NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF8P20165WHSR3
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 14.8 | 1880 | 37(Typ) | 2025 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S21120HSR3
Trans RF FET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 17.6 | 2110 | 28(Typ) | 2170 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S7120NR3
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 19.2 | 728 | 32(Typ) | 768 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9170NR3
Trans RF FET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 19.3 | 920 | 50(Typ) | 960 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6P3300HR3
Trans RF FET N-CH 66V 5-Pin NI-860C3 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 2-Tone | 66 | 12 | 106@32V | 20.4 | 470 | 270(Typ) | 860 | Tape and Reel | 5 | NI-860C3 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9046GNR1
Trans RF FET N-CH 66V 5-Pin TO-270 W GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | CDMA|GSM|GSM EDGE | 66 | 10 | 120@28V | 19 | 920 | 35.5(Typ) | 960 | Tape and Reel | 5 | TO-270 W GULL | TO | No | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9045NR1
Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|CW|GSM EDGE | 66 | 12 | 81@28V | 20|22.1 | 45 | 1000 | Tape and Reel | 3 | TO-270 | TO | No | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP5300NR1
Trans RF MOSFET N-CH 133V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW|Pulsed RF | 133 | 10 | 2.8 | 909000 | 168@50V | 27 | 1.8 | 361(Typ) | 600 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG4005ESFYL
Diode Schottky 0.5A 2-Pin DSN T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 40 | 0.5 | 3.5 | 0.88 | 1.2(Typ) | 1200 | 1.28(Typ) | 2 | DSN | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG6020ETP,115
Diode Schottky 2.8A 2-Pin CFP5 T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 2.8 | 50 | 0.53@2A | 150 | 2500 | 8.6(Typ) | Tape and Reel | 2 | CFP5 | SOD | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A2G22S160-01SR3
Trans RF MOSFET 125V 3-Pin NI-400S-240 T/R
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NXP Semiconductors | HF-MOSFETs | GaN | Single | 1 | 1-Carrier W-CDMA | 125 | 0 | 2.3 | 19.6 | 1800 | 32(Typ) | 2200 | Tape and Reel | 3 | NI-400S-240 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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A2G35S200-01SR3
Trans RF FET 125V 3-Pin NI-400S-2S T/R
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NXP Semiconductors | HF-MOSFETs | 1-Carrier W-CDMA | 125 | 0 | 16.1 | 3400 | 40 | 3600 | Tape and Reel | 3 | NI-400S-2S | No | No | No | No | No | 3A001b.3.a. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A2T07D160W04SR3
Trans RF MOSFET N-CH 70V 5-Pin NI-780S T/R
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Von 85,4286 € bis 102,6738 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 70 | 10 | 2 | 21.5 | 716 | 30(Typ) | 960 | 5 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T18S160W31SR3 RF POWER LDMOS TRANSISTORS |
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NXP Semiconductors | HF-MOSFETs | 5 | NI-780S-2L2LA | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A2T21H100-25SR3
RF POWER LDMOS TRANSISTOR
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NXP Semiconductors | HF-MOSFETs | 17.4 | 2110 | 18 | 2170 | Tape and Reel | 9 | NI-780-4S4 | No | Yes | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T21H410-24SR6 RF POWER LDMOS TRANSISTOR |
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NXP Semiconductors | HF-MOSFETs | 2110 | 2170 | Tape and Reel | 7 | NI-1230 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T21S160-12SR3 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2110 | 2170 | Tape and Reel | 5 | CFMF | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T21S260-12SR3 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2110 | 2170 | Tape and Reel | 5 | CFMF | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T23H160-24SR3 High Reliability RF FET IC |
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NXP Semiconductors | HF-MOSFETs | 17.7 | 2300 | 28 | 2400 | Tape and Reel | 7 | CFMF | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T26H300-24SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2496 | 2690 | Tape and Reel | 7 | NI-1230 | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T20H330W24SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | W-CDMA | 16.9 | 1880 | 2025 | 7 | NI-1230 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFG24S100HR5 Wide Band RF Power Gan Transistor, 1-2690 MHz, 125 W CW, 50 V |
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NXP Semiconductors | HF-MOSFETs | 3 | NI-360H-2SB | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT05MS003NT1
Trans RF MOSFET N-CH 30V 4-Pin(3+Tab) SOT-89A T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single Dual Source | Enhancement | 1 | CW | 30 | 12 | 2.6 | 30500 | 38.5@7.5V | 20.8 | 1.8 | 3(Typ) | 941 | Tape and Reel | 4 | SOT-89A | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09MS007NT1
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
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3,8693 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW | 30 | 12 | 2.6 | 182000 | 107@7.5V | 15.6(Max) | 136 | 7.3(Typ) | 941 | Tape and Reel | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09S282NR3
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 2 | 20 | 720 | 80(Typ) | 960 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | 5A991g. | Yes | No |