NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF8P9300HSR5
Trans RF MOSFET N-CH 70V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 2 | 1-Carrier W-CDMA | 70 | 10 | 19.4 | 860 | 100(Typ) | 960 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S21100HSR3
Trans RF FET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 18.3 | 2110 | 24(Typ) | 2170 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S23120HR5
Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 16.6 | 2300 | 28(Typ) | 2400 | Tape and Reel | 5 | Case 465M-01 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S9100HSR3
Trans RF MOSFET N-CH 70V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 70 | 10 | 19.3 | 865 | 72(Typ) | 960 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9102NR3
Trans RF FET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 23.1 | 865 | 28(Typ) | 960 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V13250HR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW|Pulsed RF | 120 | 10 | 2.7 | 476000 | 340@50V | 20|22.7 | 960 | 250(Typ) | 1300 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80HR5
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H T/R
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428,3044 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | Pulse | 179 | 10 | 2247000 | 760@65V | 25.1 | 1.8 | 1800(Typ) | 400 | Tape and Reel | 5 | NI-1230H | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9120NR3
Trans RF MOSFET N-CH 70V 3-Pin Case 2021-0 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA|CDMA | 70 | 10 | 19.8 | 700 | 33(Typ) | 960 | Tape and Reel | 3 | Case 2021-0 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P9040NR1
Trans RF MOSFET N-CH 70V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 2 | 1-Carrier W-CDMA | 70 | 10 | 19.1 | 700 | 4(Typ) | 1000 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S20010NR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|2-Carrier W-CDMA|2-Tone|GSM EDGE|IS-95 | 68 | 12 | 0.12@28V | 15.5 | 1600 | 1(Typ) | 2200 | Tape and Reel | 3 | TO-270 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S19140HSR3
Trans RF MOSFET N-CH 68V 3-Pin NI-880S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Carrier N-CDMA|CDMA|TDMA | 68 | 12 | 16 | 1930 | 140 | 1990 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1006NT1
RF Power LDMOS Transistor
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NXP Semiconductors | HF-MOSFETs | 19.8 | 728 | 10 | 2700 | Tape and Reel | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFV141KHR5
RF POWER LDMOS TRANSISTORS
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NXP Semiconductors | HF-MOSFETs | Pulse | 17.7 | 1200 | 1000 | 1400 | Tape and Reel | 5 | NI-1230H | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1314GSR5 Trans RF MOSFET N-CH 105V 5-Pin NI-1230S T/R |
651,1139 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 105 | 10 | 909000 | 15.5 | 1200 | 1000 | 1400 | 5 | NI-1230S | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T21H450W19SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 15.7 | 2110 | 2200 | Tape and Reel | 9 | Case 375J-02 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1006HSR5
Trans RF MOSFET N-CH 120V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 120 | 10 | 3 | 1333000 | 506@50V | 20 | 10 | 1000(Typ) | 500 | Tape and Reel | 5 | NI-1230S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF7S19080HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | TD-SCDMA|CDMA|1-Carrier W-CDMA | 65 | 10 | 18 | 1930 | 80 | 1990 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S19080HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | TD-SCDMA|CDMA|1-Carrier W-CDMA | 65 | 10 | 18 | 1930 | 80 | 1990 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF8S9200NR3
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 19.9 | 920 | 58(Typ) | 960 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MW7IC2425GNR1
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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NXP Semiconductors | HF-MOSFETs | Tape and Reel | 17 | TO-270 W GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AFT09S200W02NR3
Trans RF MOSFET N-CH 70V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 70 | 10 | 2 | 19.2 | 716 | 56(Typ) | 960 | 3 | NI-780 | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1009HR5
Trans RF MOSFET N-CH 110V 3-Pin NI-780S T/R
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Von 673,3506 € bis 809,3103 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | Pulse | 110 | 10 | 2.4 | 1391@50V | 19.7 | 960 | 500(Typ) | 1215 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1015GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone|CW | 68 | 12 | 3 | 23@28V | 20 | 1 | 10(Typ) | 2000 | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1013HSR5
RF Power LDMOS Transistors
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NXP Semiconductors | HF-MOSFETs | Pulse | 13.3 | 2700 | 2900 | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1023HSR5 RF POWER LDMOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE LATERAL MOSFET |
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NXP Semiconductors | HF-MOSFETs | W-CDMA | 14.9 | 2300 | 2400 | Tape and Reel | 7 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No |