NXP Semiconductors Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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PMLL4153,115
Diode Switching 75V 0.2A 2-Pin Mini-MELF T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 75 | 0.2 | 4 | 0.88@0.05A | 0.05 | 500 | 4 | Planar | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG2005EPK,315
Diode Schottky 0.7A 2-Pin DFN-D T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 0.7 | 3 | 0.41@0.5A | 300 | 1470 | 3(Typ) | Tape and Reel | 2 | DFN-D | DFN | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RB520S30,115
Diode Schottky 0.2A 2-Pin SC-79 T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 0.2 | 1 | 0.6 | 1@10V | 500 | Tape and Reel | 2 | SC-79 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV65XP,215
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R
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NXP Semiconductors | MOSFETs | Small Signal | P | Single | Enhancement | 1 | 20 | 12 | 260 | 0.9 | 833 | 2.8 | 74@4.5V | 7.7@4.5V | 65 | 744@20V | 58@4.5V|67@2.5V|87@1.8V | TMOS | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9046GNR1
Trans RF FET N-CH 66V 5-Pin TO-270 W GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | CDMA|GSM|GSM EDGE | 66 | 10 | 120@28V | 19 | 920 | 35.5(Typ) | 960 | Tape and Reel | 5 | TO-270 W GULL | TO | No | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9220HSR3
Trans RF MOSFET N-CH 70V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 19.4 | 920 | 65(Typ) | 960 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9202GNR3
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 3 | 19 | 920 | 58(Typ) | 960 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9200NR3
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 19.9 | 920 | 58(Typ) | 960 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9170NR3
Trans RF FET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 19.3 | 920 | 50(Typ) | 960 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S9100HSR3
Trans RF MOSFET N-CH 70V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 70 | 10 | 19.3 | 865 | 72(Typ) | 960 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S7170NR3
Trans RF MOSFET N-CH 70V 3-Pin Case 2021-03 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 19.5 | 618 | 50(Typ) | 803 | Tape and Reel | 3 | Case 2021-03 | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S21100HSR3
Trans RF FET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 18.3 | 2110 | 24(Typ) | 2170 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S21100HR5
Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 18.3 | 2110 | 24(Typ) | 2170 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | 5A991g. | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S21100HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 18.3 | 2110 | 24(Typ) | 2170 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S18260HSR6
Trans RF MOSFET N-CH 65V 9-Pin Case 375J-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 17.9 | 1805 | 74(Typ) | 1880 | Tape and Reel | 9 | Case 375J-02 | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S19140HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 19.1 | 1930 | 34(Typ) | 1990 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S18120HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 65 | 10 | 18.2 | 1805 | 72(Typ) | 1880 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S18120HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 65 | 10 | 18.2 | 1805 | 72(Typ) | 1880 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8HP21130HSR3
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 118000 | 14 | 2110 | 28(Typ) | 2170 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6VP3091NBR1
Trans RF MOSFET N-CH 115V 5-Pin TO-272 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | DVB-T OFDM | 115 | 10 | 591@50V | 22 | 470 | 18(Typ) | 860 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFV09P350-04NR3
Trans RF MOSFET N-CH 105V 5-Pin OM-780 EP T/R
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95,0049 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 105 | 10 | 2.3 | 19.5 | 720 | 100(Typ) | 960 | Tape and Reel | 5 | OM-780 EP | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT26HW050GSR3
Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 14.2 | 2620 | 9(Typ) | 2690 | Tape and Reel | 9 | NI-780-4S4 | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT26P100-4WSR3
Trans RF MOSFET N-CH 65V 5-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 15.1 | 2496 | 22 | 2690 | Tape and Reel | 5 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT26HW050SR3
Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 14.2 | 2620 | 9(Typ) | 2690 | Tape and Reel | 9 | NI-780-4S4 | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT26H050W26SR3 Trans RF MOSFET N-CH 65V 9-Pin NI-780S T/R |
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 14.2 | 2620 | 9(Typ) | 2690 | Tape and Reel | 9 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No |