NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BZX84C22-E3-18
Diode Zener Single 22V 5% 500mW 3-Pin SOT-23 T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 22 | 5% | 5 | 0.05 | 55 | 500 | 500 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1008NT1
RF Power LDMOS Transistor for Consumer and Commercial
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NXP Semiconductors | HF-MOSFETs | CW | 18.6 | 2450 | 2450 | Tape and Reel | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG4005ESFYL
Diode Schottky 0.5A 2-Pin DSN T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 40 | 0.5 | 3.5 | 0.88 | 1.2(Typ) | 1200 | 1.28(Typ) | 2 | DSN | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG6020ETP,115
Diode Schottky 2.8A 2-Pin CFP5 T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 2.8 | 50 | 0.53@2A | 150 | 2500 | 8.6(Typ) | Tape and Reel | 2 | CFP5 | SOD | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU530WF
Trans RF BJT NPN 16V 0.065A 450mW Automotive AEC-Q101 3-Pin SC-70 T/R
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Von 0,075 € bis 0,0814 €
pro Stück
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NXP Semiconductors | HF-BJT | NPN | Si | Single | 16 | 30 | 1 | 3 | 0.065 | 8V/15mA | 450 | 50 to 120 | 60@10mA@8V | 0.68 | 24 | 10.5(Typ) | 20 | 11000(Typ) | 1.1(Min) | Tape and Reel | 3 | SC-70 | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU550XRVL
Trans RF BJT NPN 16V 0.08A 450mW 4-Pin(3+Tab) SOT-143R T/R Automotive AEC-Q101
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.08 | 8V/25mA | 450 | 50 to 120 | 60@15mA@8V | 0.41 | 26.5(Max) | 13.5(Typ) | 23 | 11000(Typ) | 1.25(Min) | Tape and Reel | 4 | SOT-143R | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYC8-600,127
Diode Switching 600V 8A 2-Pin(2+Tab) TO-220AC Rail
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 600 | 8 | 88 | 2.9 | 150 | 52 | Rail | 2 | TO-220AC | TO | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU550VL
Trans RF BJT NPN 16V 0.08A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.08 | 8V/25mA | 450 | 50 to 120 | 60@15mA@8V | 0.72 | 26.5 | 13.5(Typ) | 23 | 11000(Typ) | 1.3(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFV10700GSR5
Trans RF MOSFET N-CH 105V 5-Pin CFM T/R
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Von 619,2194 € bis 667,898 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | Pulse | 105 | 10 | 526000 | 19.2 | 960 | 700(Typ) | 1215 | Tape and Reel | 5 | CFM | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT23H200-4S2LR6 Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R |
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 15.3 | 2300 | 45(Typ) | 2400 | Tape and Reel | 7 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT26P100-4WSR3
Trans RF MOSFET N-CH 65V 5-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 15.1 | 2496 | 22 | 2690 | Tape and Reel | 5 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT26HW050GSR3
Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 14.2 | 2620 | 9(Typ) | 2690 | Tape and Reel | 9 | NI-780-4S4 | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A2T21H360-23NR6
RF POWER LDMOS TRANSISTOR
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NXP Semiconductors | HF-MOSFETs | 16.8 | 2110 | 2200 | Tape and Reel | 7 | FMF | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP65-02,135
PIN Diode Attenuator/Switch 30V 100mA Automotive AEC-Q101 2-Pin SOD-523 T/R
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0,0749 €
pro Stück
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NXP Semiconductors | PIN | Attenuator|Switch | Single | 30 | 100 | 0.9@10mA | 1.1@50mA | 0.95@5mA | 0.02@20V | 715 | 0.8@3V | 0.17 | 2 | SOD-523 | SOD | No | Unknown | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT21S230SR3
Trans RF MOSFET N-CH 65V 7-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 16.7 | 2110 | 50(Typ) | 2170 | Tape and Reel | 7 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A2T27S020NR1
POWER LDMOS TRANSISTOR 400-2700 MHz, 2.5 W AVG., 28 V
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NXP Semiconductors | HF-MOSFETs | 400 | 2.5 | 2700 | Tape and Reel | 3 | TO-270 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9202NR3
Trans RF FET N-CH 70V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 19 | 920 | 58(Typ) | 960 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2G26H281-04SR3 RF Power GaN Transistor |
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NXP Semiconductors | HF-MOSFETs | 2496 | Tape and Reel | 5 | NI-780S | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1004GNR3
RF POWER LDMOS TRANSISTORS
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NXP Semiconductors | HF-MOSFETs | 2450 | 2450 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1008HR5
Trans RF MOSFET N-CH 100V 3-Pin NI-780 T/R
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Von 1.001,7385 € bis 1.074,5133 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | Pulse | 100 | 10 | 2.4 | 695@50V | 20.3 | 900 | 275(Typ) | 1215 | Tape and Reel | 3 | NI-780 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1006HR5
Trans RF MOSFET N-CH 120V 5-Pin NI-1230 T/R
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Von 593,8819 € bis 640,5727 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 120 | 10 | 3 | 1333000 | 506@50V | 20 | 10 | 1000(Typ) | 500 | Tape and Reel | 5 | NI-1230 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1014NT1
Trans RF MOSFET N-CH 68V 4-Pin PLD-1.5 T/R
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9,609 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 2-Tone | 68 | 12 | 2.7 | 30@28V | 19 | 1 | 4(Typ) | 2000 | 4 | PLD-1.5 | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6VP11KHR5
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 110 | 10 | 506@50V | 26 | 1.8 | 1000(Typ) | 150 | Tape and Reel | 5 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V14300HSR5
Trans RF MOSFET N-CH 50V 3-Pin NI-780S T/R
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442,8378 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | 50 | 18 | 1200 | 330(Typ) | 1400 | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC869,115
Trans GP BJT PNP 20V 2A 1350mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
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NXP Semiconductors | GP BJT | PNP | Bipolar Power | Single Dual Collector | 20 | 32 | 1 | 5 | 2 | 250 | 1350 | 30 to 50|50 to 120 | 50@5mA@10V|85@500mA@1V|60@1A@1V|40@2A@1V | 28 | 0.5@100mA@1A|0.6@200mA@2A | Tape and Reel | 4 | SOT-89 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No |