NXP Semiconductors FET-Transistoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Category | Material | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Mode of Operation | Maximum Drain-Gate Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Typical Gate Charge @ Vgs - (nC) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Typical Input Capacitance @ Vds - (pF) | Type | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical Output Capacitance - (pF) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF8P20160HR3
Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
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NXP Semiconductors | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 10 | 37(Typ) | 16.5 | 1880 | 2025 | Tape and Reel | 5 | Case 465M-01 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||
MRF101AN-50MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220
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Von 425,4755 € bis 439,1722 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | CW | 133 | 10 | 2.7 | 182000 | 149@50V | MOSFET | 115(Typ) | 21.1 | 1.8 | 250 | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||
MRFX1K80H-128MHZ
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
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1.641,5217 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | Pulse | 179 | 10 | 2247000 | 760@65V | MOSFET | 1800(Typ) | 25.9 | 1.8 | 400 | 5 | NI-1230H | No | No | No | No | EAR99 | No | |||||||||||||||||||
MRFE6VS25GNR1
Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R
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35,9919 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|Pulse|CW | 133 | 10 | 2.5 | 39.2@50V | 25(Typ) | 25.4 | 1.8 | 2000 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||
AFT09MP055GNR1
Trans RF MOSFET N-CH 40V 5-Pin TO-270 W GULL T/R
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Von 26,3425 € bis 31,6666 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | CW | 40 | 12 | 2.6 | 625000 | 690@12.5V | 57(Typ) | 17.5(Max) | 764 | 941 | Tape and Reel | 5 | TO-270 W GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||
A2G22S190-01SR3
Trans RF MOSFET 125V 3-Pin NI-400S-240 T/R
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NXP Semiconductors | HF-MOSFETs | GaN | 1-Carrier W-CDMA | 125 | 0 | 2.3 | 36(Typ) | 16.8 | 1800 | 2200 | Tape and Reel | 3 | NI-400S-240 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||
MMRF1011HR5
RF Power LDMOS Transistors
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NXP Semiconductors | HF-MOSFETs | 18 | 1200 | 1400 | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||
| A3T23H450W23SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2300 | 2400 | Tape and Reel | 7 | ACP-1230S-4L2S | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||
| A2V07H525-04NR6 POWER LDMOS TRANSISTOR 400-2700 MHz, 2.5 W AVG., 28 V |
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NXP Semiconductors | HF-MOSFETs | 595 | 851 | Tape and Reel | 5 | Case OM-1230 L | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||
| A3G18H500-04SR3 RF Power GaN FET Transistor |
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NXP Semiconductors | HF-MOSFETs | 1805 | 2200 | Tape and Reel | 5 | CFMF | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||
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MRF6S19100HR3
Trans RF FET N-CH 68V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier N-CDMA|CDMA|TDMA | 68 | 12 | 100 | 16.1 | 1930 | 1990 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||
MRF6S21060NBR1
Trans RF MOSFET N-CH 68V 5-Pin TO-272 W T/R
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NXP Semiconductors | HF-MOSFETs | Single Dual Drain Dual Gate | Enhancement | N | 1 | 2-Carrier W-CDMA|CDMA|TDMA | 68 | 12 | 60 | 15.5 | 2110 | 2170 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||
AFT26HW050SR3
Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R
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NXP Semiconductors | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 9(Typ) | 14.2 | 2620 | 2690 | Tape and Reel | 9 | NI-780-4S4 | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||
MRF6P24190HR6
Trans RF MOSFET N-CH 68V 5-Pin NI-1230 T/R
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NXP Semiconductors | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 2-Carrier W-CDMA | 68 | 12 | 190(Typ) | 14 | 2450 | Tape and Reel | 5 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||
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MRF6V13250HR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | CW|Pulsed RF | 120 | 10 | 2.7 | 476000 | 340@50V | 250(Typ) | 20|22.7 | 960 | 1300 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||
MRF6VP3091NR1
Trans RF MOSFET N-CH 115V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | DVB-T OFDM | 115 | 10 | 591@50V | 18(Typ) | 22 | 470 | 860 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | 5A991g. | Yes | Yes | |||||||||||||||||
MRF7S18170HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880 T/R
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | 1-Carrier W-CDMA | 65 | 10 | 170 | 17.5 | 1805 | 1880 | Tape and Reel | 3 | NI-880 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||
MRF7S19170HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | 1-Carrier W-CDMA | 65 | 10 | 170 | 17.2 | 1930 | 1990 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||
MRF7S27130HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | BWA|OFDM|WIBRO|WIMAX | 65 | 10 | 326@28V | 105 | 16.5 | 2500 | 2700 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||
MRF8P20100HSR3
Trans RF FET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | Enhancement | N | 1-Carrier W-CDMA|GSM EDGE | 65 | 10 | 20(Typ) | 16 | 1805 | 2025 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||
MRF8P20160HSR3
Trans RF FET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 10 | 37(Typ) | 16.5 | 1880 | 2025 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||
MRF8P9300HSR5
Trans RF MOSFET N-CH 70V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | Enhancement | N | 2 | 1-Carrier W-CDMA | 70 | 10 | 100(Typ) | 19.4 | 860 | 960 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||
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MRF8S21100HSR3
Trans RF FET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | 1-Carrier W-CDMA | 65 | 10 | 24(Typ) | 18.3 | 2110 | 2170 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||
MRF8S23120HR5
Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | 1-Carrier W-CDMA | 65 | 10 | 28(Typ) | 16.6 | 2300 | 2400 | Tape and Reel | 5 | Case 465M-01 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||
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MRF8S9100HSR3
Trans RF MOSFET N-CH 70V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | Single | Enhancement | N | 1 | GSM|GSM EDGE | 70 | 10 | 72(Typ) | 19.3 | 865 | 960 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No |