NXP Semiconductors Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BZV55-B2V4,115
Diode Zener Single 2.4V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 2.4 | 2% | 5 | 0.9 | 50 | 100 | 500 | 450 | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B3V0,115
Diode Zener Single 3V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 3 | 2% | 5 | 0.9 | 10 | 95 | 500 | 450 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B33,115
Diode Zener Single 33V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 33 | 2% | 2 | 0.9 | 0.05 | 80 | 500 | 45 | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B36,115
Diode Zener Single 36V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 36 | 2% | 2 | 0.9 | 0.05 | 90 | 500 | 45 | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B30,115
Diode Zener Single 30V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 30 | 2% | 2 | 0.9 | 0.05 | 80 | 500 | 50 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B24,115
Diode Zener Single 24V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 24 | 2% | 5 | 0.9 | 0.05 | 70 | 500 | 55 | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B13,115
Diode Zener Single 13V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 13 | 2% | 5 | 0.9 | 0.1 | 30 | 500 | 80 | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B11,115
Diode Zener Single 11V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 11 | 2% | 5 | 0.9 | 0.1 | 20 | 500 | 85 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP5600HSR5
Trans RF MOSFET N-CH 130V 5-Pin NI-1230S T/R
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209,4462 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 130 | 10 | 1667000 | 342@50V | 25 | 1.8 | 600(Typ) | 600 | Tape and Reel | 5 | NI-1230S | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P18265HR6
Trans RF MOSFET N-CH 65V 9-Pin Case 375I-03 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 16 | 1805 | 72(Typ) | 1880 | Tape and Reel | 9 | Case 375I-03 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V12500HSR5
Trans RF FET N-CH 110V 3-Pin NI-780S T/R
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Von 584,9133 € bis 610,267 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 110 | 10 | 1391@50V | 19.7 | 960 | 500(Typ) | 1215 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6V14300HSR5
Trans RF MOSFET N-CH 50V 3-Pin NI-780S T/R
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433,6553 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | 50 | 18 | 1200 | 330(Typ) | 1400 | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V14300HR5
Trans RF MOSFET N-CH 100V 3-Pin NI-780 T/R
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513,9922 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 100 | 10 | 2.4 | 330@50V | 18 | 1200 | 330(Typ) | 1400 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6V12250HSR5
Trans RF MOSFET N-CH 100V 3-Pin NI-780S T/R
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338,5813 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 100 | 10 | 20.3 | 960 | 275(Typ) | 1215 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6V12500HR5
Trans RF MOSFET N-CH 110V 3-Pin NI-780 T/R
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634,0657 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 110 | 10 | 1391@50V | 19.7 | 960 | 500(Typ) | 1215 | Tape and Reel | 3 | NI-780 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6V12250HR5
Trans RF MOSFET N-CH 100V 3-Pin NI-780 T/R
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536,2102 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 100 | 10 | 20.3 | 960 | 275(Typ) | 1215 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF1K50GNR5
Trans RF MOSFET N-CH 133V 4-Pin Case OM-1230G L T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | Pulse | 133 | 10 | 2941000 | 683@50V | 23 | 1.8 | 1500(Typ) | 500 | Tape and Reel | 4 | Case OM-1230G L | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF5S9080NBR1
Trans RF MOSFET N-CH 65V 5-Pin TO-272 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | GSM|GSM EDGE | 65 | 15 | 18.5|19 | 869 | 80 | 960 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS40,235
Diode Schottky 0.12A 3-Pin SOT-23 T/R Automotive AEC-Q101
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 0.12 | 0.2 | 1@0.04A | 10 | 500K/W | 5 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC53PASX
Trans GP BJT PNP 80V 1A 1650mW 3-Pin DFN-D EP T/R
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NXP Semiconductors | GP BJT | PNP | Bipolar Power | Single | 80 | 100 | 1 | 5 | 1 | 298 | 1650 | 30 to 50|50 to 120 | 63@5mA@2V|63@150mA@2V|40@500mA@2V | 15 | 0.5@50mA@500mA | Tape and Reel | 3 | DFN-D EP | DFN | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC807-25W,115
Trans GP BJT PNP 45V 0.5A 290mW 3-Pin SC-70 T/R
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NXP Semiconductors | GP BJT | PNP | Bipolar Small Signal | Single | 45 | 50 | 1 | 5 | 0.5 | 290 | 30 to 50|50 to 120 | 160@100mA@1V|40@500mA@1V | 0.7@50mA@500mA | Tape and Reel | 3 | SC-70 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847AQAZ
Trans GP BJT NPN 45V 0.1A 440mW 3-Pin DFN-D EP T/R Automotive AEC-Q101
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NXP Semiconductors | GP BJT | NPN | Bipolar Small Signal | Single | 45 | 50 | 1 | 6 | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | 0.1 | 446 | 440 | 50 to 120 | 110@2mA@5V | 1.5(Max) | 0.2@0.5mA@10mA|0.4@5mA@100mA | 10 | Tape and Reel | 3 | DFN-D EP | DFN | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC869,115
Trans GP BJT PNP 20V 2A 1350mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
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NXP Semiconductors | GP BJT | PNP | Bipolar Power | Single Dual Collector | 20 | 32 | 1 | 5 | 2 | 250 | 1350 | 30 to 50|50 to 120 | 50@5mA@10V|85@500mA@1V|60@1A@1V|40@2A@1V | 28 | 0.5@100mA@1A|0.6@200mA@2A | Tape and Reel | 4 | SOT-89 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS19,215
Trans GP BJT NPN 20V 0.03A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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NXP Semiconductors | GP BJT | NPN | Bipolar Small Signal | Single | 20 | 30 | 1 | 5 | 0.03 | 500 | 250 | 50 to 120 | 65@1mA@10V | 1 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2PB709ASL,215
Trans GP BJT PNP 45V 0.1A 250mW 3-Pin SOT-23 T/R
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NXP Semiconductors | GP BJT | PNP | Bipolar Small Signal | Single | 45 | 45 | 1 | 6 | 0.1 | 250 | 200 to 300 | 290@2mA@10V | 0.5@10mA@100mA | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | EAR99 | Yes | No |