NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF6V13250HR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW|Pulsed RF | 120 | 10 | 2.7 | 476000 | 340@50V | 960 | 250(Typ) | 20|22.7 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6VP3091NR1
Trans RF MOSFET N-CH 115V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | DVB-T OFDM | 115 | 10 | 591@50V | 470 | 18(Typ) | 22 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S18170HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1805 | 170 | 17.5 | Tape and Reel | 3 | NI-880 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S19170HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1930 | 170 | 17.2 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S27130HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | BWA|OFDM|WIBRO|WIMAX | 65 | 10 | 326@28V | 2500 | 105 | 16.5 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P20100HSR3
Trans RF FET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA|GSM EDGE | 65 | 10 | 1805 | 20(Typ) | 16 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P20160HSR3
Trans RF FET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 1880 | 37(Typ) | 16.5 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P9300HSR5
Trans RF MOSFET N-CH 70V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 2 | 1-Carrier W-CDMA | 70 | 10 | 860 | 100(Typ) | 19.4 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S21100HSR3
Trans RF FET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 2110 | 24(Typ) | 18.3 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S23120HR5
Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 2300 | 28(Typ) | 16.6 | Tape and Reel | 5 | Case 465M-01 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S9100HSR3
Trans RF MOSFET N-CH 70V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 70 | 10 | 865 | 72(Typ) | 19.3 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9102NR3
Trans RF FET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 865 | 28(Typ) | 23.1 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T23H300-24SR6 RF POWER LDMOS TRANSISTOR |
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NXP Semiconductors | HF-MOSFETs | 2300 | 14.9 | Tape and Reel | 7 | NI-1230 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1316NR1
Trans RF MOSFET N-CH 133V 4-Pin TO-270 WB EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | Pulse | 133 | 10 | 2.8 | 909000 | 168@50V | 1.8 | 361(Typ) | 27 | 4 | TO-270 WB EP | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NXPSC04650DJ Diode Schottky 650V 4A 3-Pin(2+Tab) DPAK |
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NXP Semiconductors | Gleichrichter | 1.7@4A | 3 | DPAK | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1314GSR5 Trans RF MOSFET N-CH 105V 5-Pin NI-1230S T/R |
651,0373 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 105 | 10 | 909000 | 1200 | 1000 | 15.5 | 5 | NI-1230S | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF7S19080HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | TD-SCDMA|CDMA|1-Carrier W-CDMA | 65 | 10 | 1930 | 80 | 18 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S19080HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | TD-SCDMA|CDMA|1-Carrier W-CDMA | 65 | 10 | 1930 | 80 | 18 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MW7IC2425GNR1
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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NXP Semiconductors | HF-MOSFETs | Tape and Reel | 17 | TO-270 W GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09MS031GNR1
Trans RF MOSFET N-CH 40V 3-Pin TO-270 GULL T/R
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14,791 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 40 | 12 | 2.6 | 317000 | 140@13.6V | 764 | 31(Typ) | 17.2 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1006HSR5
Trans RF MOSFET N-CH 120V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 120 | 10 | 3 | 1333000 | 506@50V | 10 | 1000(Typ) | 20 | Tape and Reel | 5 | NI-1230S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1006NT1
RF Power LDMOS Transistor
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NXP Semiconductors | HF-MOSFETs | 728 | 10 | 19.8 | Tape and Reel | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFV141KHR5
RF POWER LDMOS TRANSISTORS
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NXP Semiconductors | HF-MOSFETs | Pulse | 1200 | 1000 | 17.7 | Tape and Reel | 5 | NI-1230H | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T21H450W19SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2110 | 15.7 | Tape and Reel | 9 | Case 375J-02 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09S200W02NR3
Trans RF MOSFET N-CH 70V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 70 | 10 | 2 | 716 | 56(Typ) | 19.2 | 3 | NI-780 | No | No | No | No | No | 5A991g. | Yes | No |