8 | 115(Typ) | 250 | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80H-128MHZ
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
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1.641,5217 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | Pulse | 179 | 10 | 2247000 | 760@65V | 25.9 | 1.8 | 1800(Typ) | 400 | 5 | NI-1230H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VS25GNR1
Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R
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35,9919 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone|Pulse|CW | 133 | 10 | 2.5 | 39.2@50V | 25.4 | 1.8 | 25(Typ) | 2000 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | 5A991g. | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09MP055GNR1
Trans RF MOSFET N-CH 40V 5-Pin TO-270 W GULL T/R
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Von 26,3425 € bis 31,6666 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 40 | 12 | 2.6 | 625000 | 690@12.5V | 17.5(Max) | 764 | 57(Typ) | 941 | Tape and Reel | 5 | TO-270 W GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT151-500R,127
SCR 500V 12A(RMS) 132A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 1000(Typ) | 50 | 1.5 | 500 | 15 | 20 | 1.75@23A | 5 | 12 | 500 | 7.5 | 0.5 | Rail | 3 | TO-220AB | TO | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A2G22S190-01SR3
Trans RF MOSFET 125V 3-Pin NI-400S-240 T/R
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NXP Semiconductors | HF-MOSFETs | GaN | 1-Carrier W-CDMA | 125 | 0 | 2.3 | 16.8 | 1800 | 36(Typ) | 2200 | Tape and Reel | 3 | NI-400S-240 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1011HR5
RF Power LDMOS Transistors
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NXP Semiconductors | HF-MOSFETs | 18 | 1200 | 1400 | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T23H450W23SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2300 | 2400 | Tape and Reel | 7 | ACP-1230S-4L2S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2V07H525-04NR6 POWER LDMOS TRANSISTOR 400-2700 MHz, 2.5 W AVG., 28 V |
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NXP Semiconductors | HF-MOSFETs | 595 | 851 | Tape and Reel | 5 | Case OM-1230 L | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3G18H500-04SR3 RF Power GaN FET Transistor |
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NXP Semiconductors | HF-MOSFETs | 1805 | 2200 | Tape and Reel | 5 | CFMF | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6S19100HR3
Trans RF FET N-CH 68V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Carrier N-CDMA|CDMA|TDMA | 68 | 12 | 16.1 | 1930 | 100 | 1990 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S21060NBR1
Trans RF MOSFET N-CH 68V 5-Pin TO-272 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | 2-Carrier W-CDMA|CDMA|TDMA | 68 | 12 | 15.5 | 2110 | 60 | 2170 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT26HW050SR3
Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 14.2 | 2620 | 9(Typ) | 2690 | Tape and Reel | 9 | NI-780-4S4 | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6P24190HR6
Trans RF MOSFET N-CH 68V 5-Pin NI-1230 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 2-Carrier W-CDMA | 68 | 12 | 14 | 190(Typ) | 2450 | Tape and Reel | 5 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6V13250HR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW|Pulsed RF | 120 | 10 | 2.7 | 476000 | 340@50V | 20|22.7 | 960 | 250(Typ) | 1300 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6VP3091NR1
Trans RF MOSFET N-CH 115V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | DVB-T OFDM | 115 | 10 | 591@50V | 22 | 470 | 18(Typ) | 860 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S18170HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 17.5 | 1805 | 170 | 1880 | Tape and Reel | 3 | NI-880 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S19170HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 17.2 | 1930 | 170 | 1990 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S27130HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | BWA|OFDM|WIBRO|WIMAX | 65 | 10 | 326@28V | 16.5 | 2500 | 105 | 2700 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P20100HSR3
Trans RF FET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA|GSM EDGE | 65 | 10 | 16 | 1805 | 20(Typ) | 2025 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P20160HSR3
Trans RF FET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 16.5 | 1880 | 37(Typ) | 2025 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P9300HSR5
Trans RF MOSFET N-CH 70V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 2 | 1-Carrier W-CDMA | 70 | 10 | 19.4 | 860 | 100(Typ) | 960 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S21100HSR3
Trans RF FET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 18.3 | 2110 | 24(Typ) | 2170 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No |