NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF8S9200NR3
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 920 | 58(Typ) | 19.9 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MW7IC2425GNR1
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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NXP Semiconductors | HF-MOSFETs | Tape and Reel | 17 | TO-270 W GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T21H450W19SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2110 | 15.7 | Tape and Reel | 9 | Case 375J-02 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AFT09S200W02NR3
Trans RF MOSFET N-CH 70V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 70 | 10 | 2 | 716 | 56(Typ) | 19.2 | 3 | NI-780 | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1009HR5
Trans RF MOSFET N-CH 110V 3-Pin NI-780S T/R
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Von 673,3506 € bis 809,3103 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | Pulse | 110 | 10 | 2.4 | 1391@50V | 960 | 500(Typ) | 19.7 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1015GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone|CW | 68 | 12 | 3 | 23@28V | 1 | 10(Typ) | 20 | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1013HSR5
RF Power LDMOS Transistors
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NXP Semiconductors | HF-MOSFETs | Pulse | 2700 | 13.3 | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1023HSR5 RF POWER LDMOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE LATERAL MOSFET |
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NXP Semiconductors | HF-MOSFETs | W-CDMA | 2300 | 14.9 | Tape and Reel | 7 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P9040GNR1
Trans RF MOSFET N-CH 70V 5-Pin TO-270 W GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 2 | 1-Carrier W-CDMA | 70 | 10 | 700 | 4(Typ) | 19.1 | Tape and Reel | 5 | TO-270 W GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT05MP075NR1
Trans RF MOSFET N-CH 40V 5-Pin TO-270 W T/R
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20,4429 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 40 | 12 | 2.5 | 690000 | 148@12.5V | 136 | 70(Typ) | 21 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1024HSR5 RF POWER LDMOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE LATERAL MOSFET |
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NXP Semiconductors | HF-MOSFETs | W-CDMA | 2496 | 50 | 14.1 | Tape and Reel | 7 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFG35003N6AT1
Trans RF MOSFET 8V 4-Pin PLD-1.5 T/R
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NXP Semiconductors | HF-MOSFETs | GaAs | Single Dual Source | 1 | 1-Carrier W-CDMA | 8 | -5 | 0.7 | 500 | 0.45(Typ) | 10 | Tape and Reel | 4 | PLD-1.5 | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9202GNR3
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 3 | 920 | 58(Typ) | 19 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6VP41KHSR5
Trans RF MOSFET N-CH 110V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 110 | 10 | 1333000 | 506@50V | 10 | 1000(Typ) | 20.1 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S27015GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA|BWA|CDMA|OFDM|WIBRO|WIMAX | 68 | 12 | 2000 | 3(Typ) | 14 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1019NR4
Trans RF MOSFET N-CH 100V 4-Pin PLD-1.5 T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | Pulse | 100 | 10 | 2.5 | 9.55@50V | 960 | 10(Typ) | 25 | 4 | PLD-1.5 | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1011HSR5
RF Power LDMOS Transistors
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NXP Semiconductors | HF-MOSFETs | Pulse | 1200 | 18 | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1004NR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R
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24,0913 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|2-Carrier W-CDMA|2-Tone|GSM EDGE | 68 | 12 | 3.5 | 120@28V | 1600 | 10(Typ) | 15.5|16 | Tape and Reel | 3 | TO-270 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFIC31025GNR1
POWER LDMOS TRANSISTOR 400-2700 MHz, 2.5 W AVG., 28 V
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NXP Semiconductors | HF-MOSFETs | Pulse | 2400 | 25 | 22 | 0.25um | Tape and Reel | 17 | TO-270WBG EP | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AFT05MS031GNR1
Trans RF MOSFET N-CH 40V 3-Pin TO-270 GULL T/R
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13,7355 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW | 40 | 12 | 2.6 | 294000 | 109@13.6V | 136 | 17.7 | Tape and Reel | 3 | TO-270 GULL | TO | No | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT05MP075GNR1
Trans RF MOSFET N-CH 40V 5-Pin TO-270 W GULL T/R
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Von 18,2764 € bis 19,2037 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 40 | 12 | 2.5 | 690000 | 148@12.5V | 136 | 70(Typ) | 21 | Tape and Reel | 5 | TO-270 W GULL | TO | No | No | No | No | No | 5A991g. | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRFE6VP5150NR1
Trans RF MOSFET N-CH 133V 5-Pin TO-270 W T/R
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37,7574 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW|Pulsed RF | 133 | 10 | 2.8 | 952000 | 96.7@50V | 1.8 | 179(Typ) | 26.1 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A3G26H350W17SR3
RF Power Gan Transistor
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NXP Semiconductors | HF-MOSFETs | 2496 | Tape and Reel | 7 | CFMF | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NXPSC04650DJ Diode Schottky 650V 4A 3-Pin(2+Tab) DPAK |
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NXP Semiconductors | Gleichrichter | 1.7@4A | 3 | DPAK | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T23H450W23SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2300 | Tape and Reel | 7 | ACP-1230S-4L2S | No | No | No | No | EAR99 | Yes | No |