NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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Meist Gesucht
BFG410W,115
Trans RF BJT NPN 4.5V 0.012A 54mW 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 4.5 | 1 | 10 | 1 | 0.012 | 2V/10mA | 50 to 120 | 50@10mA@2V | 54 | 5(Typ) | 21 | 15 | 22000(Typ) | 1.2(Typ) | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gekauft
MRFE6VP6300HR5
Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R
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162,7268 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 130 | 10 | 1050000 | 188@50V | 1.8 | 300(Typ) | 26.5 | Tape and Reel | 5 | NI-780 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
MRFE8VP8600HR5
Trans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R
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165,6902 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | OFDM | 115 | 10 | 2.3 | 1250000 | 452@50V | 470 | 140(Typ) | 21 | Tape and Reel | 5 | NI-1230H | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP61K25NR6
Trans RF MOSFET N-CH 133V Medical 5-Pin Case OM-1230 L T/R
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206,0773 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW|Pulsed RF | 133 | 10 | 2.7 | 3333000 | 562@50V | 1.8 | 1309(Typ) | 23 | Tape and Reel | 5 | Case OM-1230 L | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
AFT20S015GNR1
Trans RF MOSFET N-CH 65V 3-Pin TO-270 GULL T/R
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Von 27,641 € bis 33,2212 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 1805 | 1.5 | 17.6 | Tape and Reel | 3 | TO-270 GULL | TO | No | Yes | No | No | No | No | 5A991g. | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
AFT20S015NR1
Trans RF MOSFET N-CH 65V 3-Pin TO-270 T/R
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17,1825 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 1805 | 1.5 | 17.6 | Tape and Reel | 3 | TO-270 | TO | No | Yes | No | No | No | No | 5A991g. | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFV10700HSR5
Trans RF MOSFET N-CH 105V 5-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 105 | 10 | 2.3 | 526000 | 960 | 700(Typ) | 19.2 | Tape and Reel | 5 | NI-780S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX600HSR5
Trans RF MOSFET N-CH 179V 5-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | Pulsed CW | 179 | 10 | 1333000 | 299@65V | 1.8 | 680(Typ) | 26.4 | Tape and Reel | 5 | NI-780S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1304GNR1
Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | Pulse | 133 | 10 | 2.5 | 39.2@50V | 1.8 | 25(Typ) | 25.4 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMRF1007HR5
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 110 | 10 | 2.4 | 539@50V | 900 | 1000(Typ) | 21.4 | Tape and Reel | 5 | NI-1230 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8VP13350NR3
Trans RF MOSFET N-CH 100V Medical 4-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | Pulsed CW | 100 | 10 | 2.3 | 700 | 355(Typ) | 19.2 | Tape and Reel | 4 | OM-780 EP | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1005HR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW|Pulsed RF | 120 | 10 | 2.7 | 476000 | 340@50V | 250(Typ) | 20|22.7 | Tape and Reel | 3 | NI-780 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BAP70-02,115
Diode PIN Attenuator 50V 100mA 2-Pin SOD-523 T/R Automotive AEC-Q101
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Von 0,0761 € bis 0,0853 €
pro Stück
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NXP Semiconductors | PIN | Attenuator | Single | 50 | 100 | 1.9@100mA | 1.1@50mA | 100@0.5mA | 0.1 | 0.25@20V | 1.25 | 415 | 2 | SOD-523 | SOD | No | Unknown | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BB201,215
Diode VAR Cap Dual Common Cathode 15V 89pF 3-Pin TO-236AB T/R
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NXP Semiconductors | Varaktors | Tuner|VCO | Dual Common Cathode | 15 | 0.01 | 0.02 | 3.1 | 1V/7.5V | 89@1V | Tape and Reel | 3 | TO-236AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT168GW,115
SCR 600V 1A(RMS) 9A 4-Pin(3+Tab) SC-73 T/R
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 50 | 800(Typ) | 0.1 | 0.8 | 0.2 | 5 | 600 | 5 | 1.7@1.2A | 600 | 0.63 | 1 | Tape and Reel | 4 | SC-73 | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S19100NR1
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | 2-Carrier N-CDMA | 68 | ±12 | 287000 | 1930 | 100 | 14.5 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA312B-600B,118
TRIAC 600V 12A(RMS) 110A 3-Pin(2+Tab) D2PAK T/R
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NXP Semiconductors | TRIACs | 100 | 2000(Typ) | 0.5 | 1 | 50 | 60 | 600 | 1.6@15A | 600 | 12 | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU530R
Trans RF BJT NPN 16V 0.065A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 1 | 30 | 3 | 0.065 | 8V/15mA | 50 to 120 | 60@10mA@8V | 0.93 | 450 | 0.65 | 10(Typ) | 26 | 19.5 | 11000(Typ) | 1.1(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1205C,115
Trans RF FET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 6 | 6 | 0.03 | 180 | 2.2@5V@Gate 1|3@5V@Gate 2@Amp A|2@5V@Gate 1|3.4@5V@Gate 2@Amp B | 35 | 1.9@Amp A|2.1@Amp B | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PHN203,518
Trans MOSFET N-CH 30V 6.3A 8-Pin SO T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 30 | ±20 | 6.3 | 30@10V | 14.6@10V | 14.6 | 2000 | 560@20V | Tape and Reel | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW62,143
Diode Switching 75V 0.25A 2-Pin ALF
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 75 | 0.25 | 4 | 1@0.1A | 5 | 4 | 350 | 2 | ALF | DO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT21S220W02GSR3 Trans RF MOSFET N-CH 65V 3-Pin NI-780GS T/R |
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 2110 | 50(Typ) | 19.1 | Tape and Reel | 3 | NI-780GS | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYV415W-600PQ
Diode Switching 600V 30A 3-Pin(3+Tab) TO-247
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NXP Semiconductors | Gleichrichter | Switching Diode | Dual Common Cathode | 600 | 30 | 150 | 2.1@15A | 10 | 50 | 3 | TO-247 | No | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BT138-800E/DG,127 TRIAC SENS GATE 800V 12A TO220AB |
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NXP Semiconductors | TRIACs | 3 | TO-220AB | TO | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1021NT1
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 30 | 12 | 114000 | 107@7.5V | 136 | 7.3(Typ) | 15.6 | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes |