NXP Semiconductors Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MAC223A8X,127
TRIAC 600V 230A 3-Pin(3+Tab) TO-220F Rail
|
|
NXP Semiconductors | TRIACs | 50 | 300(Typ) | 0.5 | 1 | 75 | 30 | 600 | 1.55@30A | 600 | Rail | 3 | TO-220F | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1109WR,115
Trans RF MOSFET N-CH 11V 0.03A 4-Pin(3+Tab) CMPAK T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single Dual Gate | Enhancement | 1 | 11 | 11 | 0.03 | 200 | 2.2@9V@Gate 1|1.5@9V@Gate 2 | 38 | 2.5 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS25A,115
Trans RF BJT NPN 5V 0.0065A 32mW 3-Pin SC-70 T/R
|
|
NXP Semiconductors | HF-BJT | NPN | Single | 5 | 1 | 8 | 2 | 0.0065 | 1V/0.5mA | 50 to 120 | 50@0.5mA@1V | 32 | 13 | 5000(Typ) | 2(Typ) | Tape and Reel | 3 | SC-70 | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF6G27-75,112
Trans RF MOSFET N-CH 65V 18A 3-Pin SOT-502A Bulk
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA | 65 | 13 | 18 | 250@6.15V | 2500 | 75(Typ) | 17 | Bulk | 3 | SOT-502A | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB182LX,315
Diode VAR Cap Single 32V 52pF 2-Pin SOD T/R
|
|
NXP Semiconductors | Varaktors | Tuner|VCO | VHF | Single | 32 | 0.01 | 0.02 | 20.6 | 1V/28V | 52@1V | Tape and Reel | 2 | SOD | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BA278,115
Diode PIN Switch 35V 2-Pin SOD-523 T/R
|
|
NXP Semiconductors | PIN | 2 | SOD-523 | SOD | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BT151X-650R,127
Thyristor SCR 650V 132A 3-Pin(3+Tab) TO-220F Rail
|
|
NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 0.5 | 1.5 | 15 | 20 | 650 | 5 | 1.75@23A | 650 | 7.5 | Rail | 3 | TO-220F | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK654R0-75C,127
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Rail Automotive AEC-Q101
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 75 | 16 | 120 | 4.2@10V | 132@5V|234@10V | 234 | 306000 | 11580@25V | Rail | 3 | TO-220AB | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A5G35S008N-3400 Air Fast RF Power GaN Transistor |
Von 130,2534 € bis 141,1622 €
pro Stück
|
NXP Semiconductors | HF-BJT | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1108R,215
Trans RF FET N-CH 3V 0.01A 4-Pin(3+Tab) SOT-143R T/R
|
|
NXP Semiconductors | HF-MOSFETs | Si | N | Single | Depletion | 1 | 3 | 7 | 0.01 | 20000@0V | 1 | Tape and Reel | 4 | SOT-143R | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYC15X-600PQ
Diode Switching 600V 15A 2-Pin(2+Tab) TO-220F Rail
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Single | 600 | 15 | 200 | 3.2 | 10 | 18 | Rail | 2 | TO-220F | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101AN-50MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220
|
Von 425,4755 € bis 439,1722 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 2.7 | 182000 | 149@50V | 1.8 | 115(Typ) | 21.1 | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1118,215
Trans RF FET 3V 0.01A 4-Pin(3+Tab) SOT-143B T/R
|
|
NXP Semiconductors | HF-MOSFETs | Si | Single | Depletion | 1 | 3 | 7 | 0.01 | 23.3@0V | 1 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PHE13005,127
Trans GP BJT NPN 400V 4A 75000mW 3-Pin(3+Tab) TO-220AB Rail
|
|
NXP Semiconductors | GP BJT | NPN | Bipolar Power | Si | Single | 400 | 1 | 700 | 9 | 1.2@0.2A@1A|1.6@0.5A@2A | 4 | 2 to 30 | 10@2A@5V|12@1A@5V | 75000 | 0.5@0.2A@1A|0.6@0.5A@2A|1@1A@4A | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3G22H400-04SR3 RF Power GaN FET Transistor |
|
NXP Semiconductors | HF-MOSFETs | 1800 | 400 | Tape and Reel | 5 | NI-780S | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BTA216X-600B,127
TRIAC 600V 16A(RMS) 150A 3-Pin(3+Tab) TO-220F Rail
|
|
NXP Semiconductors | TRIACs | 100 | 4000(Typ) | 0.5 | 1.5 | 50 | 60 | 600 | 1.5@20A | 600 | 16 | Rail | 3 | TO-220F | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1001HR5
RF Power LDMOS Transistor
|
|
NXP Semiconductors | HF-MOSFETs | 1-Tone | 2450 | 13.2 | 5 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BF1201WR,135
Trans RF FET N-CH 10V 0.03A 4-Pin(3+Tab) CMPAK T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single Dual Gate | Enhancement | 1 | 10 | 6 | 0.03 | 200 | 2.6@5V@Gate 1|1.1@5V@Gate 2 | 33.5 | 7 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT137B-600E,118
TRIAC 600V 71A 3-Pin(2+Tab) D2PAK T/R
|
|
NXP Semiconductors | TRIACs | 50 | 50(Typ) | 0.5 | 1 | 25 | 20 | 600 | 1.65@10A | 600 | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BF909R,215
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) SOT-143R T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 0.04 | 200@Ta=40°C | 3.6@5V@Gate 1|2.3@5V@Gate 2 | 2.8 | Tape and Reel | 4 | SOT-143R | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW62,133
Diode Switching 75V 0.25A 2-Pin ALF Ammo
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Single | 75 | 0.25 | 4 | 1@0.1A | 5 | 4 | 350 | Ammo | 2 | ALF | DO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1204,115
Trans RF MOSFET N-CH 10V 0.03A 6-Pin TSSOP T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Dual Dual Gate | Enhancement | 2 | 10 | 6 | 0.03 | 200 | 1.7@5V@Gate 1|3.3@5V@Gate 2 | 34 | 11 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYQ28ED-200,118
Diode Switching 200V 10A 3-Pin(2+Tab) DPAK T/R
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 10 | 55 | 1.25 | 10 | 25 | Tape and Reel | 3 | DPAK | TO | No | Yes | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8HP21130HSR3
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 118000 | 2110 | 28(Typ) | 14 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BAP50-02,115
PIN Diode 50V 50mA 2-Pin SOD-523 T/R
|
|
NXP Semiconductors | PIN | Single | 50 | 50 | 5@10mA | 1.1 | 40@0.5mA | 0.1 | 0.35@5V | 1.05 | 715 | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | Yes | No |