NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BYC8B-600,118
Diode Switching 600V 8A 3-Pin(2+Tab) D2PAK T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 600 | 8 | 60 | 2.9 | 150 | 52 | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84AKM,315
Trans MOSFET P-CH 50V 0.23A 3-Pin DFN T/R Automotive AEC-Q101
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NXP Semiconductors | MOSFETs | Small Signal | P | Single | Enhancement | 1 | 50 | 20 | 360 | 2.1 | 715 | 0.23 | 7500@10V | 0.26@5V | 4.5 | 24@25V | 3um | Tape and Reel | 3 | DFN | DFN | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT20P060-4NR3
Trans RF MOSFET N-CH 65V 5-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 18.9 | 1805 | 6.3(Typ) | 2170 | Tape and Reel | 5 | OM-780 EP | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1009HSR5
Trans RF MOSFET N-CH 110V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | Pulse | 110 | 10 | 2.4 | 1391@50V | 19.7 | 900 | 500(Typ) | 1215 | Tape and Reel | 3 | NI-780S | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09MS031GNR1
Trans RF MOSFET N-CH 40V 3-Pin TO-270 GULL T/R
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14,8258 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 40 | 12 | 2.6 | 317000 | 140@13.6V | 17.2 | 764 | 31(Typ) | 941 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF13750HSR5
Trans RF MOSFET N-CH 105V 5-Pin NI-1230S T/R
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250,1366 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 105 | 10 | 1333000 | 20.5 | 700 | 850(Typ) | 1300 | 5 | NI-1230S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBT3906,215
Trans GP BJT PNP 40V 0.2A 250mW 3-Pin SOT-23 T/R
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NXP Semiconductors | GP BJT | PNP | Bipolar Small Signal | Single | 40 | 40 | 1 | 6 | 0.85@1mA@10mA|0.95@5mA@50mA | 0.2 | 500 | 250 | 30 to 50|50 to 120 | 60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | 4.5(Max) | 0.25@1mA@10mA|0.4@5mA@50mA | 4 | Tape and Reel | Unknown | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A5G26H605W19NR3 RF Power GaN Transistor |
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NXP Semiconductors | HF-BJT | 9 | OM-780-4S4S | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A5G18H610W19NR3 RF Power GaN Transistor |
Von 150,7334 € bis 186,4386 €
pro Stück
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NXP Semiconductors | HF-BJT | 9 | OM-780-4S4S | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU520XRVL
Trans RF BJT NPN 16V 0.05A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143R T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.05 | 8V/10mA | 450 | 50 to 120 | 60@5mA@8V | 0.28 | 26 | 7.5(Typ) | 17 | 10500(Typ) | 1(Min) | Tape and Reel | 4 | SOT-143R | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU530XAR
Trans RF BJT NPN 16V 0.065A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.065 | 8V/15mA | 450 | 50 to 120 | 60@10mA@8V | 0.65 | 24.5 | 10(Typ) | 19.5 | 11000(Typ) | 1.1(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MW6S010NR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R
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21,1574 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone | 68 | 12 | 61400 | 20 | 450 | 10(Typ) | 1500 | Tape and Reel | 3 | TO-270 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1304GNR1
Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | Pulse | 133 | 10 | 2.5 | 39.2@50V | 25.4 | 1.8 | 25(Typ) | 2000 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB156,115
Varactor Diode Single 10V 14.4pF 2-Pin SOD-323 T/R
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NXP Semiconductors | Varaktors | VCO | Single | 10 | 0.01 | 0.02 | 2.7 | 1V/7.5V | 14.4@1V | Tape and Reel | 2 | SOD-323 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFG10/X,215
Trans RF BJT NPN 8V 0.25A 400mW 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 8 | 20 | 1 | 2.5 | 0.25 | 290 | 400 | 2 to 30 | 25@50mA@5V | 7 | 0.2 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK653R5-55C,127
Trans MOSFET N-CH 55V 120A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 55 | 16 | 263000 | 120 | 3.9@10V | 110@5V|191@10V | 191 | 8637@25V | Rail | 3 | TO-220AB | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS25A,115
Trans RF BJT NPN 5V 0.0065A 32mW 3-Pin SC-70 T/R
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NXP Semiconductors | HF-BJT | NPN | Single | 5 | 8 | 1 | 2 | 0.0065 | 1V/0.5mA | 32 | 50 to 120 | 50@0.5mA@1V | 13 | 5000(Typ) | 2(Typ) | Tape and Reel | 3 | SC-70 | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PVR100AD-B3V3,115
Integrated Zener Diode and NPN Bipolar Transistor 6-Pin TSOP T/R
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NXP Semiconductors | Diskrete, Verschiedenes | Integrated Zener Diode and NPN Bipolar Transistor | 6 | TSOP | SO | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB182,315
Diode VAR Cap Single 35V 52pF 2-Pin SOD-523 T/R
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NXP Semiconductors | Varaktors | Tuner|VCO | VHF | Single | 35 | 0.01 | 20.6 | 1V/28V | 52@1V | Tape and Reel | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PHK12NQ03LT,518
Trans MOSFET N-CH 30V 11.8A 8-Pin SO T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2500 | 11.8 | 10.5@10V | 17.6@5V | 1335@16V | Tape and Reel | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BA278,115
Diode PIN Switch 35V 2-Pin SOD-523 T/R
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NXP Semiconductors | PIN | 2 | SOD-523 | SOD | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT18,235
Diode PIN Switch 35V 100mA 3-Pin TO-236AB T/R
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NXP Semiconductors | PIN | Switch | Single | 35 | 100 | 0.7@5mA | 1.2 | 0.1@20V | 1@20V | 3 | TO-236AB | TO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYC30WT-600PQ
Diode Switching 600V 30A 3-Pin(3+Tab) TO-247 Rail
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NXP Semiconductors | Gleichrichter | Switching Diode | Single Dual Anode | 600 | 30 | 300 | 2.75 | 10 | 22 | Rail | 3 | TO-247 | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT151X-650R,127
Thyristor SCR 650V 132A 3-Pin(3+Tab) TO-220F Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 1.5 | 650 | 15 | 20 | 1.75@23A | 5 | 650 | 7.5 | 0.5 | Rail | 3 | TO-220F | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1208,115
Trans RF MOSFET N-CH 6V 0.03A 6-Pin SOT-666 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | 2 | 6 | 6 | 180 | 0.03 | 2.2@5V@Gate 1|3@5V@Gate 2@Amp A|2@5V@Gate 1|3.4@5V@Gate 2@Amp B | 36@Amp A|37@Amp B | 2.1 | Tape and Reel | 6 | SOT-666 | SOT | No | No | No | No | No | EAR99 | No | No |